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FFAF10U20DN
FFAF10U20DN
Features
* Ultrafast with soft recovery * Low forward voltage
Applications
* * * * Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-220F TO-3PF
1 2 3
1. Anode 2.Cathode 3. Anode
ULTRA FAST RECOVERY POWER RECTIFIER
Absolute Maximum Ratings (per diode) TC=25C unless otherwise noted
Symbol VRRM IF(AV) IFSM TJ, TSTG Parameter Peak Repetitive Reverse Voltage Average Rectified Forward Current @ TC = 100C Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Value 200 10 100 - 65 to +150 Units V A A C
Thermal Characteristics
Symbol RJC Parameter Maximum Thermal Resistance, Junction to Case Value 4.0 Units C/W
Electrical Characteristics (per diode) TC=25 C unless otherwise noted
Symbol VFM * Parameter Maximum Instantaneous Forward Voltage IF = 10A IF = 10A Maximum Instantaneous Reverse Current @ rated VR Maximum Reverse Recovery Time Maximum Reverse Recovery Current Maximum Reverse Recovery Charge (IF =10A, di/dt = 200A/s) Avalanche Energy Min. TC = 25 C TC = 100 C TC = 25 C TC = 100 C 0.5 Typ. Max. 1.2 1.0 A 10 100 35 2.5 45 ns A nC mJ Units V
IRM *
trr Irr Qrr WAVL
* Pulse Test: Pulse Width=300s, Duty Cycle=2%
(c)2001 Fairchild Semiconductor Corporation
Rev. A, December 2001
FFAF10U20DN
Typical Characteristics
50 1000
[A]
100
Forward Current , IF [A]
10
TC = 100 C TC = 25 C
o
o
TC = 100 C
10
o
Reverse Current , I
R
1
TC = 25 C
0.1
o
1
0.01
0.1 0.0
0.001 0.5 1.0 1.5 2.0 0 50 100 150 200
Forward Voltage , VF [V]
Reverse Voltage , VR [V]
Figure 1. Typical Forward Voltage Drop vs. Forward Current
400 40
Figure 2. Typical Reverse Current vs. Reverse Voltage
Reverse Recovery Time , trr [ns]
Typical Capacitance at 0V = 286 pF
IF = 10A o Tc = 25 C
35
Capacitance , Cj [pF]
300
200
30
100
25
0.1
1
10
100
20 100
500
Reverse Voltage , VR [V]
di/dt [A/s]
Figure 3. Typical Junction Capacitance
Figure 4. Typical Reverse Recovery Time vs. di/dt
16 14 12 10
Reverse Recovery Current , rr [A] I
5
IF = 10A o TC = 25 C
4
Average Forward Current , I
F(AV)
[A]
6
DC
3
8 6 4 2 0 60
2
1
0 100
500
80
100
120
o
140
160
di/dt [A/s]
Case Temperature , TC [ C]
Figure 5. Typical Reverse Recovery Current vs. di/dt
(c)2001 Fairchild Semiconductor Corporation
Figure 6. Forward Current Derating Curve
Rev. A, December 2001
FFAF10U20DN
Package Dimensions
TO-3PF
5.50 0.20
4.50 0.20
15.50 0.20
o3.60 0.20
3.00 0.20 (1.50)
10.00 0.20
10
26.50 0.20
23.00 0.20
16.50 0.20
14.50 0.20
0.85 0.03
16.50 0.20
2.00 0.20
14.80 0.20
2.00 0.20 2.00 0.20 4.00 0.20 0.75 -0.10
+0.20
2.00 0.20
2.50 0.20
2.00 0.20
3.30 0.20
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.90 -0.10
+0.20
3.30 0.20
2.00 0.20
5.50 0.20
1.50 0.20
Dimensions in Millimeters
Rev. A, December 2001
(c)2001 Fairchild Semiconductor Corporation
22.00 0.20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FAST(R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R)
VCXTM
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2001 Fairchild Semiconductor Corporation
Rev. H4

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