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Engineering Prototype Report for EP-86 - 6.6 W Multi-Class Powered Device (PD) for Power over Ethernet (PoE) Using DPA-Switch(R) (DPA423G) PoE Class 2 PD - Including IEEE802.3af Compliant Interface Circuit Power Integrations Applications Department EPR-86 April 13, 2006 1.1
Specification Input: 33-57 VDC, Output: 3.3 V / 2.0 A Application Author Document Number Date Revision
Summary and Features * * Meets IEEE802.3af requirements according to University of New Hampshire Interoperability Consortium (UNH-IOC) test results, for Class 1-3 PoE PDs DPA-Switch PWM controller with integrated 220 V power MOSFET switch * Under-voltage (UV) and overvoltage (OV) shutdown functions * Auto-recovering, hysteretic thermal shutdown * Auto-restart function: protects against short-circuit and open loop faults * No-load regulation achieved by cycle skipping * Fully integrated soft-start minimizes start-up stress and overshoot * Externally programmed ILIMIT scales with VIN for power limiting * Lossless MOSFET current sense eliminates external sensing components Small footprint 3.1" x 1", low overall height 0.45" (excluding RJ-45 connector)
*
The products and applications illustrated herein (including circuits external to the products and transformer construction) may be covered by one or more U.S. and foreign patents or potentially by pending U.S. and foreign patent applications assigned to Power Integrations. A complete list of Power Integrations' patents may be found at www.powerint.com.
Power Integrations 5245 Hellyer Avenue, San Jose, CA 95138 USA. Tel: +1 408 414 9200 Fax: +1 408 414 9201 www.powerint.com
EP-86 - 6.6 W, 3.3 V, 2 A PoE Powered Device
13-Apr-2006
Table Of Contents
Introduction.................................................................................................................3 Power Supply Specification ........................................................................................4 Schematic...................................................................................................................5 Circuit Operation.........................................................................................................6 4.1 General ................................................................................................................6 4.2 DPA-Switch Primary.............................................................................................6 4.3 Output Rectification ..............................................................................................6 4.4 Output Feedback..................................................................................................6 4.5 PoE Interface Circuit Description..........................................................................7 4.6 Wide Hysteresis Under-Voltage Lockout..............................................................8 5 Bill of Materials .........................................................................................................10 6 Layout.......................................................................................................................12 7 Transformer Design Spreadsheet.............................................................................13 8 Transformer Specification.........................................................................................15 8.1 Transformer Winding..........................................................................................15 8.2 Electrical Specifications......................................................................................15 8.3 Materials.............................................................................................................15 8.4 Transformer Build Diagram ................................................................................16 8.5 Transformer Construction...................................................................................16 9 Performance Data ....................................................................................................17 9.1 Efficiency............................................................................................................17 9.2 Load Regulation .................................................................................................18 9.3 Line Regulation ..................................................................................................18 9.4 Overload Output Current ....................................................................................19 10 Waveforms............................................................................................................20 10.1 Drain Voltage and Current, Full-Load Operation ................................................20 10.2 Output Voltage Start-Up Profile ..........................................................................20 10.3 Load Transient Response (75% to 100% Load Step) ........................................21 10.4 Output Ripple Measurements.............................................................................22 10.4.1 Ripple Measurement Technique ................................................................22 10.4.2 Output Ripple Measurements.....................................................................23 11 Revision History ....................................................................................................24 1 2 3 4
Important Note: Although this board was designed to satisfy safety isolation requirements, it has not been agency approved. Therefore, please take the appropriate safety precautions.
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EP-86 - 6.6 W, 3.3 V, 2 A PoE Powered Device
1 Introduction
This engineering report describes a PoE power supply designed around the DPA423G. The supply can deliver 6.6 W continuously, from an input voltage range of 33 VDC to 57 VDC. The following design information is provided: the power supply specification, circuit diagrams, a complete bill of materials, the results of the PIXls spreadsheet file that was used to design the supply and detailed information on the design and construction of the transformer. Data and test results that document the performance of the supply under various line and load conditions are also included.
Figure 1 - Populated Circuit Board Top View.
