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Previous Datasheet Index Next Data Sheet PD - 9.1127 IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR Features * Short circuit rated - 10s @ 125C, V GE = 15V * Switching-loss rating includes all "tail" losses * Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated Fast IGBT VCES = 600V VCE(sat) 2.5V @VGE = 15V, I C = 8.0A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. TO-220AB Absolute Maximum Ratings Parameter VCES IC @ T C = 25C IC @ T C = 100C ICM ILM tsc VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 600 13 8.0 26 26 10 20 5.0 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A s V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- Typ. -- 0.50 -- 2 (0.07) Max. 2.1 -- 80 -- Units C/W g (oz) Revision 1 C-301 To Order Previous Datasheet Index Next Data Sheet IRGBC20M Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 600 -- -- V VGE = 0V, I C = 250A 20 -- -- V VGE = 0V, IC = 1.0A -- 0.42 -- V/C VGE = 0V, I C = 1.0mA -- 2.0 2.5 IC = 8.0A V GE = 15V -- 2.7 -- V IC = 13A See Fig. 2, 5 -- 2.5 -- IC = 8.0A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -11 -- mV/C VCE = VGE, IC = 250A 2.7 3.8 -- S VCE = 100V, I C = 8.0A -- -- 250 A VGE = 0V, V CE = 600V -- -- 1000 VGE = 0V, V CE = 600V, T J = 150C -- -- 100 nA VGE = 20V Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(V CES), VGE=20V, L=10H, R G= 50, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- 10 -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 7.9 16 IC = 8.0A 3.6 5.2 nC VCC = 400V See Fig. 8 6.0 9.0 VGE = 15V 29 -- TJ = 25C 22 -- ns IC = 8.0A, V CC = 480V 270 400 VGE = 15V, R G = 50 280 510 Energy losses include "tail" 0.14 -- 0.86 -- mJ See Fig. 9, 10, 11, 14 1.0 2.0 -- -- s VCC = 360V, T J = 125C VGE = 15V, R G = 50, VCPK < 500V 27 -- TJ = 150C, 21 -- ns IC = 8.0A, V CC = 480V 370 -- VGE = 15V, R G = 50 420 -- Energy losses include "tail" 1.4 -- mJ See Fig. 10, 14 7.5 -- nH Measured 5mm from package 365 -- VGE = 0V 47 -- pF VCC = 30V See Fig. 7 4.8 -- = 1.0MHz C-302 To Order Previous Datasheet Index Next Data Sheet IRGBC20M 20 F o r b o th : T ria n g u la r w a v e : 16 L oad C urre nt (A ) D u ty c y c le : 5 0 % TJ = 1 2 5 C T s ink = 9 0 C G a te d r ive a s s p e c ifie d P o w e r D is s ip a tio n = 1 4 W C la m p v o lta g e : 8 0 % o f ra te d 12 S q u a re w a v e : 6 0 % o f ra te d v o lta g e 8 4 Id ea l diod e s 0 0.1 1 10 100 A f, F re q u e n c y (k H z ) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 100 100 IC , Collector-to-Emitter Current (A) T = 25C J TJ = 150C 10 IC , Collector-to-Emitter Current (A) TJ = 150C 10 TJ = 25C 1 1 VGE = 15V 20s PULSE WIDTH A 10 1 5 10 VCC = 100V 5s PULSE WIDTH A 15 20 VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-303 To Order Previous Datasheet Index Next Data Sheet IRGBC20M 14 12 VCE , Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A) VGE = 15V 5.0 VGE = 15V 80s PULSE WIDTH I C = 16A 4.0 10 8 3.0 6 2.0 I C = 8.0A IC = 4.0A 4 1.0 2 0 25 50 75 100 125 A 150 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 TC , Case Temperature (C) TC, Case Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 10 T he rm al R e sp ons e (Z thJ C ) 1 D = 0 .5 0 0 .2 0 0 .1 0 0 .0 5 PD M 0.1 0 .0 2 0 .0 1 t S IN G L E P U L S E (T H E R M A L R E S P O N S E ) N o te s: 1 . D u ty fa c to r D = t 1 /t 2 1 t2 0.01 0.00001 2 . P e a k TJ = P D M x Z thJ C + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c ) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-304 To Order Previous Datasheet Index Next Data Sheet IRGBC20M 600 VGE , Gate-to-Emitter Voltage (V) V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 20 VCE = 400V I C = 8.0A 16 C, Capacitance (pF) Cies 400 12 Coes 8 200 4 Cres 0 1 10 A 100 0 0 4 8 12 16 A 20 VCE, Collector-to-Emitter Voltage (V) Qg , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0 .9 0 0 0 .8 9 6 T o tal S w itc hing Los se s (m J) Total Sw itching Losses (m J) VCC VG E TC IC = 48 0 V = 15 V = 25 C = 8.0A 10 R G = 50 V G E = 15 V V C C = 4 80 V I C = 16 A 0 .8 9 2 I C = 8.0A 1 0 .8 8 8 I C = 4.0A 0 .8 8 4 0 .8 8 0 10 20 30 40 50 60 0.1 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 R G , G ate R esistance ( ) W TC , C ase Tem perature (C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-305 To Order Previous Datasheet Index Next Data Sheet IRGBC20M 4.0 3.0 IC , Collector-to-Emitter Current (A) Total S w itching Losses (m J) RG TC V CC VGE = 50 = 150 C = 4 80 V = 15 V 100 VGE = 20V TJ = 125C SAFE OPERATING AREA 10 2.0 1.0 0.0 0 4 8 12 16 A 20 1 1 10 100 A 1000 I C , C o llector-to -E m itte r Current (A ) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix C: Section D - page D-5 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 1 - JEDEC Outline TO-220AB Section D - page D-12 C-306 To Order |
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