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DG441B/442B
New Product
Vishay Siliconix
Improved Quad SPST CMOS Analog Switches
FEATURES
D D D D D D Low On-Resistance: 45 W Low Power Consumption: 1.0 mW Fast Switching Action--tON: 120 ns Low Charge Injection--Q: -1 pC TTL/CMOS-Compatible Logic Single Supply Capability
BENEFITS
D D D D D Less Signal Errors and Distortion Reduced Power Supply Requirements Faster Throughput Reduced Pedestal Errors Simple Interfacing
APPLICATIONS
D D D D D D Audio Switching Data Acquisition Sample-and-Hold Circuits Communication Systems Automatic Test Equipment Medical Instruments
DESCRIPTION
The DG441B/442B are monolithic quad analog switches designed to provide high speed, low error switching of analog and audio signals. The DG441B/442B are upgrades to the original DG441/442. Combing low on-resistance (45 W, typ.) with high speed (tON 120 ns, typ.), the DG441B/442B are ideally suited for Data Acquisition, Communication Systems, Automatic Test Equipment, or Medical Instrumentation. Charge injection has been minimized on the drain for use in sample-and-hold circuits. The DG441B/442B are built using Vishay Siliconix's high-voltage silicon-gate process. An epitaxial layer prevents latchup. When on, each switch conducts equally well in both directions and blocks input voltages to the supply levels when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG441B
Dual-In-Line and SOIC IN1 D1 S1 V- GND S4 D4 IN4 1 2 3 4 5 6 7 8 Top View 16 15 14 13 12 11 10 9 IN2 D2 S2 V+ NC S3 D3 IN3
TRUTH TABLE
Logic
0 1
DG441B
ON OFF Logic "0" v 0.8 V Logic "1" w 2.4 V
DG442B
OFF ON
DG441B QFN16 (4x4 mm)
D1 IN1 IN2 D2 16 15 14 13
ORDERING INFORMATION
Temp Range Package
16-Pin 16 Pin Plastic DIP -40 to 85_C 40 16-Pin 16 Pin Narrow SOIC 16-Pin 16 Pin QFN 4x4 mm
Part Number
DG441BDJ DG442BDJ DG441BDY DG442BDY DG441BDN DG442BDN
S1 V- GND S4
1 2 3 4
12 11 10 9
S2 V+ NC S3
5
6
7
8
D4 IN4 IN3 D3 Top View Document Number: 72625 S-32553--Rev. A, 15-Dec-03 www.vishay.com
1
DG441B/442B
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . . (V-) -2 V to (V+) +2 V or 30 mA, whichever occurs first Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 125_C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW 16-Pin Narrow Body SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW QFN-16d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/_C above 75_C d. Derate 12 mW/_C above 25_C
New Product
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
SPECIFICATIONSa FOR DUAL SUPPLIES
Test Conditions Unless Otherwise Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance On-Resistance Match Between Channelse Switch Off Leakage Current Channel On Leakage Current VANALOG rDS(on) DrDS(on) IS(off) ID(off) ID(on) VD = "14 V VS = #14 V V, IS = 1 mA, VD = #10 V IS = 1 mA, VD = "10 V Full Room Full Room Full Room Full Room Full Room Full -0.5 -5 -0.5 -5 -0.5 -10 -15 45 2 "0.01 "0.01 #0.02 15 80 95 4 5 0.5 5 0.5 5 0.5 10 nA V