Figure 2 - Populated Circuit Board Bottom View.
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EP-86 - 6.6 W, 3.3 V, 2 A PoE Powered Device
13-Apr-2006
2 Power Supply Specification
Description Input Voltage Under-Voltage ON Under-Voltage OFF Output Output Voltage 1 Output Ripple Voltage 1 Output Current 1 Output Peak Current 1 Total Output Power Average Output Power Average Output Power Full Load Efficiency Environmental Conducted EMI Safety Ambient Temperature TAMB
Meets CISPR22B / EN55022B Designed to meet IEC950, UL1950 Class II
Symbol VIN VIN_UV_ON VIN_UV_OFF VOUT1 VRIPPLE1 IOUT1 IOUT1_PK
Min 33 33 3.135 0 2.5
Typ 48
Max 57 42
Units VDC VDC VDC V mVp-p A A
Comment
3.3
3.465 35 2
5% 20 MHz bandwidth
POUT1 POUT_FAULT 8.6
6.6 73
W W %
R6 = 10.2
0
40
o
C
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EP-86 - 6.6 W, 3.3 V, 2 A PoE Powered Device
3 Schematic
Figure 3 - Schematic.
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EP-86 - 6.6 W, 3.3 V, 2 A PoE Powered Device
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4 Circuit Operation
4.1 General A flyback topology was used to minimize circuit board size, parts count and cost. This topology also provides excellent operating efficiency across the input voltage range. 4.2 DPA-Switch Primary The DPA423G IC implements PWM control of the internal power MOSFET and initiates a soft start-up function when it first powers up. The IC also monitors die temperature as part of its over-temperature protection function and also monitors the input voltage as part of its under-voltage detection and overvoltage shutdown functions. The integrated 220 V MOSFET provides excellent switching characteristics at the selected 400 kHz operating frequency. The MOSFET and controller consume very little power, giving good efficiency across the entire input voltage operating range. Diodes D3 through D9 ensure that the incoming DC input voltage is correctly polarized. Capacitors C1 and C2 and inductor L1 form a low-cost pi () filter that attenuates conducted EMI noise, to keep it from being passed to the incoming line. Resistors R4 and R6 program the internal current limit of the DPA423G, so that it reduces as the input voltage increases. This helps to keep the variance of the maximum output overload current below 5%, across the entire input voltage range. The IC's integrated MOSFET is protected from overvoltage stresses that could damage it (during a line surge) by a primary-side Zener diode clamp (VR3). Zener diode VR3 does not conduct under normal operating conditions. The primary bias winding provides CONTROL pin current after start-up. Diode D2 rectifies the bias winding voltage, while R8 and C11 attenuate high frequency switching noise and reduce the peak charging of the bias voltage. 4.3 Output Rectification The secondary winding voltage is rectified by a low-loss Schottky diode (D11). Low ESR, tantalum output capacitors, C7 and C8, filter the output voltage. The LC output filter (L2, C9 and C10) further attenuates switching noise and ripple from the output voltage. 4.4 Output Feedback Resistor divider (R12 and R13) senses the output voltage and feeds it into the reference pin of a 1.24 V reference IC (U4). The conduction of U4 pulls current through the LED of optocoupler U5, which controls the conduction of its phototransistor (U5-B). The phototransistor modulates the current that flows into the CONTROL pin of U1. Since the DPA-Switch is a current-to-duty-cycle converter, it uses the varying CONTROL pin current to pulse-width modulate the duty cycle of the MOSFET switch. Resistor R10 sets the gain of U4, while R11 and C13 compensate for the variation in gain of U4 over the frequency range of the feedback loop's bandwidth (about 10 kHz). Feedback
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EP-86 - 6.6 W, 3.3 V, 2 A PoE Powered Device
compensation is required to ensure stable operation of the supply and optimum response to line and load transients. Capacitor C12 performs a soft-finish function that prevents the output voltage from overshooting the regulation set point during initial startup of the converter. 4.5 PoE Interface Circuit Description See DI-88 for a full description. Resistor R26 provides the correct impedance for the detection phase of PD operation.
Figure 4 - Detection Impedance V-I curve.
