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| FMY5 Transistor General purpose(dual transistors) FMY5 Features 1) Both the 2SA1514K and 2SC3906K chips in an SMT package. 2) PNP and NPN chips are connecter in a common emitter. External dimensions (Unit : mm) SMT5 2.9 1.9 0.95 0.95 (2) 1.6 2.8 1.1 0.8 (1) Circuit diagram (3) (4) (5) (5) (4) (3) 0.3 0.15 Each lead has same dimensions Tr2 Tr1 (2) (1) Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 120 120 5 50 300(TOTAL) 150 -55 to +150 Unit V V V mA mW C C 200mW per element must not be exceeded. PNP type negative symbols have been omitted. Package, marking, and packaging specifications Part No. Package Marking Code Basic ordering unit (pieces) FMY5 SMT5 Y5 T148 3000 0.3Min. Rev.B 1/4 FMY5 Transistor Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff curren DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 120 120 5 - - 180 - - - Typ. - - - - - - - 140 3/4 Max. - - - 0.5 0.5 820 0.5 - - Unit V V V A A - V MHz pF IC = 50/-50A IC = 1/-1mA IE = 50/-50A VCB = 100/-100V VEB = 4/-4V VCE = 6/-6V, IC = 2/-2mA IC = 10/-10mA, IB = 1/-1mA VCE = 12/-12V, IE = -2/2mA, f = 100MHz VCB = 12/-12V, IE = 0A, f = 1MHz Conditions Note:The slash denotes NPN/PNP. PNP type negative symbols have been omitted. Transition frequency of the device. Electrical characteristics curves Tr1 -10 Ta=25C -50 -25.0 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Ta=25C VCE= -6V Ta=25C -20.0 -10 -5 -2 -1 -0.5 -0.2 -0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 DC CURRENT GAIN : hFE -8 -22.5 -20 500 VCE= -1V -5V V -3 -17.5 -6 -15.0 200 -12.5 -4 -10.0 -7.5 100 -2 -5.0 -2.5A IB=0 50 0 -4 -8 -12 -16 -20 -0.2 -0.5 -1 -2 -5 -10 -20 -50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characteristics Fig.3 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Ta=25C -0.5 TRANSITION FREQUENCY : fT (MHZ) Ta=25C VCE= -6V 20 Ta=25C f=1MHZ IE=0A 500 10 -0.2 IC/IB=50/1 Cob 200 5 -0.1 20/1 10/1 100 2 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 50 0.5 1 2 5 10 20 50 1 -0.5 -1 -2 -5 -10 -20 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.4 Collector-Emitter saturation voltage vs. collector current Fig.5 Transition frequency vs. emitter current Fig.6 Collector output capacitance vs. collector-base voltage Rev.B 2/4 FMY5 Transistor 20 EMITTER INPUT CAPACITANCE : Cib (pF) Cib Ta=25C f=1MHZ IC=0A 10 5 2 1 -0.5 -1 -2 -5 -10 -20 EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Emitter input capacitance vs. emitter-base voltage Tr2 10 25.0 COLLECTOR CURRENT : IC (mA) 50 20 10 5 2 1 0.5 0.2 0.1 0 0.2 0.4 COLLECTOR CURRENT : IC (mA) 22.5 8 Ta=25C VCE=6V DC CURRENT GAIN : hFE Ta=25C 500 5V 3V 20.0 17.5 6 15.0 12.5 200 VCE=1V 4 10.0 7.5 100 2 5.0 2.5 50 0 IB=0A 4 8 12 Ta=25C 16 20 0.6 0.8 1.0 1.2 1.4 1.6 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) Fig.8 Ground emitter output characteristics Fig.9 Ground emitter propagation characteristics Fig.10 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) Ta=25C 0.5 IC/IB=10 TRANSITION FREQUENCY : fT (MHz) 0.5 VCE=6V Ta=25C 500 0.2 0.1 0.2 Ta=100C 0.1 200 100 IC/IB=50 25C -40C 0.05 20 10 0.05 50 -0.5 -1 -2 -5 -10 -20 -50 0.02 1 2 5 10 20 50 0.02 1 2 5 10 20 50 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IE (mA) Fig.11 Collector-emitter saturation voltage vs. collector current ( ) Fig.12 Collector-emitter saturation voltage vs. collector current ( ) Fig.13 Transition frequency vs. emitter current Rev.B 3/4 FMY5 Transistor COLLECTOR OUTPUT CAPACITANCE : Cob(pF) 20 10 Ta=25C f=1MHz IE=0A EMITTER INPUT CAPACITANCE : Cib(pF) 20 10 Ta=25C f=1MHz IC=0A 5 5 2 1 2 1 -0.5 1 2 5 10 20 -0.5 1 2 5 10 20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.14 Collector output capacitance vs. collector-base voltage Fig.15 Emitter input capacitance vs. emitter-base voltage Rev.B 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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