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PD - 97186
PDP TRENCH IGBT
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package
IRGI4055PBF
Key Parameters
300 1.10 220 150 V V A C
VCE min VCE(ON) typ. @ 36A IRP max @ TC= 25C c TJ max
C
G E
E C G
n-channel
G Gate C Collector
TO-220AB Full-Pak
E Emitter
Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.
Absolute Maximum Ratings
Parameter
VGE IC @ TC = 25C IC @ TC = 100C IRP @ TC = 25C PD @TC = 25C PD @TC = 100C TJ TSTG Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V Repetitive Peak Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw 300 10lbxin (1.1Nxm) N
Max.
30 36 18 220 46 19 0.37 -40 to + 150
Units
V A
c
W W/C C
Thermal Resistance
RJC Junction-to-Case
d
Parameter
Typ.
---
Max.
2.7
Units
C/W
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IRGI4055PBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
BVCES V(BR)ECS VCES/TJ Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltagee Breakdown Voltage Temp. Coefficient
Min.
300 18 --- --- ---
Typ. Max. Units
--- --- 0.23 0.95 1.10 1.65 1.90 2.30 --- -11 2.0 100 --- --- 38 132 42 --- 705 915 4280 200 125 5.0 13 --- --- --- --- 1.35 --- --- --- 5.0 --- 25 --- 100 -100 --- --- --- --- --- --- --- --- --- --- nH --- pF ns J S nC nA V mV/C A V V
Conditions
VGE = 0V, ICE = 1 mA VGE = 0V, ICE = 1 A
V/C Reference to 25C, ICE = 1mA VGE = 15V, ICE = 18A e VGE = 15V, ICE = 36A e V VGE = 15V, ICE = 110A e VGE = 15V, ICE = 150A e VGE = 15V, ICE = 150A, TJ = 150C VCE = VGE, ICE = 1mA VCE = 300V, VGE = 0V VCE = 300V, VGE = 0V, TJ = 150C VGE = 30V VGE = -30V VCE = 25V, ICE = 36A VCE = 200V, IC = 36A, VGE = 15Ve VCC = 240V, VGE = 15V, RG= 5.1 L = 220nH, C= 0.40F, VGE = 15V VCC = 240V, RG= 5.1, TJ = 25C L = 220nH, C= 0.40F, VGE = 15V VCC = 240V, RG= 5.1, TJ = 100C VGE = 0V VCE = 30V = 1.0MHz, Between lead, 6mm (0.25in.) from package and center of die contact See Fig.13
VCE(on)
Static Collector-to-Emitter Voltage
--- --- ---
VGE(th) VGE(th)/TJ ICES IGES gfe Qg Qgc tst EPULSE
Gate Threshold Voltage Gate Threshold Voltage Coefficient Collector-to-Emitter Leakage Current Gate-to-Emitter Forward Leakage Gate-to-Emitter Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Collector Charge Shoot Through Blocking Time Energy per Pulse
2.6 --- --- --- --- --- --- --- --- 100 --- ---
Ciss Coss Crss LC LE
Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Collector Inductance Internal Emitter Inductance
--- --- --- --- ---
Notes: Half sine wave with duty cycle = 0.10, ton=2sec. R is measured at TJ of approximately 90C. Pulse width 400s; duty cycle 2%.
