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| PD - 93930E IRF6100 HEXFET(R) Power MOSFET l l l l l l Ultra Low RDS(on) per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel VDSS -20V RDS(on) max 0.065@VGS = -4.5V 0.095@VGS = -2.5V ID -5.1A -4.1A Description True chip-scale packaging is available from International Rectifier. Through the use of advanced processing techniques, and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications. These benefits, combined with the ruggedized device design , that International Rectifier is well known for, provides the designer with an ex- D G S FlipFET ISOMETRIC tremely efficient and reliable device. The FlipFETTM package, is one-third the footprint of a comparable SOT-23 package and has a profile of less than .8mm. Combined with the low thermal resistance of the die level device, this makes the FlipFETTM the best device for application where printed circuit board space is at a premium and in extremely thin application environments such as battery packs, cell phones and PCMCIA cards. Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -20 5.1 3.5 35 2.2 1.4 17 12 -55 to + 150 Units V A W mW/C V C Thermal Resistance Symbol RJA RJ-PCB Parameter Junction-to-Ambient Junction-to-PCB mounted Typ. 35 Max. 56.5 --- Units C/W www.irf.com 1 5/2/05 IRF6100 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -20 --- --- -0.45 9.8 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = -250A -0.010 --- V/C Reference to 25C, ID = -1mA --- 0.065 VGS = -4.5V, ID = -5.1A --- 0.095 VGS = -2.5V, ID = -4.1A --- -1.2 V VDS = VGS, ID = -250A --- --- S VDS = -10V, ID = -5.1A --- -1.0 VDS = -20V, VGS = 0V A --- -25 VDS = -16V, VGS = 0V, TJ = 125C --- 100 VGS = 12V nA --- -100 VGS = -12V 14 21 ID = -5.1A 1.9 2.9 nC VDS = -16V 5.0 7.5 VGS = -5.0V 12 --- VDD = -10V 12 --- ID = -1.0A ns 50 --- RG = 5.8 50 --- VGS = -4.5V 1230 --- VGS = 0V 250 --- pF VDS = -15V 180 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- 48 34 -2.2 A -33 -1.2 72 51 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.2A, VGS = 0V TJ = 25C, IF = -2.2A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. When mounted on 1 inch square 2oz copper on FR-4. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF6100 100 VGS -7.00V -5.00V -4.50V -2.50V -1.80V -1.50V -1.20V BOTTOM -1.00V TOP 100 -I D , Drain-to-Source Current (A) 10 -I D , Drain-to-Source Current (A) 10 VGS -7.00V -5.00V -4.50V -2.50V -1.80V -1.50V -1.20V BOTTOM -1.00V TOP 1 -1.00V 0.1 1 -1.00V 0.01 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 0.1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 TJ = 25 C RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -5.1A -I D , Drain-to-Source Current (A) 1.5 TJ = 150 C 10 1.0 0.5 1 1.0 V DS = -15V 20s PULSE WIDTH 1.5 2.0 2.5 3.0 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF6100 2000 1600 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10 ID = -5.1A VDS =-16V 8 C, Capacitance (pF) Ciss 1200 6 800 4 400 Coss Crss 1 10 100 2 0 0 0 4 8 12 16 20 24 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 TJ = 150 C -ID , Drain Current (A) I 100 10us 10 100us 1ms 1 10ms 1 TJ = 25 C 0.1 0.0 V GS = 0 V 0.4 0.8 1.2 1.6 2.0 2.4 0.1 0.1 TA = 25 C TJ = 150 C Single Pulse 1 10 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF6100 6.0 VDS 5.0 RD VGS RG VGS Pulse Width 1 s Duty Factor 0.1 % -ID , Drain Current (A) D.U.T. + 4.0 3.0 2.0 Fig 10a. Switching Time Test Circuit 1.0 td(on) tr t d(off) tf 0.0 VGS 25 50 75 100 125 150 10% TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 90% VDS Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 10 0.1 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com - VDD 5 IRF6100 RDS(on) , Drain-to -Source On Resistance ( ) RDS (on) , Drain-to-Source On Resistance ( ) 0.08 0.16 0.07 0.12 0.06 0.05 ID = -5.1A 0.04 0.08 VGS = -2.5V VGS = -4.5V 0.04 0 10 20 30 40 -I D , Drain Current (A) 0.03 1.0 2.0 3.0 4.0 5.0 6.0 7.0 -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG QGS VG QGD 12V .2F .3F VGS -3mA Charge IG ID Current Sampling Resistors Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com + D.U.T. - VDS IRF6100 1.1 20 -V GS(th) Gate threshold Voltage (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 -75 -50 -25 0 25 50 75 100 125 150 16 Power Dissipation (W) ID = -250A 12 8 4 0 0.001 0.010 0.100 1.000 10.000 T J , Temperature ( C ) Pulsewidth (sec) Fig 15. Threshold Voltage Vs. Temperature Fig 16. Maximum Power Dissipation Vs. Time www.irf.com 7 IRF6100 FlipFET 2X B Outline Dimension and Tape and Reel 0.280 [.0110] 0.240 [.0094] 0.05 [.002] C A C 3 0.10 [.004] C 2X BALL ASS IGNMENTS 1= 2= 3= 4= SOURCE DRAIN DRAIN GAT E 1.524 [.060] 0.10 [.004] C 4 4X 0.400 [.016] 1.524 [.060] 1 2 0.800 [.032] 2X 0.388 [.0153] 4X O 0.338 [.0133] 0.15 [.006] 0.08 [.003] CAB C 0.537 [.0211] 0.507 [.0199] 0.812 [.032] 0.752 [.029] 0.20 [.008] C IRF 6100 F001 2301 NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ]. O 13" 8mm A1 BALL LOCAT ION 8mm 0.800 [.032] S ource Ball 1 Drain Ball 2 4mm FEED DIRECT ION Gate Ball 4 Drain Ball 3 0.800 [.032] NOT ES : 1. T APE AND REEL OUT LINE CONFORMS T O EIA-481 & EIA-541. Tape and Reel 4X O 0.25 [.010] Recommended Footprint Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/05 8 www.irf.com |
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