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02.08.06
Features * +3.3V or +5.0 V single power supply * transimpedance 600 (50 load) * Typical 2200 MHz broad bandwidth * 16 dB high gain * Over 20 dB wide dynamic range * Differential output * Excellent equivalent input noise current of 9 pA/Hz
F0100404B
3.3V/5V 1.25 Gb/s Receiver
Transimpedance Amplifier
Applications * G bit Ethernet (1.25 Gb/s) * Preamplifier of an optical receiver circuit for fiber channel (1.0625 Gb/s)
Functional Description The F0100404B is a stable GaAs integrated transimpedance amplifier capable of 16 dB gain at a typical 1900 MHz 3 dB-cutoff-frequency, making it ideally suited for an optical receiver circuit for a Gbit Ethernet (1.25 Gb/s), instrumentation, and measurement applications. The integrated feedback loop design provides broad bandwidth and stable operation. The F0100404B typically specifies a high transimpedance of 600 (RL=50 ) with a wide dynamic range of over 20 dB. Furthermore, it can operate with a supply voltage of single +3.3V or +5.0 V. It features a typical dissipation current of 43 mA. Only chip-shipment is available for all product lineups of GaAs transimpedance amplifiers, because the packaged preamplifier can not operate with the maximum performance owing to parasitic capacitance of the package.
1.25Gb/s Transimpedance Amplifier
Absolute Maximum Ratings
F0100404B
Ta=25 C, unless specified
Parameter Supply Voltage Supply Current Ambient Operating Temperature Storage Temperature Symbol VDD3.3 VDD5.0 IDD Ta Tstg Value VSS-0.5 to VSS+4.0 VSS-0.5 to VSS+7.0 65 -40 to +90 -55 to +125 Units V V mA C C
Recommended Operating Conditions Ta=25 C, VSS=GND, unless specified
Value Parameter Symbol Min. Supply Voltage Ambient Operating Temperature VDD3.3 VDD5.0 Ta 2.8 4.5 0 Max. 3.6 5.25 85 V V C Units
Electrical Characteristics Ta=25 C, VDD=3.3V, VSS=GND, unless specified
Value Parameter Supply Current Gain(Positive) *1 Gain(negative) *1 High Frequency Cut-off (positive) *1 High Frequency Cut-off (negative) *1 Input Impedance Trans-Impedance(positive) *1,*2 Trans-Impedance(negative) *1,*2 Output Voltage(positive) *1 Output Voltage(negative) *1 Input Voltage 3.3 V Terminal Voltage *3 Symbol IDD S21P S21N FCP FCN RI ZTP ZTN VOP VON VIN V33 Test Conditions Min. DC PIN=-50dBm f=1MHz, RL=50 PIN=-50dBm f=1MHz, RL=50 PIN=-50dBm RL=50 PIN=-50dBm RL=50 f=1MHz f=1MHz f=1MHz DC DC DC DC 29 13.0 13.0 1.25 1.25 80 450 450 1.4 1.5 0.75 2.8 Typ. 43 16.0 16.0 1.9 1.7 95 600 625 1.7 2.0 0.9 Max. 60 21.0 21.0 3 3 160 2.4 2.5 1.15 3.6 mA dB dB GHz GHz V V V V Units
S21P,N 20 *1 Defined at OUT and OUT *2 ZTP,N= RI+50 x10 2 *3 Voltage of V DD3.3 pad when supplied the voltage(4.50~5.25 V) to VDD5.0 pad
1.25Gb/s Transimpedance Amplifier
Block Diagram
F0100404B
VDD5.0
VDD3.3 OUT
OUT Level Shift IN VSS OUTB Buffer OUTB
Die Pad Description
VDD3.3 VDD5.0 VSS IN OUT OUTB
Power Supply Power Supply Power Supply Input Output Output
1.25Gb/s Transimpedance Amplifier
Die Pad Assignments
F0100404B
(12)
(11)
(10)
(9)
(8)
(13)
(7)
(14)
(6)
(5) (1) (2) (3) (4)
No. (1) (2) (3) (4) (5) (6) (7) (8) (9)
Symbol VDD3.3 VDD5.0 OUTB VSS OUTB VSS OUT VSS OUT
Center Coordinates(m) (75,155) (315,75) (555,75) (715,75) (715,235) (715,395) (715,555) (715,715) (555,715)
No. (10) (11) (12) (13) (14)
Symbol VSS VDD3.3 VDD3.3 VSS IN
Center Coordinates(m) (395,715) (235,715) (75,715) (75,555) (75,395)
O A
(0,0) (790,790)
1.25Gb/s Transimpedance Amplifier
Test Circuits 1) AC Characteristics
F0100404B
50 Pin=-50 dBm f=300 kHz~3 GHz IN
Network Analyzer
50
VDD DUT VSS Prober
OUT Switch OUT 50
2) Sensitivity Characteristics
VPD
5V 0.022F
E/O Converter
Optical Attenuater
VCC PD DUT
5V 0.022F
Pulse Pattern Generator
CLK 0.022F Comparator SEI F0311018S
Bit Error Rate Tester
1.25Gb/s Transimpedance Amplifier
Examples of AC Characteristics
F0100404B
(1) Gain (S21P) Ta=25 C, VDD=+5.0 V, VSS=GND, Pin=-50 dBm, RL=50 , 300 kHz-3 GHz
24 21 18 15
S21(dB)
12 9 6 3 0 1M 10M f(Hz) 100M 1G
(2) Gain (S21N) Ta=25 C, VDD=+5.0 V, VSS=GND, Pin=-50 dBm, RL=50 , 300 kHz-3 GHz
24 21 18 15
S21(dB)
12 9 6 3 0 1M 10M f(Hz) 100M 1G
1.25Gb/s Transimpedance Amplifier
F0100404B
(3) Input Noise Current Density & Transimpedance
