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| Ordering number : ENN7922 FW341 N-Channel and P-Channel Silicon MOSFETs FW341 Features * * * General-Purpose Switching Device Applications * * Low ON-resistance. Ultrahigh-speed switching. Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage contained in a single package. High-density mounting. Best suited for motor drive application. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW10s) Drain Current (PW100ms) Drain Current (PW10s) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID ID IDP PD PT Tch Tstg duty cycle1% duty cycle1% duty cycle1% Mounted on a ceramic board (2000mm2!0.8mm)1unit Mounted on a ceramic board (2000mm2!0.8mm) Conditions N-channel 30 20 3.5 4 6 14 1.4 1.7 150 --55 to +150 P-channel --30 20 --2.5 --3 --4.5 --10 Unit V V A A A A W W C C Electrical Characteristics at Ta=25C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=3.5A ID=3.5A, VGS=10V ID=1.8A, VGS=4V 1.2 3.0 5.3 64 105 84 150 30 1 10 2.6 V A A V S m m Symbol Conditions Ratings min typ max Unit Marking : W341 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2004 TS IM TA-100623 No.7922-1/6 FW341 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=-1mA, VGS=0 VDS=-30V, VGS=0 VGS=16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=-2.5A ID=-2.5A, VGS=-10V ID=-1A, VGS=-4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=-10V, VGS=--10V, ID=-2.5A VDS=-10V, VGS=--10V, ID=-2.5A VDS=-10V, VGS=--10V, ID=-2.5A IS=--2.5A, VGS=0 --30 --1 10 --1.2 2 3 110 240 200 47 32 7 3.5 20 8 5.5 0.98 0.82 -0.87 --1.5 145 340 --2.6 V A A V S m m pF pF pF ns ns ns ns nC nC nC V Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=3.5A VDS=10V, VGS=10V, ID=3.5A VDS=10V, VGS=10V, ID=3.5A IS=3.5A, VGS=0 Ratings min typ 180 42 25 7 15 19 5 5.0 0.9 0.6 0.88 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm 2129 8 5 0.3 Electrical Connection 8 7 6 5 1.8max 1 5.0 4 0.2 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 2 3 4 4.4 6.0 Top view 0.595 1.27 0.43 0.1 1.5 No.7922-2/6 FW341 Switching Time Test Circuit [N-channel] VIN 10V 0V VIN ID=3.5A RL=4.3 VDD=15V 0V --10V VIN ID= --2.5A RL=6 [P-channel] VIN VDD= --15V D PW=10s D.C.1% VOUT PW=10s D.C.1% D VOUT G G FW341 P.G 50 FW341 P.G 50 S S 7 ID -- VDS 4V 5V [Nch] 3.5 ID -- VGS Ta=--2 5 C 75C 25C 3.0 [Nch] VDS=10V 6 3.0 8V 6V Drain Current, ID -- A 5 Drain Current, ID -- A 2.5 10V 4 V GS=3V 2.0 3 1.5 2 1.0 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.5 0 0 0.5 1.0 1.5 2.0 --25 2.5 Ta=7 5C C 25C 3.5 4.0 Drain-to-Source Voltage, VDS -- V 300 IT06650 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 200 IT06651 [Nch] Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m RDS(on) -- Ta [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- m 250 150 200 150 100 I D= , VG 1.8A 4V S= 100 ID=1.8A 3.5A .5A, I D=3 50 =10V VGS 50 0 2 3 4 5 6 7 8 9 10 IT06652 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- C IT06653 No.7922-3/6 FW341 10 yfs -- ID [Nch] VDS=10V Forward Transfer Admittance, yfs -- S 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 IF -- VSD [Nch] VGS=0 1.0 7 5 3 2 = Ta --2 5 C C 75 Forward Current, IF -- A C 25 Ta=7 5C 25C 0.3 0.4 0.5 0.6 0.1 7 5 3 2 0.1 0.01 2 3 57 0.1 2 3 57 1.0 2 3 Drain Current, ID -- A 100 7 57 10 IT06654 0.01 0.2 0.7 --25C 0.8 0.9 1.0 1.1 1.2 SW Time -- ID [Nch] VDD=15V VGS=10V Ciss, Coss, Crss -- pF 1000 7 5 3 