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| Datasheet File OCR Text: |
| Central PROCESS DETAILS Process Die Size Die Thickness MT1 Bonding Pad Area TM PROCESS CPQ130 Triac Semiconductor Corp. 12 Amp, 600 Volt Triac Chip GLASS PASSIVATED MESA 130 MILS x 130 MILS 8.6 MILS 0.6 MILS 99 MILS x 49 MILS 34 MILS x 34 MILS Al - 45,000A Al/Mo/Ni/Ag - 32,000A Gate Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 624 PRINCIPAL DEVICE TYPES CQ220-12B Series CQDD-12M Series BACKSIDE MT2 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (05-MAY 2005) |
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