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| Previous Datasheet Index Next Data Sheet PD - 5.022B CPV364MF IGBT SIP MODULE Features * * * * Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve Q1 D1 9 4 6 Q2 D2 12 Q4 D4 18 Q3 1 Fast IGBT D3 15 3 Q5 D5 16 D6 10 Q6 Product Summary 7 13 19 Output Current in a Typical 5.0 kHz Motor Drive 12 ARMS per phase (3.8 kW total) with TC = 90C, TJ = 125C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 80% (See Figure 1) Description The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. IMS-2 Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE VISOL PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Isolation Voltage, any terminal to case, 1 minute Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 600 27 15 80 80 9.3 80 20 2500 63 25 -40 to +150 300 (0.063 in. (1.6mm) from case) 5-7 lbf*in (0.55-0.8 N*m) Units V A V VRMS W C Thermal Resistance Parameter RJC (IGBT) RJC (DIODE) RCS (MODULE) Wt Junction-to-Case, each IGBT, one IGBT in conduction Junction-to-Case, each diode, one diode in conduction Case-to-Sink, flat, greased surface Weight of module Typ. -- -- 0.1 20 (0.7) Max. 2.0 3.0 -- -- Units C/W g (oz) Revision 1 C-157 To Order Previous Datasheet Index Next Data Sheet CPV364MF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)CES/TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES VFM IGES Gate Threshold Voltage Temp. Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current Min. Typ. Max. Units 600 -- -- V -- 0.69 -- V/C -- 1.4 1.6 -- 1.8 -- V -- 1.5 -- 3.0 -- 5.5 -- -12 -- mV/C 9.2 12 -- S -- -- 250 A -- -- 3500 -- 1.3 1.7 V -- 1.2 1.6 -- -- 500 nA Conditions VGE = 0V, IC = 250A VGE = 0V, IC = 1.0mA IC = 15A VGE = 15V IC = 27A See Fig. 2, 5 IC = 15A, TJ = 150C VCE = VGE, IC = 250A VCE = VGE, IC = 250A VCE = 100V, IC = 27A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150C IC = 15A See Fig. 13 IC = 15A, TJ = 150C VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 59 8.6 25 26 37 240 230 0.53 1.3 1.8 28 37 380 460 3.4 1500 190 20 42 74 4.0 6.5 80 220 188 160 Max. Units Conditions 80 IC = 27A 10 nC VCC = 400V 42 See Fig. 8 -- TJ = 25C -- ns IC = 27A, VCC = 480V 410 VGE = 15V, RG = 10 420 Energy losses include "tail" and -- diode reverse recovery -- mJ See Fig. 9, 10, 11, 18 2.8 -- TJ = 150C, See Fig. 9, 10, 11, 18 -- ns IC = 27A, VCC = 480V -- VGE = 15V, RG = 10 -- Energy losses include "tail" and -- mJ diode reverse recovery -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz 60 ns TJ = 25C See Fig. 120 TJ = 125C 14 IF = 15A 6.0 A TJ = 25C See Fig. 10 TJ = 125C 15 V R = 200V 180 nC TJ = 25C See Fig. 600 TJ = 125C 16 di/dt = 200A/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17 Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) VCC=80%(VCES), VGE=20V, L=10H, RG= 10, ( See fig. 19 ) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. C-158 To Order Previous Datasheet Index Next Data Sheet CPV364MF 20 6.2 12 3.7 Total O utpu t P ow e r (kW ) 20 16 5.0 Lo ad C urrent (A ) S 8 2.5 4 TC = 90C TJ = 125C Power Factor = 0.8 Modulation Depth = 0.8 VC C = 60% of Rated Voltage 0.1 1 10 100 1.2 0 0 f, F re quenc y (kH z) Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave 1000 1000 I C , Collector-to-E m itter C urrent (A) IC , C olle ctor-to -E m itte r C u rren t (A ) 100 TJ = 25 C 100 T J = 1 50 C 10 TJ = 15 0 C T J = 25 C 1 10 0.1 1 0.1 1 V G E = 1 5V 2 0 s P U LS E W IDTH 10 0.01 5 10 V C C = 1 00 V 5 s P U LS E W IDTH 15 V C E , C ollector-to-E m itter V oltage (V ) V G E , G ate -to-E m itter V olta ge (V ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-159 