The classification circuit is enabled when Zener diode VR6 conducts (above 11 VDC). Transistor Q9 controls the bias current source programmed to approximately 350 A by resistor R21. This bias current source provides the minimum operating current to voltage reference IC U6. The main classification current flowing through R20 generates a voltage that is referenced to the internal reference (1.24 VDC) of U6 and that later closes the loop by controlling the base drive of Q7. The value of the classification current source is determined by the value of the voltage on the reference pin of U6 divided by the value of R20 in ohms.
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EP-86 - 6.6 W, 3.3 V, 2 A PoE Powered Device
13-Apr-2006
Figure 5 - Table of PoE Classifications and Power Levels.
Figure 6 - Classification Current (Class 2: R34 = 69.8 ; Class 3: R34 = 45.3 ).
Zener diode VR5 conducts above 27 VDC, raising the gate voltage on the pass-switch MOSFET (Q8), turning it on when the gate-threshold voltage is exceeded. Pull-down resistor R25 limits the current through VR5 while pull-down resistor R24 keeps Q8 turned off, unless it is being actively driven on. Zener diode VR4 limits the maximum gate-tosource voltage on Q8 to 15 V. When VR5 conducts, it also turns on Q6 through R23. Transistor Q6 pulls down on the base of Q7, which turns off the main classification current source (although the bias current source of 350 A will continue to conduct). 4.6 Wide Hysteresis Under-Voltage Lockout If there were no other components connected to the L pin, then resistor R5 would set the under-voltage turn-on threshold to approximately 35 VDC and the turn-off threshold to approximately 33 VDC. However, in the case of PoE, the turn-on voltage is much higher than the turn-off voltage. This requires more under-voltage hysteresis. When the power supply is operating normally, the bias voltage is approximately 14 VDC. Resistors R15 and R16 form a voltage divider that turns off the base of Q2, once the DC-DC converter has begun switching and the bias voltage is present. At start-up, when the bias voltage is absent,
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EP-86 - 6.6 W, 3.3 V, 2 A PoE Powered Device
Q2 is on, and sinks additional current from the resistor (R5) that connects the L pin to the DC input voltage. The value of R14 was selected so that an extra 10 A is drawn at startup, which increases the turn-on threshold voltage to 41 VDC typical. However, because Q2 turns off after start-up, the UV turn-off threshold stays at 34 VDC (see DI101 for more details).
Figure 7 - L-pin current without and with the widened UV hysteresis circuit.
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EP-86 - 6.6 W, 3.3 V, 2 A PoE Powered Device
13-Apr-2006
5 Bill of Materials
Item Qty. 1 2 3 4 5 6 7 8 9 10 2 1 1 2 1 3 1 1 1 1 Ref. C1, C2 C3 C4 C6 Description 470 nF, 100 V, Ceramic, X7R, 1210 47 pF, 100 V, Ceramic, NPO, 0603 1000 pF, 1500V, 1808 22 F, 10 V, Tant Electrolytic, SMD Mfg Part Number ECJ-4YB2A474K 06031A470JAT2A 1808SC102KAT1A ECJ-1VB1E104K TAJA226K010R T495X337K006AS GRM188R61C105KA 93D ECJ-3YB1E105K 06033D224KAT2A 1N4148WS-7 Mfg Panasonic AVX AVX Panasonic Kemet Kemet Murata Panasonic AVX Diode Inc.
