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FGS15N40L
September 2001
IGBT
FGS15N40L
General Description
Insulated Gate Bipolar Transistors(IGBTs) with trench gate structure have superior performance in conductance and switching to planar gate structure and also have wide noise immunity. These devices are well suitable for strobe application
Features
* High Input Impedance * High Peak Current Capability (130A) * Easy Gate Drive
Application
* Strobe Flash
C C
C
C G E
C
E
E
G E
8-SOP
Absolute Maximum Ratings
Symbol VCES VGES ICM (1) PC TJ Tstg TL
TC = 25C unless otherrwise noted
Description Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering PurPoses from case for 5 secnds
@ Ta = 25C
FGS15N40L 400 6 130 2.0 -40 to +150 -40 to +150 300
Units V V A W C C C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RJA Parameter Thermal Resistance, Junction-to-Ambient(PCB Mount) Typ. -Max. 62.5 Units C/W
Notes: Mounted on 1" square PCB(FR4 or G-10 Material)
(c)2001 Fairchild Semiconductor Corporation
FGS15N40L Rev. A1
FGS15N40L
Electrical Characteristics of IGBT T
Symbol Parameter
C
= 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES ICES IGES Collector-Emitter Breakdown Voltage Collector Cut-off Current G-E leakage Current VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 450 ------10 0.1 V A A
On Characteristics
VGE(th) VCE(sat) G-E threshold Voltage C-E Saturation Voltage IC = 0V, IC = 1mA IC = 130A , VGE = 4.0V 2.0 4.5 1.4 8.0 V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VGE = 0V , VCE = 30V f = 1MHz ---3800 45 30 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VCC = 300V , IC = 130A VGE = 4.0V , RG = 15 * Resistive Load ----0.15 1.5 0.15 1.5 --0.3 3.0 us us us us
Notes : Recommendation of Rg Value : Rg 15
(c)2001 Fairchild Semiconductor Corporation
FGS15N40L Rev. A1
FGS15N40L
7 180 Commom Emitter TC = 25 6V 5V 4V
Common Emitter VGE=4.0V
150
Collector-Emitter Voltage, Vce[v]
6
Collector Current, I C [A]
120 VGE = 3V 90
Ic=130A 5
4
Ic=100A
60
30
3
Ic=70A
0 0 2 4 6 8
2 -50 0 50 100 150
Collector-Emitter Voltage, VCE [V]
Case Temperature,TC []
Fig 1. Typical Output Chacracteristics
Fig 2. Saturation Voltage vs. Case Temerature at Variant Current Level
10
Common Emitter T C=-40
10
Common Emitter TC=25
Collector-Emitter Voltage, V [V] CE
Collector-Emitter Voltage, V CE [V]
8
8
6
6
4 100A 2 IC=70A
130A
130A 4 100A
2
IC=70A
0 0 1 2 3 4 5 6
0 0 1 2 3 4 5 6
Gate-Emitter Voltage ,VGE [V]
Gate-Emitter Voltage ,VGE [V]
Fig 3. Saturation Voltage vs. VGE
Fig 4. Saturation Voltage vs. VGE
10
10000
Common Emitter TC=150
Cies
Collector-Emitter Voltage, VCE [V]
8
1000 Common Emitter VGE=0V f=1MHz T C=25
6 130A 4 100A
Capacitance [pF]
100
Coes Cres
2
IC=70A
0 0 1 2 3 4 5 6
10 0 10 20 30 40
Gate-Emitter Voltage ,V GE [V]
Collector-Emitter Voltage,VCE [V]
Fig 5. Saturation Voltage vs. VGE
(c)2001 Fairchild Semiconductor Corporation
Fig 6. Capacitance Characteristics
FGS15N40L Rev. A1
FGS15N40L
200 180
Collector Peak Current, I CP [A]
160 140 120 100 80 60 40 20 0 0 2 4 6 8 10
Gate-Emitter Voltage,VGE [V]
Fig 7. Collector Current Limit Vs Gate - Emitter Voltage Limit
(c)2001 Fairchild Semiconductor Corporation
FGS15N40L Rev. A1
FGS15N40L
Package Dimension
8-SOP
MIN 1.55 0.20 0.061 0.008 0.1~0.25 0.004~0.001
#1
#8 4.92 0.20 0.194 0.008 5.13 MAX 0.202
( #4 #5 6.00 0.30 0.236 0.012
+0.10 0.15 -0.05 +0.004 0.006 -0.002
0.56 ) 0.022 1.80 MAX 0.071 MAX0.10 MAX0.004 3.95 0.20 0.156 0.008 5.72 0.225 0.50 0.20 0.020 0.008
0~ 8
Dimensions in Millimeters
(c)2001 Fairchild Semiconductor Corporation FGS15N40L Rev. A1
1.27 0.050
0.41 0.10 0.016 0.004
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FAST(R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R)
VCXTM
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2001 Fairchild Semiconductor Corporation
Rev. H4

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