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| Infrared Emitting Diodes(GaAs) K DNH OESI EL-1K3 DIMENSIONS The EL-1K3 is a high-power GaAs IRED mounted in durable, hermetically sealed TO-18 metal can package, which provides years of reliable performance even under demanding conditions such as use outdoors. (Unit : mm) FEATURES UWide beam angle U urable D UHigh reliability in demanding environments APPLICATIONS UOptical emitters UOptical switches USmoke sensors MAXIMUM RATINGS Item Reverse voltage Forward current *1 Pulse forward current Power dissipation Operating temp. Storage temp. *2 Soldering temp. (Ta=2...) 5 Symbol VR F I F IP PD Topr. Tstg. Tsol. Rating 5 100 1 200 -30~+100 -55~+125 260 Unit V mA A mW ... ... ... *1. pulse width tw Z100 *I sec.period 10msec. T= *2. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Forward voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth 50% Half angle (Ta=2...) 5 Symbol VF R I Ct PO *Ip **I *E Conditions F= I 100mA VR=5V f=1MHz F= I 100mA F= I 100mA F= I 100mA Min. Typ. 1.35 25 4.0 940 50 ae 6 3 Max. 1.7 10 Unit. V *I A pF mW/sr nm nm deg. 2.2 - 1- Infrared Emitting Diodes(GaAs) EL-1K3 Power dissipation Vs. Ambient temperature Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature Relative intensity Vs. Wavelength Forward current vs. Forward voltage Radiant Pattern Relative radiant intensity Vs. Distance - 2- |
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