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| GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications * * * The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) * High speed: tf = 0.05 s (typ.) * Low switching loss: Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ (typ.) * * Low saturation Voltage: VCE (sat) = 2.0 V (typ.) FRD included between emitter and collector Unit: mm Maximum Ratings (Ta = 25C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg Rating 600 20 50 100 50 100 240 150 -55 to 150 Unit V V A JEDEC JEITA TOSHIBA 2-21F2C A W C C Weight: 9.75 g Thermal Characteristics Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c) Rth (j-c) Max 0.521 2.30 Unit C/W C/W Equivalent Circuit Collector Gate Emitter 1 GT50J325 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Turn-on switching loss Turn-off switching loss Symbol IGES ICES VGE (OFF) VCE (sat) Cies td (on) tr ton td (off) tf toff Eon Eoff VF trr IF = 50 A, VGE = 0 IF = 50 A, di/dt = -100 A/ms Inductive load VCC = 300 V, IC = 50 A VGG = +15 V, RG = 13 W (Note 1) (Note 2) Test Condition VGE = 20 V, VCE = 0 VCE = 600 V, VGE = 0 IC = 5 mA, VCE = 5 V IC = 50 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Min 3/4 3/4 3.5 3/4 3/4 Typ. 3/4 3/4 3/4 2.0 7900 0.09 0.07 0.24 0.30 0.05 0.43 1.30 1.34 3/4 65 Max 500 1.0 6.5 2.45 3/4 Unit nA mA V V pF 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 ms 3/4 3/4 3/4 3/4 Switching loss mJ 3/4 4.2 3/4 V ns Peak forward voltage Reverse recovery time Note 1: Switching time measurement circuit and input/output waveforms VGE 0 -VGE IC RG VCE 0 VCE 10% td (off) tf toff 10% 10% td (on) tr ton 10% L VCC IC 90% 90% 90% 10% Note 2: Switching loss measurement waveforms VGE 0 90% 10% IC VCE Eoff Eon 5% 0 2 GT50J325 IC - VCE 100 Common emitter Tc = 25C 20 15 10 20 VCE - VGE Common emitter Tc = -40C (A) 80 (V) Collector-emitter voltage VCE 16 12 IC Collector current 60 40 8 8 100 30 50 20 VGE = 7 V 0 0 4 IC = 10 A 1 2 3 4 5 0 0 4 8 12 16 20 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE - VGE 20 Common emitter Tc = 25C 20 VCE - VGE Common emitter Tc = 125C (V) 16 (V) 16 12 VCE Collector-emitter voltage Collector-emitter voltage VCE 12 8 100 30 50 8 30 4 IC = 10 A 100 50 4 IC = 10 A 0 0 4 8 12 16 20 0 0 4 8 12 16 20 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC - VGE 100 Common emitter VCE = 5 V 5 Common emitter VGE = 15 V VCE (sat) - Tc (A) 80 Collector-emitter saturation voltage VCE (sat) (V) 4 100 70 IC 60 3 50 2 30 IC = 10 A 1 Collector current 40 20 Tc = 125C 25 0 0 4 8 12 16 20 -40 0 -60 -20 20 60 100 140 Gate-emitter voltage VGE (V) Case temperature Tc (C) 3 GT50J325 Switching time ton, tr, td (on) - RG 10 Common emitter VCC = 300 V VGG = 15 V 3 IC = 50 A : Tc = 25C : Tc = 125C 1 (Note 1) ton 10 Switching time ton, tr, td (on) - IC Common emitter VCC = 300 V VGG = 15 V RG = 13 W : Tc = 25C : Tc = 125C (Note 1) (ms) (ms) 3 ton, tr, td (on) ton, tr, td (on) Switching time 1 0.3 0.3 ton 0.1 td (on) 0.03 tr Switching time 0.1 td (on) 0.03 tr 0.01 1 3 10 30 100 300 1000 0.01 0 10 20 30 40 50 Gate resistance RG (9) Collector current IC (A) Switching time toff, tf, td (off) - RG 10 Common emitter VCC = 300 V VGG = 15 V 3 IC = 50 A : Tc = 25C : Tc = 125C (Note 1) 1 toff 0.3 td (off) 0.1 tf 10 Switching time toff, tf, td (off) - IC Common emitter VCC = 300 V VGG = 15 V 3 RG = 13 W : Tc = 25C : Tc = 125C (Note 1) 1 toff 0.3 td (off) (ms) toff, tf, td (off) Switching time Switching time toff, tf, td (off) (ms) 0.1 tf 0.03 0.03 0.01 1 3 10 30 100 300 1000 0.01 0 10 20 30 40 50 Gate resistance RG (9) Collector current IC (A) Switching loss 30 Common emitter VCC = 300 V VGG = 15 V 10 IC = 50 A : Tc = 25C : Tc = 125C (Note 2) 3 Eon Eon, Eoff - RG 10 Switching loss Common emitter VCC = 300 V VGG = 15 V RG = 13 W : Tc = 25C 3 : Tc = 125C (Note 2) Eon, Eoff - IC (mJ) Eon, Eoff Eon, Eoff (mJ) Eon 1 Switching loss 1 Eoff Switching loss Eoff 0.3 0.3 0.1 1 3 10 30 100 300 1000 0.1 0 10 20 30 40 50 Gate resistance RG (W) Collector current IC (A) 4 GT50J325 C - VCE 30000 10000 Cies 500 Common emitter RL = 6 W Tc = 25C VCE, VGE - QG 20 (V) 400 16 (pF) VCE 3000 1000 300 Coes 100 30 10 0.1 Common emitter VGE = 0 f = 1 MHz Tc = 25C 0.3 1 3 10 30 Cres Collector-emitter voltage Capacitance C 300 300 200 200 100 VCE = 100 V 12 8 4 100 300 1000 0 0 100 200 300 0 400 Collector-emitter voltage VCE (V) Gate charge QG (nC) IF - VF 100 Common collector VGE = 0 100 Common collector di/dt = -100 A/ms VGE = 0 : Tc = 25C : Tc = 125C trr, Irr - IF 10000 (A) 80 30 3000 (A) Reverse recovery current Irr Forward current IF 10 60 Tc = 125C 40 3 trr 300 -40 1 100 20 25 0.3 30 0 0 1 2 3 4 5 0.1 0 10 20 30 40 10 50 Forward voltage VF (V) Forward current IF (A) Safe operating area 300 100 IC max (pulse)* IC max (continuous) 300 100 Reverse bias SOA 50 ms* (A) (A) 30 10 3 *: Single pulse 1 0.3 0.1 1 Tc = 25C Curves must be derated linearly with increase in temperature. 3 10 30 100 DC operation Collector current IC 100 ms* 30 10 3 1 0.3 0.1 1 Tj < 125C = VGE = 15 V RG = 13 W 3 10 30 100 300 1000 Collector current IC 1 ms* 10 ms* 300 1000 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 5 Reverse recovery time Irr 1000 trr (ns) Gate-emitter voltage VGE (V) GT50J325 (C/W) 10 2 Tc = 25C 1 rth (t) - tw 10 rth (t) FRD 10 0 IGBT Transient thermal resistance 10 -1 10 -2 10 -3 10 -4 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 Pulse width tw (s) 6 GT50J325 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 7 |
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