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| PD -95174 IRG4BC40KPBF INSULATED GATE BIPOLAR TRANSISTOR Features * Short Circuit Rated UltraFast: optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V * Generation 4 IGBT design provides higher efficiency than Generation 3 * Industry standard TO-247AC package * Lead-Free C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.1V @VGE = 15V, IC = 25A n-channel Benefits * Generation 4 IGBTs offer highest efficiency available * IGBTs optimized for specified application conditions TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM tsc VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 600 42 25 84 84 10 20 15 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A s V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. --- 0.50 --- 2 (0.07) Max. 0.77 --- 80 --- Units C/W g (oz) www.irf.com 1 04/23/04 IRG4BC40KPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(ON) VGE(th) VGE(th)/TJ gfe ICES IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 -- Emitter-to-Collector Breakdown Voltage T 18 -- Temperature Coeff. of Breakdown Voltage -- 0.46 -- 2.10 Collector-to-Emitter Saturation Voltage -- 2.70 -- 2.14 Gate Threshold Voltage 3.0 -- Temperature Coeff. of Threshold Voltage -- -13 Forward Transconductance U 7.0 14 -- -- Zero Gate Voltage Collector Current -- -- -- -- Gate-to-Emitter Leakage Current -- -- Max. Units Conditions -- V VGE = 0V, IC = 250A -- V VGE = 0V, IC = 1.0A -- V/C VGE = 0V, IC = 1.0mA 2.6 IC = 25A VGE = 15V -- IC = 42A See Fig.2, 5 V -- IC = 25A , TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = 100 V, IC = 25A 250 VGE = 0V, VCE = 600V A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 2000 VGE = 0V, VCE = 600V, TJ = 150C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- 10 -- -- -- -- -- -- -- -- -- Typ. 120 16 51 30 15 140 140 0.62 0.33 0.95 -- 30 18 190 150 1.9 13 1600 130 55 Max. Units Conditions 180 IC = 25A 24 nC VCC = 400V See Fig.8 77 VGE = 15V -- -- TJ = 25C ns 210 IC = 25A, VCC = 480V 210 VGE = 15V, RG = 10 -- Energy losses include "tail" -- mJ See Fig. 9,10,14 1.4 -- s VCC = 400V, TJ = 125C VGE = 15V, RG = 10 , VCPK < 500V -- TJ = 150C, -- IC = 25A, VCC = 480V ns -- VGE = 15V, RG = 10 -- Energy losses include "tail" -- mJ See Fig. 11,14 -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) S Repetitive rating; pulse width limited by maximum junction temperature. R VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 10, (See fig. 13a) T Pulse width 80s; duty factor 0.1%. U Pulse width 5.0s, single shot. 2 www.irf.com IRG4BC40KPBF 50 F o r b o t h: T ria n g u la r w a v e : 40 D u ty c y c le : 5 0 % TJ = 1 2 5 C T sink = 9 0 C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 2 8 W C la m p v o lta g e : 8 0 % o f ra te d Load Current (A) 30 S q u a re w a v e : 6 0 % o f ra te d v o lta g e 20 10 Ide a l d io de s 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) TJ = 150 o C 10 T J = 150C TJ = 25C 10 TJ = 25 oC 1 0.1 V = 15V 20s PULSE WIDTH GE 1 10 1 5 7 V C C = 50V 5s PULSE WIDTH 9 11 A VCE , Collector-to-Emitter Voltage (V) VG E , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4BC40KPBF 50 5.0 VCE , Collector-to-Emitter Voltage(V) V = 15V 80 us PULSE WIDTH GE Maximum DC Collector Current(A) 40 IC = 50 A 4.0 30 3.0 20 IC = 25 A 2.0 10 IC =12.5 A 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1 P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC40KPBF 3000 2500 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 25A 16 C, Capacitance (pF) 2000 Cies 1500 12 8 1000 500 0 C oes C res 1 10 100 4 0 VCE , Collector-to-Emitter Voltage (V) 0 20 40 60 80 100 120 140 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 1.80 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 10 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 C 1.60 I C = 25A RG = 10Ohm VGE = 15V VCC = 480V IC = 50 A 1.40 IC = 25 A 1 IC = 12.5 A 1.20 1.00 0.80 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resistance (Ohm) TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC40KPBF 5.0 3.0 2.0 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ VCC 4.0 VGE = 10Ohm = 150 C = 480V = 15V 1000 VGE = 20V T J = 125 oC 100 10 1.0 0.0 SAFE OPERATING AREA 0 10 20 30 40 50 1 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4BC40KPBF L 50V 1 00 0V VC * D .U .T. RL = 0 - 480V 480V 4 X IC@25C 480F 960V Q R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S VC D .U .T. Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V Q R 9 0% S 1 0% 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 10 % IC 5% t d (o n ) tr E on E ts = ( Eo n +E o ff ) tf t=5 s E o ff www.irf.com 7 IRG4BC40KPBF TO-220AB Package Outline 2 .8 7 (.1 1 3 ) 2 .6 2 (.1 0 3 ) 1 0 .5 4 (.4 15 ) 1 0 .2 9 (.4 05 ) 3.7 8 (.1 4 9 ) 3.5 4 (.1 3 9 ) -A6.4 7 (.2 5 5 ) 6.1 0 (.2 4 0 ) -B4.69 (.1 8 5 ) 4.20 (.1 6 5 ) 1 .3 2 (.0 5 2 ) 1 .2 2 (.0 4 8 ) 4 1 5 .24 ( .6 0 0 ) 1 4 .84 ( .5 8 4 ) 1 .1 5 (.0 4 5) M IN 1 2 3 H E X F E T- G A T E 1 1234- LE A D A S S IG N M E N T S L E A D AS S I G N M E N T S IG B T s , C o P A C K 1234G A TE C O LLE C TO R E M IT T E R C O LLE C TO R 14 .0 9 (.5 5 5 ) 13 .4 7 (.5 3 0 ) G A T2 - D R A IN E 3D R A IN S O U R C E S O U R C E A IN 4 - DR D R A IN 4 .06 (.1 6 0 ) 3 .55 (.1 4 0 ) 3X 3X 1 .40 ( .0 5 5 ) 1 .15 ( .0 4 5 ) 0 .9 3 (.0 3 7 ) 0 .6 9 (.0 2 7 ) M B A M 3X 0.5 5 (.0 22 ) 0.4 6 (.0 18 ) 0 .3 6 (.0 1 4 ) 2 .5 4 (.1 0 0) 2X N O TE S: 1 D IM E N S IO N IN G & T O LE R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 82 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H 2 .9 2 (.11 5 ) 2 .6 4 (.10 4 ) 3 O U T LIN E C O N F O R M S T O J E D E C O U T L IN E T O -2 20 A B . 4 H E A T S IN K & LE A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S . TO-220AB Part Marking Information E X AM P L E : T H IS IS A N IR F 1 0 1 0 L OT COD E 1 789 AS S E M B L E D ON W W 1 9 , 1 9 9 7 IN T H E AS S E M B L Y L I N E "C " N o te: "P " in ass em b ly line pos ition indicate s "Le ad-F ree" IN T E R N AT IO N AL R E CT IF I E R L OGO AS S E M B L Y L OT COD E P AR T N U M B E R D AT E C O D E Y E AR 7 = 1 9 9 7 W E E K 19 L IN E C Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/04 8 www.irf.com |
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