View FQN1N50C_1241687.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FQN1N50C 500V N-Channel MOSFET
QFET
FQN1N50C
500V N-Channel MOSFET
Features
* 0.38 A, 500 V, RDS(on) = 6.0 @ VGS = 10 V * Low gate charge ( typical 4.9 nC ) * Low Crss ( typical 4.1 pF) * Fast switching * 100 % avalanche tested * Improved dv/dt capability
January 2006 (R)
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
D
G
TO-92
GDS
FQN Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD Drain Current Drain Current
Parameter
Drain-Source Voltage - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
FQN1N50C
500 0.38 0.24 3.04 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units
V A A A V mJ A mJ V/ns W W W/C C C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25C) Power Dissipation (TL = 25C) - Derate above 25C
44.4 0.38 0.21 4.5 0.89 2.08 0.017 -55 to +150 300
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RJL RJA
Parameter
Thermal Resistance, Junction-to-Lead Thermal Resistance, Junction-to-Ambient
(Note 6a) (Note 6b)
Typ
---
Max
60 140
Units
C/W C/W
(c)2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQN1N50C Rev. A
FQN1N50C 500V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking 1N50C Device FQN1N50C Package TO-92 Reel Size -Tape Width -Quantity 2000ea
Electrical Characteristics
Symbol Off Characteristics BVDSS BVDSS/ TJ IDSS IGSSF IGSSR Parameter
TC = 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V
500 ------
-0.5 -----
--50 250 100 -100
V V/C A A nA nA
On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 0.19 A VDS = 40 V, ID = 0.19A
(Note 4)
2.0 ---
-4.6 0.6
4.0 6.0 --
V S
Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---150 28 4.1 195 40 -pF pF pF
Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 400 V, ID = 1.0 A, VGS = 10 V
(Note 4, 5) (Note 4, 5)
VDD = 250 V, ID = 1.0 A, RG = 25
--------
10 10 20 15 4.9 0.66 2.9
30 30 50 40 6.4 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 80mH, IAS = 1.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 0.38A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature 6. a) Reference point of the RJL is the drain lead b) When mounted on 3"x4.5" FR-4 PCB without any pad copper in a still air environment (RJA is the sum of the junction-to-case and case-to-ambient thermal resistance. RCA is determined by the user's board design)
Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 0.38 A VGS = 0 V, IS = 1.0 A, dIF / dt = 100 A/s
(Note 4)
------
---188 0.55
0.38 3.04 1.4 ---
A A V ns C
FQN1N50C Rev. A
2
www.fairchildsemi.com
FQN1N50C 500V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
10
0
ID, Drain Current [A]
ID, Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
10
0
150 C 25 C
o
o
10
-1
-55 C
o
10
-2
Notes : 1. 250 s Pulse Test 2. TC = 25
-1
Notes : 1. VDS = 40V 2. 250 s Pulse Test
10
10
0
10
1
10
-1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
20
RDS(ON) [ ], Drain-Source On-Resistance
15
VGS = 10V
10
IDR, Reverse Drain Current [A]
10
0
150
25
VGS = 20V
5
Note : TJ = 25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
400 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
12
VGS, Gate-Source Voltage [V]
10
VDS = 100V VDS = 250V VDS = 400V
300
Coss Ciss
* Note : 1. VGS = 0 V 2. f = 1 MHz
Capacitances [pF]
8
200
6
4
100
Crss
2
Note : ID = 1A
0 -1 10
10
0
10
1
0
0
1
2
3
4
5
6
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
FQN1N50C Rev. A
3
www.fairchildsemi.com
FQN1N50C 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 0.19 A
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
0.4
10
1
10 s
ID, Drain Current [A]
10
0
100 s
100 ms
10
-1
Operation in This Area is Limited by R DS(on)
ID, Drain Current [A]
10
3
1 ms 10 ms
0.3
0.2
DC
10
-2
Notes :
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
0.1
10
-3
10
0
10
1
10
2
0.0 25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature []
Figure 11. Transient Thermal Response Curve
10
2
D = 0 .5
Z JC Thermal Response (t),
10
1
0 .2 0 .1 0 .0 5
PDM t1 t2
10
0
0 .0 2 0 .0 1
s in g le p u ls e
10
-1
N o te s : 1 . Z J L (t) = 6 0 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T L = P D M * Z q J C (t)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
FQN1N50C Rev. A
4
www.fairchildsemi.com
FQN1N50C 500V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQN1N50C Rev. A
5
www.fairchildsemi.com
FQN1N50C 500V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQN1N50C Rev. A
6
www.fairchildsemi.com
FQN1N50C 500V N-Channel MOSFET
Mechanical Dimensions
TO-92
4.58 -0.15
+0.25
0.46
14.47 0.40
0.10
4.58 0.20
1.27TYP [1.27 0.20] 3.60
0.20
1.27TYP [1.27 0.20]
0.38 -0.05
+0.10
3.86MAX
1.02 0.10
0.38 -0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
FQN1N50C Rev. A
7
www.fairchildsemi.com
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM
DISCLAIMER
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM
PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3
SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I18

▲Up To Search▲

Price & Availability of FQN1N50C

	To Download FQN1N50C Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .