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| Previous Datasheet Index Next Data Sheet PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR Features * Switching-loss rating includes all "tail" losses * Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 500V VCE(sat) 3.0V @VGE = 15V, I C = 15A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-220AB Absolute Maximum Ratings Parameter VCES IC @ T C = 25C IC @ T C = 100C ICM ILM VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 500 25 15 50 50 20 10 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- Typ. -- 0.50 -- 2.0 (0.07) Max. 1.2 -- 80 -- Units C/W g (oz) Revision 0 C-581 To Order Previous Datasheet Index Next Data Sheet IRGB430U Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 500 -- -- V VGE = 0V, I C = 250A 20 -- -- V VGE = 0V, IC = 1.0A -- 0.46 -- V/C VGE = 0V, I C = 1.0mA -- 2.3 3.0 IC = 15A V GE = 15V -- 2.8 -- V IC = 25A See Fig. 2, 5 -- 2.6 -- IC = 15A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -11 -- mV/C VCE = VGE, IC = 250A 2.3 8.1 -- S VCE = 100V, I C = 15A -- -- 250 A VGE = 0V, V CE = 500V -- -- 1000 VGE = 0V, V CE = 500V, T J = 150C -- -- 100 nA VGE = 20V Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 31 6.2 12 29 11 91 66 0.24 0.17 0.41 13 27 130 130 0.76 7.5 660 110 12 Max. Units Conditions 47 IC = 15A 9.3 nC VCC = 400V See Fig. 8 19 VGE = 15V -- TJ = 25C -- ns IC = 15A, V CC = 400V 160 VGE = 15V, R G = 23 120 Energy losses include "tail" -- -- mJ See Fig. 9, 10, 11, 14 0.61 -- TJ = 150C, -- ns IC = 15A, V CC = 400V -- VGE = 15V, R G = 23 -- Energy losses include "tail" -- mJ See Fig. 10, 14 -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(V CES), VGE=20V, L=10H, R G= 23, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. C-582 To Order Previous Datasheet Index Next Data Sheet IRGB430U 30 For b oth: T riangular w ave: LO A D CU R R E N T (A ) 20 S quare w ave: 60 % of rated voltage D ut y cy c le: 50% TJ = 125 C T s in k = 90C G ate d rive as sp ecified P ow er D issipation = 21W C la mp v olta ge : 8 0% of rated 10 Id eal diodes 0 0.1 1 10 100 f, F re quency (kH z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 100 1000 I C , C ollector-to-E mitter C urrent (A ) TJ = 25 C TJ = 1 50 C 10 IC , Collector-to-Em itter C urrent (A ) 100 T J = 1 50 C 10 TJ = 25 C 1 1 1 V G E = 15 V 20 s P UL S E W ID TH 10 0.1 5 10 V C C = 1 00 V 5 s P U L S E W ID TH 15 20 V C E , C o llector-to-Em itter V oltage (V) V G E , G ate -to-E m itter V olta ge (V ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-583 To Order Previous Datasheet Index Next Data Sheet IRGB430U 25 V G E = 15 V 4.5 V G E = 15 V 80 s P U L S E W ID TH V C E , C ollector-to-E mitter V oltage (V ) Maxim um D C Collector C urrent (A ) 4.0 20 3.5 I C = 3 0A 15 3.0 10 2.5 I C = 1 5A 2.0 5 1.5 I C = 7.5 A 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T C , C ase Tem perature (C ) TC , C ase Tem perature (C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 10 T he rm al R e sp ons e (Z thJ C ) 1 D = 0 .5 0 0 .2 0 0 .1 0 PD M 0.1 0 .0 5 0 .0 2 0 .0 1 S IN G L E P U L S E (T H E R M A L R E S P O N S E ) t 1 t 2 N o te s : 1 . D u ty fa c to r D = t 1 /t 2 0.01 0.00001 2 . P e a k T J = P D M x Z thJ C + T C 0.0001 0.00 1 0.01 0.1 1 10 t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c ) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-584 To Order Previous Datasheet Index Next Data Sheet IRGB430U 140 0 C , Capacitance (pF) 100 0 Cies Coes 800 600 V G E , G ate-to-E m itter V oltag e (V ) 100 120 0 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 20 V C E = 40 0V I C = 15 A 16 12 8 400 Cres 4 200 0 0 1 10 0 10 20 30 40 V C E , C o llector-to-Em itter V oltage (V) Q G , To ta l G a te C h arg e (nC ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0 .4 8 T o ta l S w itc h in g L o s se s (m J ) 0 .4 6 0 .4 4 T o ta l S w itch in g L o s s e s (m J ) VCC VGE TC IC = 4 00 V = 15 V = 25 C = 1 5A 10 R G = 50 V GE = 1 5V V CC = 4 00 V I C = 30 A 1 0 .4 2 I C = 15 A 0 .4 0 I C = 7.5 A 0 .3 8 0 10 20 30 40 50 60 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 R G , G a te R e s is ta n c e ( ) W TC , C a s e T e m p era tu re (C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-585 To Order Previous Datasheet Index Next Data Sheet IRGB430U 2.0 1.6 IC , Collector-to-Emitter Current (A) Total S w itc hing Losses (m J) R G = 23 T C = 150C V C C = 4 00 V V G E = 15 V 100 VGE = 20V TJ = 125C SAFE OPERATING AREA 1.2 10 0.8 0.4 0.0 0 10 20 30 40 1 1 10 100 A 1000 I C , C ollecto r-to-E m itter C urrent (A ) VCE, Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix A: Section D - page D-3 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 1 - JEDEC Outline TO-220AB Section D - page D-12 C-586 To Order |
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