C5, C13 100 nF 25 V, Ceramic, X7R, 0603 C7, C8, C9 330 F, 6.3 V, Tant Electrolytic, SMD C10 C11 C12 1 F, 16 V, Ceramic, X5R, 0603 1 F, 25 V, Ceramic, X7R, 1206 220 nF, 25 V, Ceramic, X7R, 0603 75 V, 0.2 A, Fast Switching, 50 ns, SOD323
11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29
8 1 1 2 1 1 1 3 1 1 1 1 1 1 1 1 1 1 1
D2 D3, D4, D5, D6, D7, D8, 100 V, 1 A, Rectifier, Glass Passivated, DOD9, D10 213AA (MELF) D11 J1 L1 L2 20 V, 4 A, Schottky, SMD, DO-214AB R/A, RJ45 Non-shielded, PCBM 10 H, 0.85 A
DL4002 SL42-9B RJHS-5080 HM79-10100LFTR7 HM79-101R0LFTR7 MMST3906-7 MMBTA06LT1 MMST3904 SI2328DS ERJ-3EKF1004V ERJ-6ENF6493V ERJ-3EKF1002V ERJ-3GEYJ100V ERJ-3EKF1000V ERJ-3GEYJ5R1V ERJ-3GEYJ750V ERJ-3GEYJ102V ERJ-6ENF3322V
Diodes Inc Vishay Amphenol Canada Zierick B.I.Technologies B.I.Technologies Diodes Inc On Semiconductor Diodes Inc Vishay Panasonic Panasonic Panasonic Panasonic Panasonic Panasonic Panasonic Panasonic Panasonic
J2-1, J2-2 Zierick output pins 1 H, 1.9 A PNP, Small Signal BJT, 40 V, 0.2 A, SOTQ2 323 Q4, Q5, NPN, Small Signal BJT, 80 V, 0.5 A, SOTQ7 23 NPN, Small Signal BJT, 40 V, 0.2 A, SOTQ6 323 Q8 R4 R5 R6 R7 R8 R9 R10 R11 R12 100 V, 1.15 A, 250 m, N-Channel, SOT-23 1.00 M, 1%, 1/16 W, Metal Film, 0603 649 k, 1%, 1/8 W, Metal Film, 0805 10.00 k, 1%, 1/16 W, Metal Film, 0603 10 , 5%, 1/10 W, Metal Film, 0603 100 , 1%, 1/16 W, Metal Film, 0603 5.1 , 5%, 1/10 W, Metal Film, 0603 75 , 5%, 1/10 W, Metal Film, 0603 1 k, 5%, 1/10 W, Metal Film, 0603 33.2 k, 1%, 1/8 W, Metal Film, 0805
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30 31 32 35 36 37 38 39 40 1 1 1 1 1 2 1 1 1 R13 R14 R20 R21 R24 R25 R26
EP-86 - 6.6 W, 3.3 V, 2 A PoE Powered Device
20 k, 5%, 1/10 W, Metal Film, 0603 174 k, 1%, 1/16 W, Metal Film, 0603 69.8 , 1%, 1/16 W, Metal Film, 0603 2 k, 5%, 1/10 W, Metal Film, 0603 220 k, 5%, 1/10 W, Metal Film, 0603 51 k, 5%, 1/10 W, Metal Film, 0603 24.9 k, 1%, 1/8 W, Metal Film, 0805 ERJ-3GEYJ203V ERJ-3EKF1743V ERJ-3GEYJ103V ERJ-3EKF69R8V ERJ-3GEYJ202V ERJ-3GEYJ104V ERJ-3GEYJ224V ERJ-3GEYJ513V ERJ-6ENF2492V HM00-A5861LF DA2062-ALD SIL6029 LSTA30825 SNX1393 YC-1404S DPA423G LMV431AIM5 PC357N3T LMV431AIM5 SMBJ150A BZT52C15T-7 MAZS2700ML ZMM5241B-7 Panasonic Panasonic Panasonic Panasonic Panasonic Panasonic Panasonic Panasonic Panasonic B.I Technologies Coilcraft Hical LiShin Santronics Ying Chin Power Integrations National Semiconductor Sharp National Semiconductor Diodes, Inc Diodes, Inc Panasonic-SSG Diodes Inc
R15, R16 10 k, 5%, 1/10 W, Metal Film, 0603
R22, R23 100 k, 5%, 1/10 W, Metal Film, 0603
41
1
T1
Bobbin, ER14.5/6, Horizontal, 10 pins, SMD
42 43 44 45 46 47 48 49 50
1 1 1 1 1 1 1 1 1
U1 U4 U5 U6 VR3 VR4 VR5 VR6 -
DPA-Switch, DPA423G, SMD-8 1.24 V Shunt Regulator IC, 1%, -40 to 85 C, SOT23-5 Optocoupler, 80 V, CTR 200-400%, 4-Mini Flat 1.24 V Shunt Regulator IC, 1%, -40 to 85 C, SOT23-5 150 V, 5 W, 5%, DO214AC (SMB) 15.0 V, 5%, 150 mW, SOD-323 27.0 V, 5%, 150 mW, SOD-323 11 V, 5%, 500 mW, DO-213AA (MELF) PCB, EP-86, REV B
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EP-86 - 6.6 W, 3.3 V, 2 A PoE Powered Device
13-Apr-2006
6 Layout
Figure 8 - PCB Layout Top Side.