Limits
-40 to 85_C
Symbol
V+ = 15 V, V- = -15 V, VL = 5 V. VIN = 2.4 V, 0.8 Vf
Tempb
Mind
Typc
Maxd
Unit
W
VS = VD = "14 V
Digital Control
Input Voltage Low Input Voltage High Input Current VIN Low Input Current VIN High VINL VINH IINL IINH VIN under test = 0.8 V, All Other = 2.4 V VIN under test = 2.4 V, All Other = 0.8 V Full Full Full Full 2.4 -1 -1 -0.01 0.01 1 1 0.8 V mA
Dynamic Characteristics
Turn-On Time Turn-Off Time Charge Injectione Off Isolatione Crosstalke (Channel-to-Channel) Source Off Capacitancee Drain Off Capacitancee Channel On Capacitancee tON tOFF Q OIRR XTALK CS(off) CD(off) CD(on) RL = 1 kW , CL = 35 pF VS = 10 V, See Figure 2 CL = 1 nF, VS = 0 V, Vgen = 0 V, Rgen = 0 W RL = 50 W , CL = 15 pF, VS = 1 VRMS f = 100 kHz f = 1 MHz VS = VD = 0 V, f = 1 MHz Room Room Room Room Room Room Room Room 120 65 -1 90 95 4 4 16 p pF 220 120 ns pC dB
Power Supplies
Positive Supply Current Negative Supply Current I+ I- V+ = 16.5 V, V- = -16.5 V VIN = 0 or 5 V Room Full Room Full -1 -5 1 5 mA
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Document Number: 72625 S-32553--Rev. A, 15-Dec-03
DG441B/442B
New Product
SPECIFICATIONSa FOR SINGLE SUPPLY
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) IS = 1 mA, VD = 3 V, 8 V Full Room Full 0 90 12 160 200 V W
Vishay Siliconix
Limits
-40 to 85_C
Symbol
V+ = 12 V, V- = 0 V, VIN = 2.4 V, 0.8 Vf
Tempb
Mind
Typc
Maxd
Unit
Dynamic Characteristics
Turn-On Time Turn-Off Time Charge Injection tON tOFF Q RL = 1 kW , CL = 35 pF VS = 8 V, See Figure 2 CL = 1 nF Vgen = 6 V, Rgen = 0 W Room Room Room 120 60 4 300 200 ns pC
Power Supplies
Positive Supply Current Negative Supply Current I+ VIN = 0 or 5 V I- Room Full Room Full -1 -5 1 5
mA
Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function.
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
5 V Reg
INX
Level Shift/ Drive
V-
V+ GND
V-
FIGURE 1.
Document Number: 72625 S-32553--Rev. A, 15-Dec-03
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3
DG441B/442B
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. VD and Power Supply Voltages
110 100 90 80 r DS(on) ( W ) 70 60 50 40 30 20 10 -20 -16 -12 -8 -4 0 4 8 12 16 20 VD - Drain Voltage (V) "20 V "10 V "15 V "5 V r DS(on) ( W ) 100 90 80 70 60 50 40 30 20 10 0 -15 -10 -5 0 5 10 15 125_C 85_C 25_C -55_C V+ = 15 V V- = -15 V
rDS(on) vs. VD and Temperature
VD - Drain Voltage (V)
rDS(on) vs. VD and Single Power Supply Voltages
250 225 200 175 r DS(on) ( W ) 7V 10 V 12 V 15 V 0.5 V TH ( V ) 150 125 100 75 50 25 0 0 2 4 6 8 10 12 14 16 VD - Drain Voltage (V) 0 1.5 V+ = 5 V 2 2.5
Input Switching Threshold vs. Supply Voltage
1
4
6
8
10
12
14
16
18
20
V+ Positive Supply (V)
Leakage Currents vs. Analog Voltage
80 60 40 I S,I D - Current (pA) 20 0 -20 -40 -60 -80 -20 -15 -10 -5 0 5 Temperature (_C) 10 15 20 1 pA -55 IS(off), ID(off) I S, I D - Current 100 pA V+ = 22 V V- = -22 V TA = 25_C 1 nA