INPUT NOISE CURRENT DENSITY & TRANSIMPEDANCE(Typical Vaiues) Freq. (MHz) 10 20 30 50 80 100 200 300 400 500 600 700 800 900 1000 Zt() (RF transimpedance) 683 682 679 663 656 649 652 642 649 641 662 663 670 685 685 Ini(pA/Hz) (Equivalent input noise currentdensity) 9.68 8.96 9.29 8.08 8.72 8.60 9.07 8.54 8.25 8.68 8.90 10.80 10.60 10.30 8.96
1.25Gb/s Transimpedance Amplifier
Typical Bit Error Rate
F0100404B
DATA RATE: 1.25 Gb/s PRBS 223-1, Ta=25 C, VDD=+5.0 V, VSS=GND, RL=50
10 -3
-1.2 10 0 -1.3 10 0 10 -4 -1.4 10 0
3.0V 3.3V 3.6V
Bit Error Ratio
10 -5
-6 100
-1.5 10 0 -1.6 10
10 -7 10
-1.7 10 0 -8 -1.8 10 0 10 -9 -1.9 10 0 10 -11
10 -12 -30 -29 -28 -27 -26 -25 -24 -23 -22 10 -10
Optical Input Power (dBm)
1.25Gb/s Transimpedance Amplifier
General Description
F0100404B
A transimpedance amplifier is applied as a pre-amplifier which is an amplifier for a faint photo-current from a PIN photo diode (PD). The performance in terms of sensitivity, bandwidth, and so on, obtained by this transimpedance amplifier strongly depend on the capacitance brought at the input terminal; therefore, "typical", "minimum", or "maximum" parameter descriptions can not always be achieved according to the employed PD and package, the assembling design, and other technical experts. This is the major reason that there is no product lineup of packaged transimpedance amplifiers. Thus, for optimum performance of the transimpedance amplifier, it is essential for customers to design the input capacitance carefully. Hardness to electro-magnetic interference and fluctuation of a power supply voltage is also an important point of the design, because very faint photo-current flows into the transimpedance amplifier. Therefore, in the assembly design of the interconnection between a PD and a transimpedance, noise should be taken into consideration.
Recommendation SEI basically recommends the F08 series PINAMP modules for customers of the transimpedance amplifiers. In this module, a transimpedance amplifier, a PD, and a noise filter circuit are mounted on a TO-18-can package hermetically sealed by a lens cap, having typically a fiber pigtail. The F08 series lineups are the best choice for customers to using the F01 series transimpedance amplifiers. SEI's F08 series allows the customers to resolve troublesome design issues and to shorten the development lead time.
Noise Performance The F0100404B based on GaAs FET's shows excellent low-noise characteristics compared with IC's based on the silicon bipolar process. Many transmission systems often demand superior signal-to-noise ratio, that is, high sensitivity; the F0100404B is the best choice for such applications. The differential circuit configuration in the output enable a complete differential operation to reduce common mode noise: simple single ended output operation is also available.
1.25Gb/s Transimpedance Amplifier
Die-Chip Description
F0100404B
The F0100404B is shipped like the die-chip described above. The die thickness is typically 280 m 20 m with the available pad size uncovered by a passivation film of 95 m square. The material of the pads is TiW/Pt/Au and the backside is metalized by Ti/Au.
Assembling Condition SEI recommends the assembling process as shown below and affirms sufficient wirepull and die-shear strength. The heating time of one minute at the temperature of 310 C gave satisfactory results for die-bonding with AuSn performs. The heating and ultrasonic wire-bonding at the temperature of 150 C by a ball-bonding machine is effective.
Quality Assurance For the F01 series products, there is only one technically inevitable drawback in terms of quality assurance which is to be impossible of the burn-in test for screening owing to dieshipment. SEI will not ship them if customers do not agree on this point. On the other hand, the lot assurance test is performed completely without any problems according to SEI's authorized rules. A microscope inspection is conducted in conformance with the MIL-STD883C Method 2010.7.
Precautions Owing to their small dimensions, the GaAs FET's from which the F0100404B is designed are easily damaged or destroyed if subjected to large transient voltages. Such transients can be generated by power supplies when switched on if not properly decoupled. It is also possible to induce spikes from static-electricity-charged operations or ungrounded equipment.
Electron Device Department

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