 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DCX4710H 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS General Description * DCX4710H is best suited for applications where the load needs to be turned on and off using micro-controllers, comparators or other control circuits, particularly at a point of load. It features a discrete pre-biased PNP transistor which can support continuous maximum current of 100 mA. It also contains a pre-biased NPN transistor which can be used as a control and can be biased using a higher supply. The component devices can be used as a part of circuit or as stand alone discrete devices. 4 5 6 3 2 1 Features * * * * * Built in Biasing Resistors Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) SOT-563 Mechanical Data * * * * * * * * Case: SOT-563 Case Material: Molded Plastic. "Green Molding" Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Fig. 2 Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Page 7 Ordering Information: See Page 7 Weight: 0.005 grams (approximate) Reference Q1 Q2 Device Type PNP NPN R1 (NOM) 10K R2 (NOM) 47K Schematic and Pin Configuration R3 (NOM) 10K R4 (NOM) 10K Maximum Ratings: Total Device Characteristic Output Current Power Dissipation (Note 3) Power Derating Factor above 45C Junction Operation and Storage Temperature Range @TA = 25C unless otherwise specified Symbol Iout Pd Pder Pd RJA Value 100 150 1.43 -55 to +150 833 Unit mA mW mW/C C C/W Thermal Resistance, Junction to Ambient Air (Note 3) (Equivalent to one heated junction of PNP transistor) @ TA = 25C Notes: 1. No purposefully added lead. 2 . Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; as per Diodes Inc. suggested pad layout document AP02001 on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30871 Rev. 6 - 2 1 of 7 www.diodes.com DCX4710H (c) Diodes Incorporated Sub-Component Device - Pre-Biased PNP Transistor (Q1) Characteristic Collector-Base Voltage Collector-Emitter Voltage Supply Voltage Input Voltage Output Current (dc) Symbol VCBO VCEO VCC VIN IC(max) @TA = 25C unless otherwise specified Value -50 -50 -50 +6 to -40 -100 Unit V V V V mA Sub-Component Device - Pre-Biased NPN Transistor (Q2) Characteristic Collector-Base Voltage Collector-Emitter Voltage Supply Voltage Input Voltage Output Current (dc) Symbol VCBO VCEO VCC VIN IC(max) @TA = 25C unless otherwise specified Value 50 50 50 -10 to +40 100 Unit V V V V mA Electrical Characteristics: Pre-Biased PNP Transistor (Q1) Characteristic OFF CHARACTERISTICS Collector-Base Cut Off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Input Off Voltage Output Off Current ON CHARACTERISTICS DC Current Gain Collector-Emitter Saturation Voltage Output On Voltage Input On Voltage (Load is present) Input Current Input Resistor +/- 30% (Base) Pull-up Resistor (Base to Vcc supply) Resistor Ratio SMALL SIGNAL CHARACTERISTICS Transition Frequency (gain bandwidth product) *Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02 @TA = 25C unless otherwise specified Unit nA V V V A V V V mA K K % MHz Test Condition VCB = -50V, IE = 0 IC = -10A, IE = 0 IC = -4mA, IB = 0 B Symbol ICBO V(BR)CBO V(BR)CEO VI(OFF) IO(OFF) hFE VCE(sat) VO(ON) VI(ON) II R1 R2 (R2/R1) fT Min -50 -50 80 -1.4 7 32 20 Typ Max -100 -0.3 -0.5 -0.25 -0.3 -0.88 13 62 20 -0.1 -0.9 10 47 250 VCE = -5V, IC = -100A VCC = -50V, VI = 0V VCE = -5V, IC = -5mA IC = -10mA, IB = -0.3mA B IO/II = -10mA/-0.5mA VO = -0.3V, IC = -2mA VI = -5V VCE = -10V, IE = -5mA, f = 100MHz DS30871 Rev. 6 - 2 2 of 7 www.diodes.com DCX4710H (c) Diodes Incorporated Pre-Biased NPN Transistor (Q2) Characteristic OFF CHARACTERISTICS Collector-Base Cut Off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Input Off Voltage Output Current ON CHARACTERISTICS DC Current Gain Collector-Emitter Saturation Voltage Output On Voltage Input On Voltage Input Current Input Resistor +/- 30% (Base) Resistor Ratio SMALL SIGNAL