Leakage Currents vs. Temperature
V+ = 15 V V- = -15 V VS, VD = "14 V
IS(off), ID(off) 10 pA
ID(on)
-35
-15
5
25
45
65
85
105 125
Temperature (_C)
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Document Number: 72625 S-32553--Rev. A, 15-Dec-03
DG441B/442B
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Time vs. Single Supply Voltage
500 V- = 0 V 400 Switching Time (ns) Switching Time (ns) 300 400
Vishay Siliconix
Switching Time vs. Power Supply Voltage
300
200
200 ton 100 toff 0
ton 100 toff
2
4
6
8
10
12
14
16
18
20
0
0
"4
"8
"12
"16
"20
V+ - Positive Supply (V)
V+, V- Positive and Negative Supplies (V)
30 20 10
QS, QD - Charge Injection vs. Analog Voltage
Off Isolation vs. Frequency
120 110 100 V+ = 15 V V- = -15 V
Q - Charge (pC)
OIRR (dB)
90 80 70 60
0 -10 -20 -30 -15
V+ = 15 V V- = -15 V
RL = 50 W
V+ = 12 V V- = 0 V
50 40 -10 -5 0 5 10 15 10 k 100 k 1M 10 M VANALOG - Analog Voltage (V) f - Frequency (Hz)
Supply Current vs. Switching Frequency
4
I+ - Supply Current (mA)
3
2
1
0 1k 10 k 100 k 1M f - Frequency (Hz)
Document Number: 72625 S-32553--Rev. A, 15-Dec-03
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DG441B/442B
Vishay Siliconix
TEST CIRCUITS
+15 V V+ 10 V 3V S IN GND V- D RL 1 kW VO CL 35 pF Switch Input Logic Input 3V 50% 0V VS tOFF VO 80% 80% 50% tr <20 ns tf <20 ns
New Product
-15 V CL (includes fixture and stray capacitance) +15 V
Switch Output Note:
0V tON Logic input waveform is inverted for DG442.
FIGURE 2. Switching Time
DV
O
Rg
V+ S IN D CL 1 nF V- VO
VO INX OFF ON OFF
(DG441B)
OFF ON Q = DVO x CL OFF
3V GND
INX
(DG442B)
-15 V
FIGURE 3. Charge Injection
C = 1 mF tantalum in parallel with 0.01 mF ceramic C +15 V C
+15 V
VS Rg = 50 W 0V, 2.4 V NC 0V, 2.4 V
S1 IN1 S2 IN2 GND
V+
D1 50 W D2 VO RL V- C VS Rg = 50 W 0V, 2.4 V IN GND S
V+
D
VO RL
V-
C
-15 V VS VO
-15 V XTALK Isolation = 20 log C = RF bypass VS VO +15 V
Off Isolation = 20 log
FIGURE 4. Crosstalk
FIGURE 5. Off Isolation
C S Meter
V+ IN
0 V, 2.4 V
D GND V- C
HP4192A Impedance Analyzer or Equivalent
-15 V
FIGURE 6. Source/Drain Capacitances
www.vishay.com Document Number: 72625 S-32553--Rev. A, 15-Dec-03
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DG441B/442B
New Product
APPLICATIONS
+24 V
Vishay Siliconix
+15 V
RL
DG442B
+15 V IN
V+ 150 W
I = 3A VN0300L, M +15 V VIN 10 kW +15 V + - S
1/4 DG442B
D CH + - VOUT
GND
V- IN -15 V
0 = Load Off 1 = Load On
H = Sample L = Hold
FIGURE 7. Power MOSFET Driver
FIGURE 8. Open Loop Sample-and-Hold
VIN
+ - +15 V V+
VOUT Gain error is determined only by the resistor tolerance. Op amp offset and CMRR will limit accuracy of circuit.
GAIN1 AV = 1
R1 90 kW R2 5 kW With SW4 Closed VOUT VIN = R1 + R2 + R3 + R4 R4 = 100
GAIN2 AV = 10
GAIN3 AV = 20 GAIN4 AV = 100
R3 4 kW R4 1 kW
DG441 or DG442
V- GND
-15 V
FIGURE 9. Precision-Weighted Resistor Programmable-Gain Amplifier
Document Number: 72625 S-32553--Rev. A, 15-Dec-03
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