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| Infrared Emitting Diodes(GaAs) K DNH OESI EL-1CL3 DIMENSIONS (Unit : mm) FEATURES UCompact ((c)TM ) 3mm UWide beam angle U ow-cost L APPLICATIONS UFloppy disk drives UOptical switches UOptical readers MAXIMUM RATINGS Item Reverse voltage Forward current *1 Pulse forward current Power dissipation Operating temp. Storage temp. *2 Soldering temp. (Ta=2...) 5 Symbol VR F I F IP PD Topr. Tstg. Tsol. Rating 4 60 0.5 80 -20~+70 -20~+80 240 Unit V mA A mW ... ... ... *1. pulse width tw Z100 *I sec.period 10msec. T= *2. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Symbol VF R I Ct PO *Ip **I *E (Ta=2...) 5 Conditions F= I 40mA VR=4V f=1MHz F= I 40mA F= I 40mA F= I 40mA Min. Typ. 1.2 25 1.8 940 50 ae 3 5 Max. 1.5 10 Unit. V *I A pF mW/sr nm nm deg. - 1- Infrared Emitting Diodes(GaAs) EL-1CL3 Power dissipation Vs. Ambient temperature Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature Relative intensity Vs. Wavelength Forward current Vs. Forward voltage Radiant Pattern Relative radiant intensity Vs. Distance - 2- |
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