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IRGI4055PBF
200
Top V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE
200
Top V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE
150
Bottom
150
Bottom
ICE (A)
ICE (A)
100
100
50
50
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V CE (V)
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V CE (V)
Fig 1. Typical Output Characteristics @ 25C
200
Top V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE
Fig 2. Typical Output Characteristics @ 75C
200
Top V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE
150
Bottom
150
Bottom
ICE (A)
ICE (A)
100
100
50
50
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V CE (V)
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V CE (V)
Fig 3. Typical Output Characteristics @ 125C
300
IC, Collector-to-Emitter Current (A)
Fig 4. Typical Output Characteristics @ 150C
20
T J = 25C 250 200 150 100
5
IC = 36A 15
T J = 150C
VCE (V)
10
T J = 25C
T J = 150C
50 10s PULSE WIDTH 0 0 5 10 15 VGE, Gate-to-Emitter Voltage (V)
0 5 10 VGE (V) 15 20
Fig 5. Typical Transfer Characteristics
Fig 6. VCE(ON) vs. Gate Voltage
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IRGI4055PBF
40 35
IC, Collector Current (A)
240 220 200
Repetitive Peak Current (A)
ton= 2s Duty cycle <= 0.10 Half Sine Wave
30 25 20 15 10 5 0 0 25 50 75 100 125 150
180 160 140 120 100 80 60 40 20 0 25 50 75 100 125 150 Case Temperature (C)
Fig 7. Maximum Collector Current vs. Case Temperature
1000 900
Energy per Pulse (J)
T C, Case Temperature (C)
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
1000
V CC = 240V L = 220nH C = variable
Energy per Pulse (J)
900 800 700
L = 220nH C = 0.4F
800 700 600 25C 500 400 300 160 170 180 190 200 210 220 230 100C
100C 600 500 25C 400 300 200 150 160 170 180 190 200 210 220 230 240 V CE, Collector-to-Emitter Voltage (V)
Ic , Peak Collector Current (A)
Fig 9. Typical EPULSE vs. Collector Current
1200 V CC = 240V 1000
Energy Pulse (J)
Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage
1000
L = 220nH t = 1s half sine
C= 0.4F
OPERATION IN THIS AREA LIMITED BY V CE(on) 100
1sec 10sec
800 C= 0.3F 600 C= 0.2F 400
IC (A)
100sec
10
200 25 50 75 100 125 150 TJ, Temperature (C)
1 1 10 VCE (V) 100 1000
Fig 11. EPULSE vs. Temperature
Fig 12. Forrward Bias Safe Operating Area
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IRGI4055PBF
100000 VGS = 0V, f = 1 MHZ C ies = C ge + C gd, C ce SHORTED C res = C gc C oes = C ce + C gc
16
VGE, Gate-to-Emitter Voltage (V)
14 12 10 8 6 4 2 0
IC = 30A IC = 36A
10000
Capacitance (pF)
Cies
1000
100
Coes Cres
10 0 50 100 150 200
0
25
50
75
100
125
150
V CE, Collector-toEmitter-Voltage(V)
Q G, Total Gate Charge (nC)
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
10 D = 0.50 0.20 0.10 0.05 0.02 0.01
Thermal Response ( Z thJC )
1
0.1
J
R1 R1 J 1 2
R2 R2
R3 R3 3 C 3
0.01 SINGLE PULSE ( THERMAL RESPONSE )
Ri (C/W) 0.2933 1.1021 1.3046
i (sec) 0.00049 0.190978 2.786
1
2
0.001
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-005 0.0001 0.001 0.01 0.1 1 10 100
0.0001 1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRGI4055PBF
A
RG
DRIVER L
C
PULSE A
VCC
B
PULSE B
RG
Ipulse DUT
tST
Fig 16a. tst and EPULSE Test Circuit
Fig 16b. tst Test Waveforms
VCE
Energy IC Current
0
L DUT 1K VCC
Fig 16c. EPULSE Test Waveforms
Fig. 17 - Gate Charge Circuit (turn-off)
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IRGI4055PBF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
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TO-220AB Full-Pak package is not recommended for Surface Mount Application. The specifications set forth in this data sheet are the sole and exclusive specifications applicable to the identified product, and no specifications or features are implied whether by industry custom, sampling or otherwise. We qualify our products in accordance with our internal practices and procedures, which by their nature do not include qualification to all possible or even all widely used applications. Without limitation, we have not qualified our product for medical use or applications involving hi-reliability applications. Customers are encouraged to and responsible for qualifying product to their own use and their own application environments, especially where particular features are critical to operational performance or safety. Please contact your IR representative if you have specific design or use requirements or for further information.
Data and specifications subject to change without notice. This product has been designed for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/06
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