Figure 9 - PCB Layout Bottom Side.
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EP-86 - 6.6 W, 3.3 V, 2 A PoE Powered Device
7 Transformer Design Spreadsheet
DCDC_DPASwitch_Flyback_071405; Rev.2.7; Copyright Power Integrations 2005 INPUT INFO OUTPUT UNITS DPASwitch_Flyback_071405 - Continuous/Discontinuous mode Spreadsheet. Copyright 2005 Power Integrations
ENTER APPLICATION VARIABLES
VDCMIN VDCMAX VO PO n Z VB 36 57 3.3 6.6 Comment 0.8 0.7 14 Volts Volts Volts Volts Watts
DC-DC Converter Minimum DC Input Voltage Maximum DC Input Voltage Output Voltage (main) Verify temperature rise for continuous power. P and G packages may be thermally limited Efficiency Estimate Loss Allocation Factor, (0.7 Recommended) Bias Voltage (Recommended between 12V and 18V)
UV AND OV PARAMETERS
min max
VUVOFF VUVON VOVON VOVOFF RL
30.0 32.2 74.9
33.1 34.7 94.7 619.0
Volts Volts Volts Volts k-Ohms
Minimum undervoltage On-Off threshold Maximum undervoltage Off-On threshold (turn-on) Minimum overvoltage Off-On threshold Maximum overvoltage On-Off threshold (turn-off)
ENTER DPASWITCH VARIABLES
DPASWITCH Chosen Device ILIMITMAX Frequency fS VOR KI ILIMITEXT RX VDS VD VDB KRP/KDP DPA423G DPA423G 1.16 F 375000 38 0.7 16VDC Power Ou 6W 1.34 Amps Hertz 38 Volts 0.7 0.812 Amps 11.0 k-Ohms Volts Volts Volts 36 VDC 13W From DPASWITCH Data Sheet Enter 'F' for fS = 400KHz and 'L' for fS = 300KHz DPASWITCH Switching Frequency Reflected Output Voltage Current Limit Reduction Factor Minimum External Current limit Resistor from X pin to source to set external current limit DPASWITCH on-state Drain to Source Voltage Output Winding Diode Forward Voltage Drop Bias Winding Diode Forward Voltage Drop Ripple to Peak Current Ratio (0.2 < KRP < 1.0 : 1.0< KDP<6.0)
1 0.5 0.7 0.62
ENTER TRANSFORMER CORE/CONSTRUCTION VARIABLES
Core Type Core Manuf Bobbin Manuf Core Bobbin AE LE AL BW M L NS ER14.5
ER14.5 ER14.5_Bobbin 0.176 1.9 1400 1.9 0 2 2
P/N: P/N: cm^2 cm nH/T^2 mm mm
ER14.5-3F3-S CPVS-ER14.5-1S-10P Core Effective Cross Sectional Area Core Effective Path Length Ungapped Core Effective Inductance Bobbin Physical Winding Width Safety Margin Width (Half the Primary to Secondary Creepage Distance) Number of Primary Layers Number of Secondary Turns
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EP-86 - 6.6 W, 3.3 V, 2 A PoE Powered Device
13-Apr-2006
CURRENT WAVEFORM SHAPE PARAMETERS
DMAX IAVG IP IR IRMS 0.52 0.23 0.64 0.40 0.33 Amps Amps Amps Amps Maximum Duty Cycle Average Primary Current Peak Primary Current Primary Ripple Current Primary RMS Current
TRANSFORMER PRIMARY DESIGN PARAMETERS
LP NP NB ALG BP BM BAC ur LG BWE 119 uHenries Primary Inductance 20 Primary Winding Number of Turns 8 Bias Winding Number of Turns 297 nH/T^2 Gapped Core Effective Inductance Peak Flux density during transients (Limit to 3000 Gauss) 2739 Gauss Maximum Flux Density 2152 Gauss AC Flux Density for Core Loss Curves (0.5 X Peak to Peak) 667 Gauss 1203 Relative Permeability of Ungapped Core Gap Length (Lg >> 0.051 mm) 0.06 mm 3.8 mm Effective Bobbin Width