CHARACTERISTICS Transition Frequency (Gain bandwidth product) *Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02 @TA = 25C unless otherwise specified Symbol ICBO V(BR)CBO V(BR)CEO VI(OFF) IO(OFF) hFE VCE(sat) VO(ON) VI(ON) II R1 (R2/R1) fT Min 50 50 35 3 7 0.8 Typ 1.2 0.1 1.6 10 1 250 Max 100 0.5 0.5 0.25 0.3 0.88 13 1.2 Unit nA V V V A V V V mA K MHz Test Condition VCB = 50V, IE = 0 IC = 10A, IE = 0 IC = 2mA, IB = 0 B VCE = 5V, IC = 100A VCC = 50V, VI = 0V VCE = 5V, IC = 5mA IC = -10mA, IB = -0.3mA B IO/II = 10mA/0.5mA VO = 0.3V, IC = 2mA VI = 5V VCE = 10V, IE = 5mA, f = 100MHz Typical Characteristics @Tamb = 25C unless otherwise specified PD, POWER DISSIPATION (mW) 0 0 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Derating Curve (Note 3) Notes: 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; as per Diodes Inc. suggested pad layout document AP02001 on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30871 Rev. 6 - 2 3 of 7 www.diodes.com DCX4710H (c) Diodes Incorporated Characteristics Curves of PNP Transistor (Q1) 0.1 lb = 1.75mA lb = 2.25mA @Tamb = 25C unless otherwise specified 400 VCE = 5V 0.09 IC, COLLECTOR CURRENT (A) 0.08 0.07 0.06 lb = 1.25mA lb = 1.5mA 350 hFE, DC CURRENT GAIN 300 250 200 TA = 150C TA = 125C TA = 85C lb = 2mA lb = 0.5mA 0.05 0.04 0.03 lb = 0.75mA lb = 0.25mA TA = 25C 150 TA = -55 C 0.02 0.01 0 0 0.2 0.4 0.6 0.8 100 50 0 lb = 1mA 1 1.2 1.4 1.6 1.8 2 0.1 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 2 VCE vs. IC 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3 DC Current Gain vs. IC 1000 VCE(SAT), COLLECTOR VOLTAGE (V) VCE(SAT), COLLECTOR VOLTAGE (V) T A = 150C TA = 125C TA = 150C TA = 125C TA = -55 C TA = 25C TA = 85C T A = -55 C TA = 25C T A = 85C 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4 IC vs. VCE(SAT) 1000 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 IC vs. VCE(SAT) 1000 DS30871 Rev. 6 - 2 4 of 7 www.diodes.com DCX4710H (c) Diodes Incorporated T A = 125 C TA = 85 C TA = 25 C TA = -55 C TA = 150 C IC, OUTPUT CURRENT (mA) Fig. 6 Input Voltage vs. Collector Current Characteristics Curves of NPN Transistor (Q2) @Tamb = 25C unless otherwise specified 0.1 VCE = 5V lb = 1.5mA lb = 1.25mA lb = 1.75mA lb = 2mA 0.09 IC, COLLECTOR CURRENT (A) hFE, DC CURRENT GAIN TA = 150 C TA = 125 C 0.08 0.07 0.06 0.05 0.04 lb = 0.25mA lb = 0.5mA TA = 85 C T A = 25 C TA = -55 C 0.03 0.02 0.01 lb = 1mA lb = 0.75mA 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 DC Current Gain vs. IC 1000 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 8 VCE vs. IC DS30871 Rev. 6 - 2 5 of 7 www.diodes.com DCX4710H (c) Diodes Incorporated VCE(SAT), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(SAT), COLLECTOR EMITTER SATURATION VOLTAGE (V) TA = 150 C TA = 125 C T A = 150 C T A = 125 C TA = -55 C T A = -55 C TA = 25 C TA = 85 C TA = 25 C T A = 85 C 0.1 1 10 100 1000 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 9 IC vs. VCE(SAT) IC, COLLECTOR CURRENT (mA) Fig. 10 IC vs. VCE(SAT) VCE = 0.3V VI(ON), INPUT VOLTAGE (V) TA = 125 C T A = 25 C T A = -55 C TA = 85 C TA = 150 C 0.1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 11 Input Voltage vs. Output Current 100 DS30871 Rev. 6 - 2 6 of 7 www.diodes.com DCX4710H (c) Diodes Incorporated Ordering Information Device DCX4710H-7 Notes: (Note 5) Marking Code C02 Packaging SOT-563 Shipping 3000/Tape & Reel 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information C02YM C02 = Product Type Marking Code YM = Date Code Marking Y = Year e.g., T = 2006 M = Month e.g., 9 = September Fig. 12 Date Code Key Year Code Month Code Jan 1 Feb 2 2006 T Mar 3 2007 U Apr 4 May 5 2008 V Jun 6 Jul 7 2009 W Aug 8 2010 X Sep 9 Oct O 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30871 Rev. 6 - 2 7 of 7 www.diodes.com DCX4710H (c) Diodes Incorporated |
Price & Availability of DCX4710H1
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |