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| FLM1314-8F X, Ku-Band Internally Matched FET FEATURES * * * * * * High Output Power: P1dB = 39.0dBm (Typ.) High Gain: G1dB = 6.0dB (Typ.) High PAE: add = 28% (Typ.) Low IM3 = -45dBc@Po = 28.0dBm Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50 DESCRIPTION The FLM1314-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25C Condition Rating 15 -5 45.5 -65 to +175 175 Unit V V W C C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with gate resistance of 100. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE: IA Symbol IDSS gm Vp VGSO P1dB G1dB Idsr add G IM3 Rth Tch f = 14.5GHz, f = 10 MHz 2-Tone Test Pout = 28.0dBm S.C.L. Channel to Case 10V x Idsr x Rth VDS =10V, IDS = 0.65 IDSS (Typ.), f = 13.75 ~ 14.5 GHz, ZS=ZL=50 ohm Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 2400mA VDS = 5V, IDS = 196mA IGS = -196A Min. -0.5 -5.0 38.5 5.0 -42 Limit Typ. Max. 3900 5900 3900 -1.5 39.0 6.0 -3.0 Unit mA mS V V dBm dB mA % dB dBc C/W C 2400 3000 28 -45 2.8 0.6 3.3 80 G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level Edition 1.1 August 2004 1 FLM1314-8F X, Ku-Band Internally Matched FET POWER DERATING CURVE 50 OUTPUT POWER & IM3 vs. INPUT POWER VDS = 10V f1 = 14.5 GHz f2 = 14.51 GHz 2-tone test Pout Total Power Dissipation (W) 40 Output Power (S.C.L.) (dBc) 32 30 28 26 24 22 30 -20 -30 IM3 20 -40 -50 10 0 50 100 150 200 18 20 22 24 26 28 Case Temperature (C) Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. FREQUENCY VDS = 10V P1dB 40 OUTPUT POWER vs. INPUT POWER VDS = 10V f = 14.125 GHz 40 Output Power (dBm) Output Power (dBm) Pin = 35dBm 31dBm Pout 38 36 34 add 38 32 30 20 10 34 27dBm 13.75 14.00 14.25 14.50 24 26 28 30 32 34 36 Frequency (GHz) Input Power (dBm) 2 add (%) 36 29dBm 30 IM3 (dBc) FLM1314-8F X, Ku-Band Internally Matched FET S11 S22 +j100 +j25 13.55 GHz 14.1 13.9 14.3 13.9 14.1 14.3 13.7 14.5 13.7 14.5 13.55 GHz 13.55 GHz 14.7 14.7 4 3 2 1 +j50 +90 S21 S12 +j10 +j250 13.7 13.9 0 10 14.7 14.5 14.7 14.1 14.5 14.3 14.3 13.9 13.55 GHz 13.7 180 0 SCALE FOR |S21| SCALE FOR |S12| 14.1 -j10 -j250 0.1 -j25 -j100 -j50 0.2 -90 FREQUENCY (MHZ) 13550 13600 13650 13700 13750 13800 13850 13900 13950 14000 14050 14100 14150 14200 14250 14300 14350 14400 14450 14500 14550 14600 14650 14700 S11 MAG .514 .493 .470 .443 .418 .393 .367 .339 .313 .290 .260 .232 .206 .184 .160 .148 .138 .139 .146 .165 .186 .213 .236 .262 ANG 64.8 59.1 53.7 48.0 41.5 35.1 29.6 22.7 15.0 7.7 -0.2 -9.4 -19.3 -31.9 -45.5 -62.2 -81.2 -98.7 -117.3 -133.8 -146.0 -156.8 -165.0 -172.3 S-PARAMETERS VDS = 10V, IDS = 2400mA S21 S12 MAG ANG MAG ANG 2.077 2.103 2.133 2.171 2.191 2.211 2.237 2.261 2.274 2.292 2.302 2.304 2.308 2.307 2.301 2.297 2.281 2.254 2.225 2.197 2.163 2.128 2.083 2.042 154.3 148.7 143.3 137.5 131.9 126.4 120.7 115.1 109.3 103.6 97.9 92.1 86.2 80.3 74.6 68.5 62.8 57.0 51.4 45.7 39.9 34.5 28.9 23.6 .075 .079 .083 .085 .088 .091 .093 .095 .093 .099 .098 .101 .102 .103 .104 .103 .106 .103 .104 .105 .105 .103 .100 .102 143.1 137.6 131.6 125.0 121.5 114.0 110.2 104.0 99.3 93.5 87.7 83.2 76.4 69.4 64.4 59.7 53.5 48.6 41.5 36.1 31.0 25.8 21.7 15.4 S22 MAG .350 .337 .330 .323 .314 .306 .301 .296 .294 .292 .286 .284 .282 .281 .284 .285 .285 .285 .288 .289 .286 .287 .292 .293 ANG 4.6 -2.7 -11.2 -19.0 -27.5 -36.2 -44.3 -52.8 -61.3 -69.1 -78.1 -86.2 -94.9 -103.8 -112.6 -120.6 -128.9 -137.1 -144.6 -151.9 -160.0 -166.3 -172.7 -179.0 3 FLM1314-8F X, Ku-Band Internally Matched FET Case Style "IA" Metal-Ceramic Hermetic Package 1.5 Min. (0.059) 1 2-R 1.250.15 (0.049) 0.1 (0.004) 4 2 3 0.5 (0.020) 1.5 Min. (0.059) 1.80.15 (0.071) 3.2 Max. (0.126) 8.1 (0.319) 0.2 Max. (0.008) 1.15 (0.045) 9.70.15 (0.382) 13.00.15 (0.512) 16.50.15 (0.650) 1. 2. 3. 4. Gate Source (Flange) Drain Source (Flange) Unit: mm(inches) For further information please contact: CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com * Do not put this product into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. (c) 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4 |
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