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Bulletin PD -2.399 rev. A 11/00 HFA04TB60 HEXFRED Features * * * * * Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 1 CATHODE TM Ultrafast, Soft Recovery Diode BASE CATHODE VR = 600V VF = 1.8V 4 2 Qrr * = 40nC 3 ANODE 2 Benefits * Reduced RFI and EMI * Reduced Power Loss in Diode and Switching Transistor * Higher Frequency Operation * Reduced Snubbing * Reduced Parts Count di(rec)M/dt * = 280A/s * 125C Description International Rectifier's HFA04TB60 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 volts and 8 amps per Leg continuous current, the HFA04TB60 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA04TB60 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. TO-220AC Absolute Maximum Ratings Parameter VR IF @ TC = 100C IFSM IFRM PD @ TC = 25C PD @ TC = 100C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Single Pulse Forward Current Maximum Repetitive Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max 600 4.0 25 16 25 10 -55 to +150 Units V A W C 1 HFA04TB60 Bulletin PD-2.399 rev. A 11/00 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V BR VFM IRM CT LS Cathode Anode Breakdown Voltage Max Forward Voltage Max Reverse Leakage Current Junction Capacitance Series Inductance Min Typ Max Units 600 1.5 1.8 1.4 0.17 44 4.0 8.0 1.8 2.2 1.7 3.0 300 8.0 V V A pF nH Test Conditions IR = 100A IF = 4.0A See Fig. 1 IF = 8.0A IF = 4.0A, TJ = 125C See Fig. 2 VR = VR Rated TJ = 125C, VR = 0.8 x VR RatedD Rated See Fig. 3 VR = 200V Measured lead to lead 5mm from package body Dynamic Recovery Characteristics @ TJ = 25C (unless otherwise specified) Parameter trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 di(rec)M/dt1 di(rec)M/dt2 Reverse Recovery Time See Fig. 5, 6 & 16 Peak Recovery Current See Fig. 7& 8 Reverse Recovery Charge See Fig. 9 & 10 Peak Rate of Fall of Recovery Current During tb See Fig. 11 & 12 Min Typ Max Units 17 28 38 2.9 3.7 40 70 280 235 42 57 5.2 6.7 60 105 ns A nC A/s Test Conditions IF = 1.0A, dif/dt = 200A/s, VR = 30V TJ = 25C TJ = 125C IF = 4.0A TJ = 25C TJ = 125C VR = 200V TJ = 25C TJ = 125C dif/dt = 200A/s TJ = 25C TJ = 125C Thermal - Mechanical Characteristics Parameter Tlead! RthJC RthA" RthS# Wt T Lead Temperature Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Case to Heat Sink Weight Mounting Torque 6.0 5.0 Min Typ Max 300 5.0 80 Units C K/W g (oz) Kg-cm lbf*in 0.5 2.0 0.07 12 10 ! " # 0.063 in. from Case (1.6mm) for 10 sec Typical Socket Mount Mounting Surface, Flat, Smooth and Greased 2 www.irf.com HFA04TB60 Bulletin PD-2.399 rev. A 11/00 100 1000 Reverse Current - IR (A) 100 10 1 0.1 0.01 0.001 0 TJ = 150C TJ = 125C Instantaneous Forward Current - IF (A) 10 TJ = 150C TJ = 125C T = 25C J T = 25C J 100 200 300 400 500 Reverse Voltage - V R (V) 1 Fig. 2 - Typical Reverse Current vs. Reverse Voltage 100 A Junction Capacitance -CT (pF) T = 25C J 10 0.1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Forward Forward Voltage Drop - V FM ((V) ) V FM V Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current, 1 1 10 100 1000 Reverse Voltage - V R (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 Thermal Response (Z thJC ) D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics www.irf.com 3 HFA04TB60 Bulletin PD-2.399 rev. A 11/00 50 14 VR = 200V TJ = 125C TJ = 25C 45 I F = 8.0A I F = 4.0A 12 10 40 I F = 8.0A I F = 4.0A trr- (nC) 35 Irr- ( A) 8 6 30 4 25 VR = 200V TJ = 125C TJ = 25C 20 100 2 di f /dt - (A/s) 1000 0 100 di f /dt - (A/s) 1000 Fig. 5 - Typical Reverse Recovery vs. dif/dt 200 VR = 200V TJ = 125C TJ = 25C 160 Fig. 6 - Typical Recovery Current vs. dif/dt 1000 VR = 200V TJ = 125C TJ = 25C I F = 8.0A I F = 8.0A di (rec) M/dt- (A /s) 120 I F = 4.0A I F = 4.0A Qrr- (nC) 80 40 0 100 di f /dt - (A/s) 1000 100 100 A di f /dt - (A/s) 1000 Fig. 7 - Typical Stored Charge vs. dif/dt Fig. 8 - Typical di(rec)M/dt vs. dif/dt, 4 www.irf.com HFA04TB60 Bulletin PD-2.399 rev. A 11/00 3 IF trr ta tb 4 REVERSE RECOVERY CIRCUIT VR = 200V 0 Q rr 2 I RRM 0.5 I RRM di(rec)M/dt 5 0.01 L = 70H D.U.T. dif/dt ADJUST D G IRFP250 S 1 0.75 I RRM di f /dt 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr 1. dif/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current Fig. 9 - Reverse Recovery Parameter Test Circuit Fig. 10 - Reverse Recovery Waveform and Definitions www.irf.com 5 HFA04TB60 Bulletin PD-2.399 rev. A 11/00 Conforms to JEDEC Outline TO-220AC Dimensions in millimeters and inches WORLD HEADQUARTERS: EUROPEAN HEADQUARTERS: IR CANADA: IR GERMANY: IR ITALY: IR FAR EAST: IR SOUTHEAST ASIA: IR TAIWAN: http://www.irf.com 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332. Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408. 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801. Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933. Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220. K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086. 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630. 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936. Data and specifications subject to change without notice. Fax-On-Demand: +44 1883 733420 6 www.irf.com |
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