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| ESJA19 HIGH VOLTAGE DIODE ESJA19 is high reliability resin molded type high voltage diode in small size package which is sealed (a multilayed mesa type silicon chip) by epoxy resin. (10kV,12kv/5mA) Outline Drawings Lot No. Cathode Mark o 2.5 o 0.5 Features Ultra high speed switching Low VF High surge resisitivity for CRT discharge High reliability design Ultra small pakage 27 min. 10 27 min. Cathode Mark Type Mark Applications Rectification for CRT display monitor high voltage power supply (FBT: Flyback Transformer) ESJA19-10 ESJA19-12 Maximum Ratings and Characteristics Absolute Maximum Ratings Items Symbols Condition ESJA19 -10 -12 12 5 Units Repetitive Peak Reverse Voltage Average Output Current Surge Current Junction Temperature Allowable Operation Case Temperature Storage Temperature VRRM IO IFSM Tj Tc Tstg Ta=25C,Resistive Load 10mS Sine-half wave peak value 10 kV mA A C C C 0.5 120 100 -40 to +120 Electrical Characteristics (Ta=25C Unless otherwise specified ) Items Symbols Conditions ESJA19 -10 Maximum Forward Voltage Drop Maximum Reverse Current Maximum Reverse Recovery Time Junction Capacitance VF IR trr Cj IF=10mA VR=VRRM Ta=25C,IF=2mA,IR=4mA Ta=25C,VR=0V,f=1MHz 36 2 0.045 1 -12 42 V A s pF Units ESJA19(10kV,12kv/5mA) Characteristics 30 ESJA19-10 Tj=100C ESJA19-12 0.1 20 I F Tj= 25C Tj=100C IR [A] 0.01 [mA] 10 ESJA19-10 ESJA19-12 ESJA19-10 Tj= 25C ESJA19-12 0 1E-3 0 20 40 60 80 0 4 8 12 16 V F [V] VR [kV] Forward Characteristics Reverse Characteristics 1.0 Tj=25C f=1MHz 100 0.8 80 Tj= 25C I R =100 A N=100pcs. Cj [pF] 0.6 N [pcs.] ESJA19-10 ESJA19-12 60 0.4 40 ESJA19-12 ESJA19-10 0.2 20 0.0 0 0 40 80 120 Bias 160 200 8 12 16 20 24 28 V [V] V AV [kV] Junction Capacitance Characteristics Avalanche Breakdown Voltage 0.01F 100 ESJA19-10 Tj= 25C N=100pcs. D.U.T 1kohm 50 150 kohm 100ohm N [pcs.] 0 100 ESJA19-12 OSCILLO SCOPE 50 IF=2mA 0 IR=4mA 1mA 0 0.00 0.02 0.04 0.06 0.08 0.10 trr ( s) trr Reverse Recovery Time |
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