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| FBI2A4S1.......FBI2M4S1 2 Amp. Glass Passivated Bridge Rectifier Dimensions in mm. 20 3.5 Plastic Case Voltage 50 to 1000 V. Current 2 A. (R) _ 0.8 + 0.05 + * Glass Passivated Junction Chips. L 4 4 4 suffix -4 1 0.5 * UL recognized under component index file number E130180. * Lead and polarity identifications. * Case: Molded Plastic. * Ideal for printed circuit board (P .C.B.). * The plastic material carries U/L recognition 94 V-O. 13.5 7 * Mounting Instructions * High temperature soldering guaranteed: 260 C - 10 sc. * Recommended mounting torque: 8 Kg.cm. Maximum Ratings, according to IEC publication No. 134 FBI2A 4S1 FBI2B 4S1 100 70 FBI2D FBI2G 4S1 4S1 200 140 400 280 FBI2J 4S1 600 420 FBI2K FBI2M 4S1 4S1 800 560 1000 700 VRRM VRMS IF(AV) IFSM I2t VDIS Tj Tstg Peak recurrent reverse voltage (V) Maximum RMS voltage (V) Max. Average forward current with heatsink without heatsink 8.3 ms. peak forward surge current (Jedec Method) 50 35 4.5 A at 65 C 2.0 A at 25 C 60 A 15 A2 sec 1500 V - 55 to + 150 C - 55 to +150 C Rating for fusing ( t<8.3 ms.) Dielectric strength (terminals to case, AC 1 min.) Operating temperature range Storage temperature range Electrical Characteristics at Tamb = 25C VF IR Rth (j-c) Rth (j-a) Max. forward voltage drop per element at IF =2 A Max. reverse current per element at VRRM MAXIMUM THERMAL RESISTANCE Junction-Case. With Heatsink. Junction-Ambient. Without Heatsink. 1.0 V 5A 12 C/W 40 C/W Jan - 00 FBI2 - 4S1 Characteristic Curves TYPICAL FORWARD CHARACTERISTIC Tamb = 25 C FORWARD CURRENT DERATING CURVE 10 4 heatsink Tc Tc _ + 3 1.0 on glass-epoxi substrate sine wave R-load on heatsink _ + 2 0.1 1 P.C.B. soldering land 5 mm o sine wave R-load free in air 0 0.6 1.0 1.4 VF , instantaneous forward voltage (V) 0 0 25 50 75 100 125 150 175 Tamb, ambient temperature (C) MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 60 50 40 30 20 10 0 1 10 Number of cycles at 60 Hz. 100 Jan - 00 |
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