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| SHINDENGEN Schottky Rectifiers (SBD) Single D2FS6 60V 1.5A FEATURES *oe Small SMT *oe Tj150*Z *oe PRRSM avalanche guaranteed APPLICATION *oe Switching power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication OUTLINE DIMENSIONS Case : 2F Unit : mm RATINGS *oeAbsolute Maximum Ratings (If not specified Tl=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40*150 *Z Operating Junction Temperature j T 150 *Z VRM Maximum Reverse Voltage 60 V Repetitive Peak Surge ReverseVRRSM Voltage Pulse width 0.5ms, duty 1/40 65 V IO Average Rectified Forward Current 50Hz sine wave, R-load Ta=31*Z* On alumina 1.5 @ substrateA 50Hz sine wave, R-load Ta=26*Z* On glass-epoxy substrate @ 1.1 Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25*Z 60 A Repetitive Peak Surge Reverse PRRSM Power Pulse width 10Es, Tj=25*Z 330 W *oeElectrical Characteristics (If not specified Tl=25*Z) Item Symbol Conditions Ratings Unit Pulse measurement Forward Voltage VF I =1.5A, F Max.0.58 V Reverse Current IR V =V , R RM Pulse measurement Max.2 mA Junction Capacitance Cj f=1MHz,R V =10V Typ.120 pF AEjl junction to lead Max.24 Thermal Resistance AEja junction to ambient* On alumina substrate @ Max.90 *Z/W junction to ambient* On glass-epoxy substrate Max.126 @ Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd D2FS6 Forward Voltage 10 Forward Current IF [A] 1 Tl=150C [MAX] Tl=150C [TYP] Tl=25C [MAX] Tl=25C [TYP] Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] D2FS6 Junction Capacitance f=1MHz Tl=25C TYP per diode 1000 Junction Capacitance Cj [pF] 100 10 0.1 1 10 Reverse Voltage VR [V] D2FS6 1000 Reverse Current 100 Tl=150C [MAX] Tl=150C [TYP] Reverse Current IR [mA] 10 Tl=125C [TYP] Tl=100C [TYP] 1 Tl=75C [TYP] 0.1 Pulse measurement per diode 0.01 0 10 20 30 40 50 60 Reverse Voltage VR [V] D2FS6 6 Reverse Power Dissipation DC D=0.05 0.1 0.2 Reverse Power Dissipation PR [W] 5 4 0.3 3 0.5 2 SIN 1 0.8 0 0 10 20 30 40 50 60 70 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T D2FS6 1.2 Forward Power Dissipation Forward Power Dissipation PF [W] 1 DC 0.8 SIN 0.6 0.1 0.4 0.05 0.3 0.2 0.5 D=0.8 0.2 0 0 0.5 1 1.5 2 Average Rectified Forward Current IO [A] Tj = 150C IO 0 tp D=tp /T T D2FS6 3 Derating Curve Average Rectified Forward Current IO [A] 2.5 DC D=0.8 Alumina substrate Soldering land 2mm Conductor layer 20m Substrate thickness 0.64mm 2 0.5 1.5 0.3 1 0.2 0.1 0.5 0.05 0 0 20 40 60 80 100 120 140 160 SIN Ambient Temperature Ta [C] VR = 30V 0 0 IO VR tp D=tp /T T D2FS6 2 Derating Curve Average Rectified Forward Current IO [A] DC D=0.8 1.5 Glass-epoxy substrate Soldering land 2mm Conductor layer 35m SIN 1 0.5 0.3 0.5 0.2 0.1 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = 30V IO 0 0 VR tp D=tp /T T D2FS6 100 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle 80 Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 60 40 20 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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