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IRFN340SMD
MECHANICAL DATA Dimensions in mm (inches)
N-CHANNEL POWER MOSFET
3 .6 0 (0 .1 4 2 ) M ax.
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 )
1
3
BVDSS ID(cont) RDS(on)
FEATURES
400V 10A W 0.55W
0 .7 6 (0 .0 3 0 ) m in .
1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 )
1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
2
* HERMETICALLY SEALED SURFACE MOUNT PACKAGE * SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE. * SIMPLE DRIVE REQUIREMENTS
9 .6 9 .3 1 1 .5 1 1 .2
7 (0 8 (0 8 (0 8 (0
.3 8 .3 6 .4 5 .4 4
1)
9) 6) 4)
0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 )
* LIGHTWEIGHT * HIGH PACKING DENSITIES
SMD1 PACKAGE
Pad 1 - Source Pad 2 - Drain Pad 3 - Gate
Note: IRFxxxSM also available with pins 1 and 3 reversed.
20V 10A 6A 40A 125W 1.0W/C 650mJ 10A 12.5mJ 4.0V/ns -55 to 150C 300C 1.0C/W TBD
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
VGS ID ID IDM PD EAS IAR EAR dv/dt TJ , Tstg TL RqJC RqJ-PCB
Notes 1) 2) 2) 3) 4)
Gate - Source Voltage Continuous Drain Current (VGS = 0 , Tcase = 25C) Continuous Drain Current (VGS = 0 , Tcase = 100C) 1 Pulsed Drain Current Power Dissipation @ Tcase = 25C Linear Derating Factor Single Pulse Avalanche Energy 2 Avalanche Energy 1 Repetitive Avalanche Energy 1 Peak Diode Recovery 3 Operating and Storage Temperature Range Package Mounting Surface Temperature (for 5 sec) Thermal Resistance Junction to Case Thermal Resistance Junction to PCB (Typical)
Repetitive Rating - Pulse width limited by maximum junction temperature. @ VDD = 50V,Starting TJ = 25C, EAS =[0.5 * L* (IL2) * [BVDSS/(BVDSS-VDD)], Peak IL = 10A VGS = 10V, 25 RG 200W ISD 10A , di/dt 120A/ms , VDD BVDSS , TJ 150C Pulse Test: Pulse Width 300ms, d 2%
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 7/00
Semelab plc.
IRFN340SMD
ELECTRICAL CHARACTERISTICS (Tj = 25C unless otherwise stated)
Parameter
BVDSS STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage
Test Conditions
VGS = 0 ID = 1mA VGS = 10V VGS = 10V VDS = VGS VDS 15V VGS = 0 VGS = 20V VGS = -20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.5BVDSS ID = 10A ID = 6A ID = 10A ID = 250mA IDS = 6A VDS = 0.8BVDSS TJ = 125C ID = 1mA
Min.
400
Typ.
Max.
Unit
V
DBVDSS Temperature Coefficient of DTJ Breakdown Voltage
RDS(on) Static Drain - Source On-State Resistance4 Forward Transconductance4
Reference to 25C
0.46 0.55 0.70 2 4.9 25 250 100 -100 1400 3500 2300 32 2.2 13.8 65 10.0 40.5 2.5 92 79 58 10 40 4
V / C
W
V S(W )W(
VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS
Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 1 Gate - Source Charge 1 Gate - Drain ("Miller") Charge 1 Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
mA
nA
pF
nC
VDD = 200V RG = 9.1W
ID = 10A VGS = 10V
ns
SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current
1
A V ns
Diode Forward Voltage4 Reverse Recovery Time4 Reverse Recovery Charge4 Forward Turn-On Time
IS = 10A VGS = 0 IF = 10A
TJ = 25C TJ = 25C Negligible 2.0 6.5
1.5 600 5.6
di / dt 100A/ms VDD 50V
mC
PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to die) Internal Source Inductance (from centre of source pad to end of source bond wire)
nH
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/00

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