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| SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 JANUARY 1996 FEATURES * Gain of 50 at IC=100mA FMMTA55 - 2H FMMTA56 - 2G FMMTA55R - NB FMMTA56R - MB 7 FMMTA55 FMMTA56 C B E PARTMARKING DETAIL - ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg -60 -60 -80 -80 -4 -500 330 -55 to +150 SOT23 FMMTA55 FMMTA56 UNIT V V V mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). FMMTA55 PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Cut-Off Current Collector-Base Cut-Off Current SYMBOL V(BR)CEO V(BR)EBO ICES ICBO 50 50 -0.25 -1.2 100 100 MIN. -60 -4 -0.1 FMMTA56 MAX. UNIT V V -0.1 -0.1 50 50 -0.25 -1.2 V V MHz A A MAX. MIN. -80 -4 CONDITIONS. IC=-1mA, IB=0* IE=-100A, IC=0 VCE=-60V VCB=-80V, IE=0 VCB=-60V, IE=0 IC=-10mA, VCE=1V* IC=-100mA, VCE=1V* IC=-100mA, IB=-10mA* IC=-100mA, VCE=-1V* IC=-10mA, VCE=-2V f=100MHz -0.1 Static Forward hFE Current Transfer Ratio Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Transition Frequency VCE(sat) VBE(on) fT *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3 - 177 |
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