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| SHINDENGEN Schottky Rectifiers (SBD) SBD Bridges D10SBS4 40V 10A FEATURES *oe Single In-Line Package Thin *oe SBD Bridge *oe Low VF APPLICATION OUTLINE DIMENSIONS Case : 3S (Unit : mm) *oe power supply Switching *oe Home Appliances, Office Equipment *oe Telecommunication, Factory Automation RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55*150 *Z Operating Junction TemperatureTj 150 *Z VRM Maximum Reverse Voltage 40 V VRRSM Repetitive Peak Surge Reverse Voltage ulse width 0.5ms, duty 1/40 P 45 V IO Average Rectified Forward Current 50Hz sine wave, R-load With heatsink Tc=67*Z10 A 50Hz sine wave, R-load Without heatsink Ta=25*Z 3.4 Peak Surge Forward Current IFSM50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25 *Z 100 A PRRSM Repetitive Peak Surge Reverse Power Pulse width 10Es, Rating of per diode, Tj=25*Z 330 W Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV Mounting Torque TOR * ecommended torque*0.5Nm*j R i F 0.8 Nm *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit VF IF Forward Voltage =5A, Pulse measurement, Rating of per diode Max.0.55 V IR V =V , Pulse measurement, Rating of per diodeMax.3.5 mA Reverse Current R RM Junction Capacitance Cj f=1MHz, VR=10V, Rating of per diode TYP 180 pF AEjc junction to case *@*@With heatsink Max.5.5 Thermal Resistance AEjl junction to lead *@* Without heatsink @ Max.6 *Z/W AEjajunction to ambient Without heatsink Max.30 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd D10SBS4 Forward Voltage 10 Forward Current IF [A] Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] D10SBS4 Junction Capacitance f=1MHz Tc=25C TYP per diode 1000 Junction Capacitance Cj [pF] 100 0.1 1 10 Reverse Voltage VR [V] D10SBS4 1000 Reverse Current Tc=150C [MAX] 100 Tc=150C [TYP] Reverse Current IR [mA] Tc=125C [TYP] 10 Tc=100C [TYP] 1 Tc=75C [TYP] 0.1 Pulse measurement per diode 0.01 0 5 10 15 20 25 30 35 40 Reverse Voltage VR [V] D10SBS4 20 Reverse Power Dissipation Reverse Power Dissipation PR [W] 15 DC D=0.05 0.1 0.2 0.3 10 0.5 5 SIN 0.8 0 0 10 20 30 40 50 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T D10SBS4 20 Forward Power Dissipation D=0.8 DC Forward Power Dissipation PF [W] 15 0.3 0.2 0.05 10 0.1 SIN 0.5 5 0 0 2 4 6 8 10 12 14 16 Average Rectified Forward Current IO [A] Tj = 150C IO 0 tp D=tp /T T D10SBS4 20 Derating Curve Average Rectified Forward Current IO [A] DC 15 D=0.8 10 0.5 SIN 0.3 0.2 5 0.1 0.05 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = 20V 0 0 IO VR tp D=tp /T T D10SBS4 6 Derating Curve Average Rectified Forward Current IO [A] DC 5 D=0.8 4 SIN 3 0.3 2 0.2 0.1 0.5 1 0.05 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = 20V 0 0 IO VR tp D=tp /T T D10SBS4 150 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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