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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-08A Plastic-Encapsulate Transistors FMQT4292 TRANSISTOR WBFBP-08A (4x4x0.5) unit: mm DESCRIPTION PNP and NPN Epitaxial Silicon Transistor FEATURES Complementary Pair Tow A42-Type NPN, Tow A92-Type PNP Epitaxial Planar Die Construction 1 APPLICATION IDEAL FOR LOW POWER AMPLIFICATION AND SWITCHING For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: 4292 4292 A42 VCBO VCEO VEBO IC TJ, Tstg RJA RJC MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Junction and Storage Temperature Thermal Resistance, junction to Ambient Thermal Resistance, unction to Case Parameter Value 310 305 5 500 -55-150 200 83.3 Units V V V mA /mW /mW A92 VCBO VCEO VEBO IC TJ, Tstg RJA RJC MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Junction and Storage Temperature Thermal Resistance, junction to Ambient Thermal Resistance, unction to Case Parameter Value -300 -300 -5 -500 -55-150 200 83.3 Units V V V mA /mW /mW A42 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE(1) unless Test otherwise conditions specified) MIN 310 305 5 0.25 0.1 60 100 60 0.2 0.9 50 V V MHz 200 MAX UNIT V V V Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Ic= 100A, IE=0 Ic= 1 mA, IB=0 IE= 100A, IC=0 VCB=200V, IE=0 VEB= 5V, IC=0 VCE= 10V, IC= 1mA VCE= 10V, IC=10mA VCE=10V, IC=30mA IC=20 mA, IB= 2mA IC= 20 mA, IB=2mA VCE= 20V, IC= 10mA A A DC current gain HFE(2) HFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) fT f=30MHz A92 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE(1) unless Test otherwise specified) MIN -300 -300 -5 -0.25 -0.1 60 100 60 -0.2 -0.9 50 V V MHz 200 MAX UNIT V V V conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Ic= -100A, IE=0 Ic= -1mA, IB=0 IE= -100A, IC=0 VCB=-200V, IE=0 VEB= -5V, IC=0 VCE= -10V, IC= -1mA VCE= -10V, IC=-10mA VCE= -10V, IC=-30mA IC=-20 mA, IB= -2mA IC= -20 mA, IB= -2mA VCE=-20V, IC= -10mA A A DC current gain HFE(2) HFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) fT f=30MHz A42 A92 Symbol A A1 b D E D1 E1 D2 E2 e L k z Dimensions In Millimeters Min. Max. 0.450 0.550 0.000 0.100 0.350 0.450 3.900 4.100 3.900 4.100 1.120 REF. 1.120 REF. 0.900 REF. 0.900 REF. 1.000 TYP. 0.450 REF. 0.300 REF. 0.300 REF. Dimensions In Inches Min. Max. 0.018 0.022 0.000 0.004 0.014 0.018 0.154 0.161 0.154 0.161 0.044 REF. 0.044 REF. 0.035 REF. 0.035 REF. 0.040 TYP. 0.018 REF. 0.012 REF. 0.012 REF. |
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