TRANSFORMER SECONDARY DESIGN PARAMETERS
ISP ISRMS IO IRIPPLE 6.38 3.15 2.00 2.43 Amps Amps Amps Amps Peak Secondary Current Secondary RMS Current Power Supply Output Current Output Capacitor RMS Ripple Current
VOLTAGE STRESS PARAMETERS
VDRAIN PIVS PIVB 157 Volts 9 Volts 36 Volts Maximum Drain Voltage (Includes Effect of Leakage Inductance) Output Rectifier Maximum Peak Inverse Voltage Bias Rectifier Maximum Peak Inverse Voltage
ADDITIONAL OUTPUTS
V_OUT2 VD_OUT2 N_OUT2 PIV_OUT2 V_OUT3 VD_OUT3 N_OUT3 PIV_OUT3
I_OUT2 I_OUT3 Negative Output
Volts Volts 0.00 0 Volts Volts Volts 0.00 0 Volts Amps Amps N/A
2nd Output Voltage 2nd Output - Diode Forward voltage 2nd Output - Turns 2nd Output - Diode Peak Inverse Voltage 3rd Output Voltage 3rd Output - Diode Forward voltage 3rd Output - Turns 3rd Output - Diode Peak Inverse Voltage 2nd Output - Output Current 3rd Output - Output Current If negative output exists enter Output number; eg: If VO2 is negative output, enter 2
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EP-86 - 6.6 W, 3.3 V, 2 A PoE Powered Device
8 Transformer Specification
8.1 Transformer Winding
1 2 W4: 10T 1 x 34 AWG W1: 10T 1 x 34 AWG 9,10 W3: 2 T 2 x 28 AWG
3 4 5
W2: 8T 1 x 34 AWG
6,7
Figure 10 - Transformer Electrical Diagram.
8.2
Electrical Specifications
1 second, 60 Hz, from Pins 1-5 to Pins 6-10 Pins 1-3, all other windings open Pins 1-3, all other windings open Pins 1-3, with Pins 6/7-9/10 shorted 1500 VDC 120 H, 10% 7.5 MHz (Min.) 3.0 H (Max.)
Electrical Strength Primary Inductance Resonant Frequency Primary Leakage Inductance
8.3
Materials
Description Core: ER14.5, Ferroxcube 3C96, 3F3 (or equivalent), ALG = 312 nH/T2 Bobbin: ER14.5, 10 pin Magnet Wire: #34 AWG, Double Coated (Heavy Nyleze) Magnet Wire: #28 AWG, Double Coated (Heavy Nyleze) Tape: 3M 1298 Polyester Film (or equivalent), 1.8 mm wide Core Clamp ER14.5 Ferroxcube CLM14.5 Varnish (DIPPED ONLY, NOT VACUUM IMPREGNATED)
Item [1] [2] [3] [4] [5] [6] (optional) [7]
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EP-86 - 6.6 W, 3.3 V, 2 A PoE Powered Device 8.4 Transformer Build Diagram
Tape 1 2 6,7 9,10 5 4 2 3
Figure 11 - Transformer Build Diagram.
13-Apr-2006
Tape W4 Tape W3 Tape W2 Tape W1
8.5
Transformer Construction
Arrange bobbin & rotation such that primary start/finish wires do not overlap. Start at Pin 3. Wind 10 turns of item [3] in 1 layer. Bring finish lead back and terminate on Pin 2. Starting at Pin 4, wind 8 turns of item [3]. Spread turns evenly across bobbin in a single layer. Bring finish lead back and terminate on Pin 5. Use one layer of item [5] for basic insulation. Start at Pins 9 and 10. Wind 2 turns of bifilar item [4] in 1 layer. Bring finish lead back and terminate on Pins 6 and 7. Use one layer of item [5] for basic insulation. Continue from Pin 2. Wind 10 turns of item [3] in 1 layer. Bring finish lead back and terminate on Pin 1. Use one layer of item [5] for basic insulation. Assemble and secure (glue or clamp, item [6]) core halves. Dip varnish item [7] and cure.
