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FQB47P06/FQI47P06 60V P-Channel MOSFET
November 2006
FQB47P06 / FQI47P06
60V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. D
G
QFET
Features
* * * * * * * -47A, -60V, RDS(on) = 0.026 @VGS = -10 V Low gate charge ( typical 84 nC) Low Crss ( typical 320 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating
TM
tm
S
G
S
D2-PAK
FQB Series
GDS
I2-PAK
FQI Series
D
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed
(Note 1)
FQB47P06 / FQI47P06 -60 -47 -33.2 -188 25
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/C C C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25C) * Power Dissipation (TC = 25C)
820 -47 16 -7.0 3.75 160 1.06 -55 to +175 300
TJ, TSTG TL
- Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RJC RJA RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 0.94 40 62.5 Units C/W C/W C/W
* When mounted on the minimum pad size recommended (PCB Mount)
(c)2006 Fairchild Semiconductor Corporation FQB47P06/FQI47P06 Rev. A2 www.fairchildsemi.com
FQB47P06/FQI47P06 60V P-Channel MOSFET
Elerical Characteristics T
Symbol Parameter
C
= 25C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS BVDSS /TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -60 V, VGS = 0 V VDS = -48 V, TC = 150C VGS = -25 V, VDS = 0 V VGS = 25 V, VDS = 0 V -60 -------0.06 -------1 -10 -100 100 V V/C A A nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = -250 A VGS = -10 V, ID = -23.5 A VDS = -30 V, ID = -23.5 A
(Note 4)
-2.0 ---
-0.021 21
-4.0 0.026 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz ---2800 1300 320 3600 1700 420 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -48 V, ID = -47 A, VGS = -10 V
(Note 4, 5)
VDD = -30 V, ID = -23.5 A, RG = 25
(Note 4, 5)
--------
50 450 100 195 84 18 44
110 910 210 400 110 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -47 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -47 A, dIF / dt = 100 A/s
(Note 4)
------
---130 0.55
-47 -188 -4.0 ---
A A V ns C
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.43mH, IAS = -47A, VDD = -25V, RG = 25 , Starting TJ = 25C 3. ISD -47A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
FQB47P06/FQI47P06 Rev. A2
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FQB47P06/FQI47P06 60V P-Channel MOSFET
Typical Characteristics
VGS
10
2
Top :
-ID , Drain Current [A]
-ID, Drain Current [A]
- 15.0 V - 10.0 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V
10
2
10
1
175 C
o
10
1
10
0
25 C -55 C
* Notes : 1. VDS = -30V 2. 250s Pulse Test
o
o
10
0
* Notes : 1. 250s Pulse Test 2. TC = 25 C
o
10
-1
10
0
10
1
10
-1
2
4
6
8
10
-VDS, Drain-Source Voltage [V]
-VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.10
10
2
RDS(on) [], Drain-Source On-Resistance
0.08
0.06
VGS = - 10V
-IDR , Reverse Drain Current [A]
10
1
0.04
VGS = - 20V
10
0
0.02
* Note : TJ = 25 C
o
175 C
o
25 C
o
* Notes : 1. VGS = 0V 2. 250s Pulse Test
0.00
0
100
200
300
400
10
-1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
8000 7000 6000
12
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
-VGS, Gate-Source Voltage [V]
10
VDS = -30V
8
Capacitance [pF]
Coss
5000 4000 3000 2000 1000 0 -1 10
Ciss
VDS = -48V
* Notes : 1. VGS = 0 V 2. f = 1 MHz
6
Crss
4
2
* Note : ID = -47 A
10
0
10
1
0
0
10
20
30
40
50
60
70
80
90
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
FQB47P06/FQI47P06 Rev. A2
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FQB47P06/FQI47P06 60V P-Channel MOSFET
Typical Characteristics
(Continued)
1.2
2.5
-BVDSS, (Normalized) Drain-Source Breakdown Voltage
RDS(ON), (Normalized) Drain-Source On-Resistance
2.0
1.1
1.5
1.0
1.0
0.9
* Notes : 1. VGS = 0 V 2. ID = -250A
0.5
* Notes : 1. VGS = -10 V 2. ID = -23.5 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs. Temperature
Figure 8. On-Resistance Variation vs. Temperature
10
3
50
Operation in This Area is Limited by R DS(on)
-ID, Drain Current [A]
1 ms 10 ms
10
1
-ID, Drain Current [A]
10
2
100 s
40
30
DC
20
10
0
* Notes : o 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse
o
10
10
-1
10
0
10
1
10
2
0 25
50
75
100
125
o
150
175
-VDS, Drain-Source Voltage [V]
TC, Case Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
10
0
(t), Thermal Response
D = 0 .5
* N o te s :
0 .2
10
-1
1 . Z J C ( t) = 0 .9 4
o
C /W M a x .
2 . D u t y F a c to r , D = t 1 / t 2
0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
3 . T JM - T C = P D M * Z JC ( t)
PDM t1 t2
Z
JC
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
FQB47P06/FQI47P06 Rev. A2
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FQB47P06/FQI47P06 60V P-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQB47P06/FQI47P06 Rev. A2
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FQB47P06/FQI47P06 60V P-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+ V DUT I
DS
_
SD
L D r iv e r R
G
C o m p li m e n t o f D U T ( N - C h a n n e l)
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d
V GS ( D r iv e r )
G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d
10V
I SD (DUT )
B o d y D io d e R e v e r s e C u r r e n t
IR M
d i/ d t IF M , B o d y D io d e F o r w a r d C u r r e n t
V DS (DUT )
V
SD
B o d y D io d e F o r w a r d V o lt a g e D r o p B o d y D io d e R e c o v e r y d v / d t
V
DD
FQB47P06/FQI47P06 Rev. A2
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FQB47P06/FQI47P06 60V P-Channel MOSFET
Package Dimensions
D2PAK
(0.40) 9.90 0.20 4.50 0.20 1.30 -0.05
+0.10
1.20 0.20
9.20 0.20
15.30 0.30
1.40 0.20
2.00 0.10
0.10 0.15 2.40 0.20 2.54 0.30 9.20 0.20
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4.90 0.20
(0.75)
1.27 0.10 2.54 TYP
0.80 0.10 2.54 TYP 10.00 0.20 (8.00) (4.40)
0
~3
+0.10
0.50 -0.05
10.00 0.20 15.30 0.30
(1.75)
(2XR0.45)
0.80 0.10
FQB47P06/FQI47P06 Rev. A2
4.90 0.20
(7.20)
FQB47P06/FQI47P06 60V P-Channel MOSFET
Package Dimensions
(Continued)
I2PAK
9.90 0.20 (0.40) 4.50 0.20 1.30 -0.05
+0.10
1.20 0.20
9.20 0.20 MAX 3.00
(1.46)
13.08 0.20
(0.94)
1.27 0.10
1.47 0.10
0.80 0.10
10.08 0.20
MAX13.40
(4 5 )
2.54 TYP
2.54 TYP
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
FQB47P06/FQI47P06 Rev. A2
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FQB47P06/FQI47P06 60V P-Channel MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM UltraFET(R) VCXTM WireTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Advance Information
Product Status Formative or In Design First Production
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I21
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
FQB47P06/FQI47P06 Rev. A2
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