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  Datasheet File OCR Text:
 PROCESS
Triac
CPQ150
16 Amp, 600 Volt Triac Chip
PROCESS DETAILS Process Die Size Die Thickness MT1 Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 150 MILS x 150 MILS 8.6 MILS 0.6 MILS 68.9 MILS x 118 MILS 39.4 MILS x 39.4 MILS Al - 45,000A Al/Mo/Ni/Ag - 32,000A
GEOMETRY GROSS DIE PER 4 INCH WAFER 466 PRINCIPAL DEVICE TYPES CQ220-16B Series CQDD-16M Series
BACKSIDE MT2
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R1 (19 -May 2005)
PROCESS
CPQ150
Typical Electrical Characteristics
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R1 (19 -May 2005)


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