Bobbin Preparation W1 W2 Tape W3 Tape W4 Outer Wrap Final Assembly
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EP-86 - 6.6 W, 3.3 V, 2 A PoE Powered Device
9 Performance Data
All measurements were taken at room temperature utilizing a DC input source and DC dynamic loads (except where resistive loads are specified). Input and output voltages and current were measured with dedicated digital multi-meters (DMMs). 9.1 Efficiency
80%
70%
Efficiency (%
60%
36 VDC 48 VDC 57 VDC
50%
40% 0 2 4 6 8
Pout (W)
Figure 12 - Efficiency vs. Line and Load, Room Temperature.
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EP-86 - 6.6 W, 3.3 V, 2 A PoE Powered Device 9.2 Load Regulation
13-Apr-2006
105.0%
102.5%
Regulation (%)
100.0%
3V3 36 VDC 3V3 57 VAC
97.5%
95.0% 0 2 4 6 8
Pout (W)
Figure 13 - Load Regulation, Room Temperature.
9.3
Line Regulation
105.0%
102.5%
Regulation (%)
100.0%
3.3V FL 3.3V LL
97.5%
95.0% 30 40 50 60
Vin (VDC)
Figure 14 - Line Regulation, Room Temperature.
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EP-86 - 6.6 W, 3.3 V, 2 A PoE Powered Device
9.4 Overload Output Current The DC output load current was recorded just prior to the auto-restart operation at various input line voltages. Performance was measured for various values of resistor R6.
4.0
Output Current (A)
3.0
2.0
3.3 V R6 = 10.0 k 3.3 V R6 = 10.2 k
1.0
3.3 V R6 = 10.5 k 3.3 V R6 = 8.66 k
0.0 30 40 50 60
Vin (VDC)
Figure 15 - Overload Output Current vs. Line Voltage for Different Values of R6, Room Temperature.
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EP-86 - 6.6 W, 3.3 V, 2 A PoE Powered Device
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10 Waveforms
10.1 Drain Voltage and Current, Full-Load Operation
Figure 16 - 36 VDC, Full Load. Upper: IDRAIN, 0.5 A / div. Lower: VDRAIN, 50 V, 1 s / div.
Figure 17 - 57 VDC, Full Load. Upper: IDRAIN, 0.5 A / div. Lower: VDRAIN, 50 V, 1 s / div.
10.2 Output Voltage Start-Up Profile
Figure 18 - Start-Up Profile, 36 VDC, No Load (worst-case). Upper: VOUT, 1 V / div. Lower: VDRAIN, 50 V, 1 s / div.
Figure 19 - Start-Up Profile, 57 VDC, No Load (worst-case). Upper: VOUT, 1 V / div. Lower: VDRAIN, 50 V, 1 s / div.
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EP-86 - 6.6 W, 3.3 V, 2 A PoE Powered Device
10.3 Load Transient Response (75% to 100% Load Step) In the figures shown below, signal averaging was used to better enable viewing of the load transient response. The oscilloscope was triggered using the load current step as a trigger source. Since the output switching is random with respect to the load transient, contributions to the output ripple from these sources will average out, leaving the contribution only from the load step response.
Figure 20 - Transient Response, 36 VDC, 75-100-75% Load Step. Upper: Load Current, 1 A / div. Lower: Output Voltage, 20 mV, 500 s / div.
Figure 21 - Transient Response, 57 VDC, 75-100-75% Load Step. Upper: Load Current, 1 A / div. Lower: Output Voltage, 20 mV, 500 s / div.