To Order Previous Datasheet Index Next Data Sheet CPV364MF 50 V G E = 15 V 3.0 VG E = 1 5 V 80 s P UL S E W ID TH I C = 54 A 40 V C E , C ollector-to-E m itter V oltage (V) M axim um DC Collector C urrent (A ) 2.5 30 2.0 I C = 27 A 20 1.5 10 I C = 1 4A 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 1 00 120 140 160 T C , C ase Tem perature (C ) TC , C ase Tem perature (C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 10 T h e rm a l R e sp o n s e (Z thJC ) 1 D = 0 .5 0 0 .2 0 0 .1 0 0 .0 5 PD M 0.1 0 .0 2 0 .0 1 S IN G L E P U L S E (T H E R M A L R E S P O N S E ) N o te s: 1 . D u ty fa c to r D = t t 1 t 2 1 /t 2 0.01 0.00001 2 . P e a k TJ = P D M x Z thJ C + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c ) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case C-160 To Order Previous Datasheet Index Next Data Sheet CPV364MF 3000 2500 2000 Cies 1500 Coes V G E , G ate-to-E m itter V oltag e (V ) V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 20 V C E = 40 0V I C = 2 7A 16 C , C apacitance (pF) 12 8 1000 500 Cres 4 0 1 10 1 00 0 0 10 20 30 40 50 60 V C E , C ollector-to-E m itter V oltage (V) Q g , T o tal G a te C h a rg e (n C ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 4 .8 Total S w itching Losses (m J) 4 .7 To ta l S w itc hing Lo ss es (m J) VC C VG E TC IC = 4 80 V = 15 V = 25C = 2 7A 100 R G = 10 V GE = 1 5V V CC = 48 0V 4 .6 I C = 5 4A 10 4 .5 I C = 2 7A I C = 14 A 4 .4 4 .3 0 10 20 30 40 50 60 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 R G , G ate R es istance ( ) W TC , C ase Tem perature (C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-161 To Order Previous Datasheet Index Next Data Sheet CPV364MF 20 16 I C , C o lle c to r-to -E m itte r C u rre n t (A ) Total S w itching Losses (m J) RG TC V CC VGE = 10 = 150 C = 4 80 V = 15 V 1000 VG E E 20 V G= T J = 12 5C 100 12 S A FE O P E RA TIN G A RE A 8 10 4 0 0 20 40 60 1 1 10 100 1000 I C , C o llector-to -E m itte r Current (A ) V C E , C o lle cto r-to -E m itte r V o lta g e (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA Instantaneous Forward Current - I F (A) 10 TJ = 150C TJ = 125C TJ = 25C 1 0.8 1.2 1.6 2.0 2.4 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current C-162 To Order Previous Datasheet Index Next Data Sheet CPV364MF 100 100 VR = 200V TJ = 125C TJ = 25C 80 VR = 200V TJ = 125C TJ = 25C I F = 30A I F = 30A 60 I IRRM - (A) t rr - (ns) 10 IF = 15A I F = 15A 40 I F = 5.0A I F = 5.0A 20 100 di f /dt - (A/s) 1000 1 100 di f /dt - (A/s) 1000 Fig. 14 - Typical Reverse Recovery vs. di/dt f 800 Fig. 15 - Typical Recovery Current vs. di/dt f 1000 VR = 200V TJ = 125C TJ = 25C 600 VR = 200V TJ = 125C TJ = 25C IF = 30A di(rec)M/dt - (A/s) Q RR - (nC) 400 I F = 5.0A I F = 15A I F = 30A I F = 15A IF = 5.0A 200 0 100 di f /dt - (A/s) 1000 100 100 di f /dt - (A/s) 1000 Fig. 16 - Typical Stored Charge vs. di/dt f C-163 Fig. 17 - Typical di(rec)M/dt vs. dif/dt To Order Previous Datasheet Index Next Data Sheet CPV364MF 90% Vge +Vge Same type device as D.U.T. Ic 10% Vce Vce 90% Ic Ic 5% Ic 80% of Vce 430F D.U.T. td(off) tf Eoff = t1+5S Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 10% Irr Vcc Vpk Irr trr Ic Qrr = trr id dt tx t4 Erec = Vd id dt t3 t1 t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr Refer to Section D for the following: Appendix D: Section D - page D-6 Fig. 18e - Macro Waveforms for Test Circuit Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 5 - IMS-2 Package (13 pins) Section D - page D-14 C-164 To Order |
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