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| TetraFET D2290UK METAL GATE RF SILICON FET MECHANICAL DATA Top View E 4 3 D C K L 1 F B 2 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W - 12.5V - 1GHz SINGLE ENDED FEATURES * SIMPLIFIED AMPLIFIER DESIGN * SUITABLE FOR BROAD BAND APPLICATIONS A J G H I SOT143 PACKAGE PIN 1 - DRAIN PIN 2 - SOURCE PIN 3 - GATE PIN 4 - SOURCE * VERY LOW Crss * SIMPLE BIAS CIRCUITS * LOW NOISE 'LP $ % & ' ( ) * + , . / PLQ PD[ %6& %6& 5() PP PLQ PD[ %6& %6& 5() ,QFKHV * HIGH GAIN - 10 dB MINIMUM APPLICATIONS * HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 1W 40V 20V 2A -65 to 125C 150C Document Number 3890 Issue 3 D2290UK ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS gfs GPS Ciss Coss Crss Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 12.5V VGS = 20V ID = 10mA VDS = 10V PO = 1W VDS = 12.5V f = 1GHz VDS = 0V VGS = -5V f = 1MHz f = 1MHz f = 1MHz VDS = 12.5V VGS = 0 VDS = 12.5V VGS = 0 IDQ = 50mA ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.2A 0.5 0.18 10 40 20:1 40 Typ. Max. Unit V 1 1 7 mA A V S dB % -- 12 10 1 pF pF pF VGS(th) Gate Threshold Voltage* VSWR Load Mismatch Tolerance * Pulse Test: Pulse Duration = 300 s , Duty Cycle 2% THERMAL DATA RTHj-case Thermal Resistance Junction - Case Max. 175 C / W Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Document Number 3890 Issue 3 |
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