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EP-86 - 6.6 W, 3.3 V, 2 A PoE Powered Device
13-Apr-2006
10.4 Output Ripple Measurements 10.4.1 Ripple Measurement Technique For DC output ripple measurements, a modified oscilloscope test probe must be utilized in order to reduce spurious signal pickup. Details of the probe modification are provided in Figures 22 and 23. The 5125BA probe adapter is affixed with two capacitors tied in parallel across the probe tip. The capacitors include one (1) 0.1 F/50 V ceramic type and one (1) 1.0 F/50 V aluminum electrolytic. Since the aluminum electrolytic type capacitor is polarized, proper polarity must be observed when connecting it to the output (see below).
Probe Ground
Probe Tip
Figure 22 - Oscilloscope Probe Prepared for Ripple Measurement (End cap and ground lead removed).
Figure 23 - Oscilloscope Probe with Probe Master 5125BA BNC Adapter (Modified with wires for probe ground for ripple measurement, and two parallel decoupling capacitors added).
Power Integrations, Inc. Tel: +1 408 414 9200 Fax: +1 408 414 9201 www.powerint.com
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EP-86 - 6.6 W, 3.3 V, 2 A PoE Powered Device
13-Apr-2006
10.4.2 Output Ripple Measurements
Figure 24 - Ripple, 36 VDC, Full Load. Upper: 50 s / div, 10 mV / div. Lower: 2 s / div, 10 mV / div.
Figure 25 - Ripple, 48 VDC, Full Load. Upper: 50 s / div, 10 mV / div. Lower: 2 s / div, 10 mV / div.
Figure 26 - Ripple, 57 VDC, Full Load. Upper: 50 s / div, 10 mV / div. Lower: 2 s / div, 10 mV / div.
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Power Integrations Tel: +1 408 414 9200 Fax: +1 408 414 9201 www.powerint.com
EP-86 - 6.6 W, 3.3 V, 2 A PoE Powered Device
13-Apr-2006
11 Revision History
Date January 3, 2006 April 13 2006 Author RM/LN/ME RM Revision 1.0 1.1 Description & changes Initial release Updated photo, layout, schematic and BOM
Power Integrations, Inc. Tel: +1 408 414 9200 Fax: +1 408 414 9201 www.powerint.com
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EP-86 - 6.6 W, 3.3 V, 2 A PoE Powered Device Notes
13-Apr-2006
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Power Integrations Tel: +1 408 414 9200 Fax: +1 408 414 9201 www.powerint.com
EP-86 - 6.6 W, 3.3 V, 2 A PoE Powered Device Notes
13-Apr-2006
Power Integrations, Inc. Tel: +1 408 414 9200 Fax: +1 408 414 9201 www.powerint.com
Page 26 of 28
EP-86 - 6.6 W, 3.3 V, 2 A PoE Powered Device Notes
13-Apr-2006
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Power Integrations Tel: +1 408 414 9200 Fax: +1 408 414 9201 www.powerint.com
EP-86 - 6.6 W, 3.3 V, 2 A PoE Powered Device
13-Apr-2006
For the latest updates, visit our website: www.powerint.com
Power Integrations reserves the right to make changes to its products at any time to improve reliability or manufacturability. Power Integrations does not assume any liability arising from the use of any device or circuit described herein. POWER INTEGRATIONS MAKES NO WARRANTY HEREIN AND SPECIFICALLY DISCLAIMS ALL WARRANTIES INCLUDING, WITHOUT LIMITATION, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, AND NON-INFRINGEMENT OF THIRD PARTY RIGHTS. PATENT INFORMATION The products and applications illustrated herein (including transformer construction and circuits external to the products) may be covered by one or more U.S. and foreign patents, or potentially by pending U.S. and foreign patent applications assigned to Power Integrations. A complete list of Power Integrations' patents may be found at www.powerint.com. Power Integrations grants its customers a license under certain patent rights as set forth at http://www.powerint.com/ip.htm. The PI Logo, TOPSwitch, TinySwitch, LinkSwitch, DPA-Switch, PeakSwitch, EcoSmart, Clampless, E-Shield, Filterfuse, PI Expert and PI FACTS are trademarks of Power Integrations, Inc. Other trademarks are property of their respective companies. (c)Copyright 2006 Power Integrations, Inc.
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