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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-02L Plastic-Encapsulate Diodes FRB751 Schottky barrier Diodes WBFBP-02L (0.8x0.6x0.45) unit: mm DESCRIPTION Silicon epitaxial planar FEATURES Small surface mounting type Low reverse current and low forward voltage High reliability APPLICATION High speed switching For Detection For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: 5 1 5 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature Symbol VRM VR IO IFSM Tj Tstg Limits 40 30 30 150 125 -40~125 Unit V V mA mA Electrical Ratings @TA=25 Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR CT 2 Min. Typ. Max. 0.37 0.5 Unit V A pF Conditions IF=1mA VR=30V VR=1V,f=1MHZ Typical Characteristics Sym bol D E D1 E1 b H k L1 L2 D im e n s io n s In M illim e t e r s M in . M ax. 0 .7 5 0 0 .8 5 0 0 .5 5 0 0 .6 5 0 0 .2 2 0 0 .3 2 0 0 .4 0 0 0 .5 0 0 0 .3 0 0 R E F . 0 .4 4 0 0 .5 4 0 0 .2 8 R E F . 0 .1 0 0 0 .2 0 0 0 .0 5 0 R E F . D im e n s io n s In In c h e s M in . M ax. 0 .0 3 0 0 .0 3 4 0 .0 2 2 0 .0 2 6 0 .0 0 9 0 .0 1 3 0 .0 1 6 0 .0 2 0 0 .0 1 2 R E F . 0 .0 1 7 0 .0 2 1 0 .0 1 1 R E F . 0 .0 0 4 0 .0 0 8 0 .0 0 2 R E F . |
Price & Availability of FRB751-WBFBP-02L
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