 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1260 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 60 Watts Single Ended Package Style AT HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 150 Watts Junction to Case Thermal Resistance 1.2 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 50 V Drain to Source Voltage 50 V Gate to Source Voltage 30V o -65 o C to 150o C 8A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gai Drain Efficiency Load Mismatch Toleranc MIN 10 60 TYP 60WATTS OUTPUT ) MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 1.6 A, Vds = 12.5 V, F = 175 MHz Idq = 1.6 A, Vds = 12.5 V, F = 175 MHz Idq = 1.6 A, Vds = 12.5 V, F = 175 MHz VSWR ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltag Zero Bias Drain Curren Gate Leakage Curren Gate Bias for Drain Curren Forward Transconductanc Saturation Resistanc Saturation Curren Common Source Input Capacitanc Common Source Feedback Capacitanc Common Source Output Capacitanc 1 3.2 0.25 30 160 24 120 MIN 40 4 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.2 A, Vgs = 0V Vgs = 0V Vgs = 30V Vgs = Vds Vds = 12.5 V, Vds = 0 V, Ids = 0.4 A, Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 32 A Vgs = 20V, Vds = 10V Vds = 12.5 V, Vgs = 0V, F = 1 MHz Vds = 12.5 V, Vgs = 0V, F = 1 MHz Vds = 12.5 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com F1260 POUT VS PIN GRAPH F1260 POUT VS PIN F=175 MHZ; IDQ=1.6A; VDS=12.5V 70 60 50 40 30 20 10 0 0 1 2 3 PIN IN WATTS CAPACITANCE VS VOLTAGE F1C 4 DIE CAPACITANCE 16.00 15.00 14.00 13.00 1000 Coss Ciss 100 12.00 Efficiency = 65% 11.00 10.00 9.00 4 5 6 POUT 10 0 5 10 15 VDS IN VOLTS Crss 7 GAIN 20 25 30 IV CURVE F1C 4 DIE IV CURVE 35 30 ID AND GM VS VGS F1C 4 DIE GM & ID vs VGS 100 Id 25 20 15 10 Gm 10 1 5 0 0 2 4 6 8 10 Vds in Volts 12 14 16 18 20 0.1 0 2 4 6 Vgs in Volts 8 10 12 14 Vg = 2V Vg = 4V Vg = 6V Vg = 8V Vg = 10V Vg = 12V S11 AND S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
Price & Availability of F1260
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |