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FDS6984S
September 2000
FDS6984S
Dual Notebook Power Supply N-Channel PowerTrench SyncFETTM
General Description
The FDS6984S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6984S contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.
Features
* Q2: Optimized to minimize conduction losses Includes SyncFET Schottky diode RDS(on) = 19 m=@ VGS = 10V RDS(on) = 28 m=@ VGS = 4.5V * Q1: Optimized for low switching losses Low gate charge ( 5 nC typical) RDS(on) = 0.040=@ VGS = 10V RDS(on) = 0.055=@ VGS = 4.5V
8.5A, 30V
5.5A, 30V
D1 D1 D2 D2 S1 G1
5 6 7
Q1
4 3 2
Q2
SO-8
S2
8
1
G2
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage
TA = 25C unless otherwise noted
Parameter
Q2
30
(Note 1a)
Q1
30 20 5.5 20 2 1.6 1 0.9 -55 to +150
Units
V V A W
- Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation
Drain Current
20 8.5 30
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
C/W C/W
Package Marking and Ordering Information
Device Marking FDS6984S Device FDS6984S Reel Size 13" Tape width 12mm Quantity 2500 units
2000 Fairchild Semiconductor Corporation
FDS6984S Rev C(W)
FDS6984S
Electrical Characteristics
Symbol
BVDSS IDSS IGSSF IGSSR VGS(th) VGS(th) ===TJ RDS(on)
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage
Test Conditions
VGS = 0 V, ID = 1 mA VGS = 0 V, ID = 250 A VDS = 24 V, VGS = 0 V
Type Min
Q2 Q1 Q2 Q1 All All Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 30 20 1 1 30 30
Typ
Max Units
V 500 1 100 -100 3 3 A nA nA V mV/C 19 32 28 40 60 55
Off Characteristics
Zero Gate Voltage Drain Current Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V
Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V
(Note 2)
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
VDS = VGS, ID = 1 mA VDS = VGS, ID = 250 A ID = 1 mA, Referenced to 25C ID = 250 uA, Referenced to 25C VGS = 10 V, ID = 8.5 A VGS = 10 V, ID = 8.5 A, TJ = 125C VGS = 4.5 V, ID = 7 A VGS = 10 V, ID = 5.5 A VGS = 10 V, ID = 5.5 A, TJ = 125C VGS = 4.5 V, ID = 4.6 A VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 8.5 A VDS = 5 V, ID = 5.5 A VDS = 15 V, VGS = 0 V, f = 1.0 MHz
-6 -4 16 24 23 35 53 48
m
ID(on) gFS
On-State Drain Current Forward Transconductance
A 26 40 1233 462 344 113 106 40 8 10 5 14 25 21 11 7 11 8.5 5 2.4 4 3.1 16 18 10 25 40 34 20 14 16 12 S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 15 V, ID = 1 A, VGS = 10V, RGEN = 6
ns ns ns ns nC nC nC
Q2 VDS = 15 V, ID = 8.5 A, VGS =5V Q1 VDS = 15 V, ID = 5.5 A, VGS = 5 V
FDS6680S Rev C (W)
FDS6984S
Electrical Characteristics
Symbol
IS trr Qrr VSD
(continued)
TA = 25C unless otherwise noted
Parameter
Test Conditions
Type Min
Q2 Q1 Q2
(Note 2) (Note 2)
Typ
Max Units
3.0 1.3 A ns 0.7 1.2 nC V
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Reverse Recovery Time Reverse Recovery Charge Drain-Source Diode Forward Voltage IF = 10A, diF/dt = 300 A/s VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 1.3 A 17 12.5 0.5 0.74
(Note 3)
Q2 Q1
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
78C/W when mounted on a 0.5in2 pad of 2 oz copper
b)
125C/W when mounted on a 0.02 in2 pad of 2 oz copper
c)
135C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. See "SyncFET Schottky body diode characteristics" below. 3. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDS6680S Rev C (W)
FDS6984S
Typical Characteristics: Q2
50
2.6 VGS = 10V 6.0V 5.0V 4.5V 2.2 VGS = 4.0V
40
30 4.0V
1.8
4.5V 5.0V
20
1.4 6.0V 3.5V 1 8.0V 10V
10
0 0 1 2 3 VDS, DRAIN-SOURCE VOLTAGE (V)
0.6 0 10 20 30 40 50 ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.06
1.9
ID = 10A VGS = 10V
ID = 5A 0.05 0.04
1.6
1.3 0.03 1 0.02 0.7 TA = 25 C 0.01 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
o
TA = 125 C
o
0.4 -50 -25 0 25 50 75 100
o
125
150
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
50 VDS = 5V 40
o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10 VGS = 0V
TA = -55 C
o
25 C 1 125 C TA = 125 C 25 C 0.1 -55 C
o o o
o
30
20 0.01 10 0.001 1.5 2.5 3.5 4.5 5.5 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V)
0 VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS6680S Rev C (W)
FDS6984S
Typical Characteristics: Q2
10 ID =10A 8 VDS = 5V 15V 10V
2000 f = 1MHz VGS = 0 V 1600 CISS 1200
6
4
800 COSS CRSS
2
400
0 0 3 6 9 12 15 18 21 Qg, GATE CHARGE (nC)
0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 RDS(ON) LIMIT 100s 10 10ms 100ms 1 DC 0.1 VGS = 10V SINGLE PULSE RJA = 135 C/W TA = 25 C 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 0
o o
Figure 8. Capacitance Characteristics.
50 SINGLE PULSE RJA = 135C/W TA = 25C
1ms
40
1s 10s
30
20
10
0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
FDS6680S Rev C (W)
FDS6984S
Typical Characteristics Q1
40 VGS = 10V 6.0 30 5.0 4.5 20 4.0V
3 VGS = 3.0V 2.5 3.5V 2 4.0V 4.5V 1.5 3.5V 5.0V 6.0V 3.0 1 10V
10
0 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V)
0.5 0 10 20 30 ID, DRAIN CURRENT (A)
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with Drain Current and Gate Voltage.
0.2
1.8 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100
o
ID = 4.6A VGS = 10V 0.15
ID = 2.3 A
0.1
TA = 125 C
o
0.05 TA = 25 C 0 2.5 3 3.5 4 4.5 VGS, GATE TO SOURCE VOLTAGE (V) 5
o
125
150
TJ, JUNCTION TEMPERATURE ( C)
Figure 13. On-Resistance Variation with Temperature.
25 VDS = 5V 20
o
Figure 14. On-Resistance Variation with Gate-to-Source Voltage.
100
TA = -55 C 25 C 125 C
o
o
VGS = 0V 10 TA = 125 C 25 C
o o
15
1
10
0.1
-55 C
o
5
0.01
0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V)
0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS6680S Rev C (W)
FDS6984S
Typical Characteristics Q1
10 ID = 4.6A 8
VDS = 5V 15V
700 10V 600 500 CISS f = 1MHz VGS = 0 V
6
400 300 200
4
2
COSS CRSS
100 0 0 2 4 6 8 10 0 5 10 15 20 25 30 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)
0
Figure 17. Gate Charge Characteristics.
100 RDS(ON) LIMIT 10 100ms 1 DC 0.1 VGS = 10V SINGLE PULSE RJA = 135 C/W TA = 25 C 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 0
o o
Figure 18. Capacitance Characteristics.
30
100s 1ms 10ms
SINGLE PULSE RJA = 135C/W TA = 25C 20
1s 10s 10
0.01
0.1
1 t1, TIME (sec)
10
100
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum Power Dissipation.
1 TRANSIENT THERMAL RESISTANCE 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.001 0.01 0.1 t 1, TIME (s ec) 1
D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk)
r(t) , NO RMALIZED EFFECTIVE
R JA (t) = r(t) * R JA R JA = 135C/W
t1
t2
TJ - T A = P * R JA(t) Duty Cycle, D = t1 /t2
10 100 300
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS6680S Rev C (W)
FDS6984S
Typical Characteristics (continued)
SyncFET Schottky Body Diode Characteristics
Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 22 shows the reverse recovery characteristic of the FDS6984S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.
0.1 125oC 0.01
IDSS, REVERSE LEAKAGE CURRENT (A)
0.001
3A/DIV
0.0001
25 C
o
0.00001 0 10 20 30 VDS, REVERSE VOLTAGE (V)
Figure 24. SyncFET body diode reverse leakage versus drain-source voltage and temperature.
10nS/DIV
Figure 22. FDS6984S SyncFET body diode reverse recovery characteristic.
For comparison purposes, Figure 23 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6690A).
3A/DIV
0V
10nS/DIV
Figure 23. Non-SyncFET (FDS6690A) body diode reverse recovery characteristic.
FDS6680S Rev C (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R)
DISCLAIMER
FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM POPTM PowerTrench(R)
QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM
VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. F1

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