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V IT06655 [Nch] f=1MHz Switching Time, SW Time -- ns 5 3 2 td(off) Ciss 10 7 5 3 2 1.0 0.1 td(on) 100 7 5 3 2 tf tr Coss Crss 10 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 10 9 10 IT06656 7 0 5 10 15 20 25 30 IT06657 Drain-to-Source Voltage, VDS -- V 3 2 10 7 5 VGS -- Qg VDS=10V ID=3.5A [Nch] ASO IDP=14A ID=3.5A [Nch] <10s 10 0 s 1m s Gate-to-Source Voltage, VGS -- V 8 Drain Current, ID -- A 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 IT06658 3 2 1.0 7 5 3 2 0.1 7 5 3 2 10 0m 10 DC s ms 10 op era tio Operation in this area is limited by RDS(on). n s 0.01 0.1 Ta=25C Single pulse Mounted on a ceramic board (2000mm2! 0.8mm)1unit 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Total Gate Charge, Qg -- nC --10. 0V --2.0 ID -- VDS --6.0 V 0V --4. Drain-to-Source Voltage, VDS -- V --5.0 IT06659 [Pch] ID -- VGS [Pch] VDS=10V --4.5 --4.0 --1.6 Drain Current, ID -- A . --3 --1.2 5V Drain Current, ID -- A --3.5 --3.0 --2.5 --2.0 --0.8 VGS= --3.0V --0.4 --1.0 --0.5 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 25 --3.0 --3.5 5C C --25 C --1.5 Ta= 7 --4.0 --4.5 Drain-to-Source Voltage, VDS -- V IT03212 Gate-to-Source Voltage, VGS -- V IT03213 No.7922-4/6 FW341 500 RDS(on) -- VGS [Pch]] Ta=25C 400 RDS(on) -- Ta [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 450 400 350 300 250 200 150 100 50 --2 350 300 250 200 150 100 50 0 --60 I D= A, --1.0 V = --4 VGS --2.5A ID= --1.0A .5 I D= --2 = --10V A, V GS --3 --4 --5 --6 --7 --8 --9 --10 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 10 yfs -- ID IT07523 Ambient Temperature, Ta -- C --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 IT07524 [Pch] VDS= --10V IF -- VSD Forward Transfer Admittance, yfs -- S 7 5 3 2 [Pch] VGS=0 C 25 1.0 7 5 3 2 = Ta 5C --2 C 75 Forward Current, IF -- A C --0.3 --0.4 --0.5 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 2 100 5 7 --10 IT03216 --0.01 --0.2 Ta=7 5 --0.6 25C --25C --0.7 --0.8 --0.9 --1.0 --1.1 --1.2 SW Time -- ID [Pch] 3 2 Ciss, Coss, Crss -- VDS Ciss Diode Forward Voltage, VSD -- V IT03217 [Pch] f=1MHz VDD= --15V VGS= --10V Switching Time, SW Time -- ns 7 Ciss, Coss, Crss -- pF 5 3 2 10 7 5 3 2 1.0 --0.1 100 7 5 td(off) td(on) tf Coss 3 2 Crss tr 10 2 3 5 7 --1.0 2 3 5 IT03218 0 --5 --10 --15 --20 --25 --30 IT03219 Drain Current, ID -- A --10 --9 Drain-to-Source Voltage, VDS -- V 2 --10 7 5 VGS -- Qg [Pch] ASO IDP= --10A ID= --2.5A [Pch] <10s Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --2.5A --8 --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 6 IT03220 10 Drain Current, ID -- A 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 1m 10 DC 0 s 0m er 10 s m op s on s ati 10 s Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board (2000mm2!0.8mm) 1unit 5 7 --0.1 23 5 7 --1.0 23 5 7 --10 23 5 --0.01 --0.01 2 3 Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V IT07525 No.7922-5/6 FW341 2.0 PD -- Ta [Pch, Nch] Mounted on a ceramic board (2000mm2 ! 0.8mm) Allowable Power Dissipation, PD -- W 1.7 1.5 1.4 To t 1.0 al Di ss 1u 1u niitt n 0.5 ip ati on 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT07526 Note on usage : Since the FW341 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2004. Specifications and information herein are subject to change without notice. PS No.7922-6/6 |
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