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PD - 94764C
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB)
Product Summary
Part Number Radiation Level RDS(on) ID IRHLUB7970Z4 100K Rads (Si) 1.2 -0.53A IRHLUB7930Z4 300K Rads (Si) 1.2 -0.53A
IRHLUB7970Z4 60V, P-CHANNEL
TECHNOLOGY
International Rectifier's R7TM Logic Level Power Mosfets provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers.
UB
Features:
n n n n n n n n n
5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Complimentary N-Channel Available IRHLUB770Z4 Available on Tape & Reel
Absolute Maximum Ratings
Parameter
ID @ VGS = -4.5V, TC = 25C ID @ VGS = -4.5V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page -0.53 -0.33 -2.12 0.6 0.0045 10 3.5 -0.53 0.06 -4.4 -55 to 150 300 (for 5s) 43 (Typical )
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
mg
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1
09/03/04
IRHLUB7970Z4
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
-60 -- -- -1.0 0.8 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- -0.055 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 8.4 -- -- 1.2 -2.0 -- -1.0 -10 -100 100 3.6 1.5 1.8 22 22 27 27 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = -250A Reference to 25C, ID = -1.0mA VGS = -4.5V, ID = -0.33A A VDS = VGS, ID = -250A VDS = -10V, IDS = -0.33A A VDS= -48V ,VGS=0V VDS = -48V, VGS = 0V, TJ =125C VGS = -10V VGS =10V VGS = -4.5V, ID = -0.53A VDS = -30V VDD = -30V, ID = -0.53A, VGS =-4.5V, RG = 24
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 1.0MHz f = 5.1MHz, open drain
Ciss C oss C rss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
-- -- -- --
167 43 10 29
-- -- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -0.53 -2.12 -5.0 50 25
Test Conditions
A
V ns nC Tj = 25C, IS = -0.53A, VGS = 0V A Tj = 25C, IF = -0.53A, di/dt -100A/s VDD -25V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJA Junction-to-Ambient
Min Typ Max Units
-- -- 220
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHLUB7970Z4
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS V GS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-39) Static Drain-to-Source On-state Resistance (UB) Diode Forward Voltage Upto 300K Rads (Si)1
Min
-60 -1.0 -- -- -- -- -- --
Max
Units
V nA A V
Test Conditions
VGS = 0V, ID = -250A VGS = VDS , ID = -250A VGS = -10V VGS = 10V VDS = -48V, VGS=0V VGS = -4.5V, ID = -0.33A VGS = -4.5V, ID = -0.33A VGS = 0V, ID = -0.53A
-- -2.0 -100 100 -1.0 1.2 1.2 -5.0
1. Part numbers IRHLUB7970Z4, IRHLUB7930Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
(MeV/(mg/cm2)) Br I Au 37 60 82
Energy Range
(MeV) 285 345 357 (m) 36.8 32.7 28.5
@VGS=
VDS (V)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V -60 -60 -60
2V -60 -60 -60
4V -60 -60 -60
5V -60 -60 -60
6V -60 -60 -
7V -50 -20 -
8V -35 -
10V -25 -
-70 -60 -50 -40 -30 -20 -10 0 0 2 4 6 VGS 8 10 12
Br I Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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VDS
3
IRHLUB7970Z4
Pre-Irradiation
10
-I D, Drain-to-Source Current (A)
VGS TOP -10V -7.5V -5.0V -4.0V -3.5V -3.0V -2.5V BOTTOM -2.25V
10
-I D, Drain-to-Source Current (A)
VGS -10V -7.5V -5.0V -4.0V -3.5V -3.0V -2.5V BOTTOM -2.25V TOP
1
-2.25V
1
-2.25V
0.1 0.1 1
60s PULSE WIDTH Tj = 25C 10 100
60s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = -0.53A
-I D, Drain-to-Source Current ( )
1.5
1.0
T J = 25C T J = 150C VDS = -25V 15 60s PULSE WIDTH 1 2 2.2 2.4 2.6 2.8 3 -VGS , Gate-to-Source Voltage (V)
0.5
0.0 -60 -40 -20
VGS = -4.5V
0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHLUB7970Z4
250
-VGS , Gate-to-Source Voltage (V)
200
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
12
ID = -0.53A
10
VDS =-48V VDS =-30V VDS =-12V
C, Capacitance (pF)
Ciss
150
8
6
100
Coss
4
50
2
Crss
0
0
FOR TEST CIRCUIT SEE FIGURE 13
0 1 2 3 4 5 6
1
10
100
-VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
10
10 OPERATION IN THIS AREA LIMITED BY RDS(on)
-I SD , Reverse Drain Current ( )
T J = 150C 1 T J = 25C
-I D, Drain-to-Source Current (A)
1 100 s 1ms
0.1
0.1 Tc = 25C Tj = 150C Single Pulse 1 10
10ms
0.01 0 1 2 3
VGS = 0V 4 5
0.01
100
1000
-V SD , Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHLUB7970Z4
Pre-Irradiation
0.6
V DS V GS RG V GS
Pulse Width 1 s Duty Factor 0.1 %
RD
0.5
D.U.T.
+
-ID , Drain Current (A)
0.4
0.2
Fig 10a. Switching Time Test Circuit
0.1
VGS
td(on) tr t d(off) tf
0.0
10%
25
50
75
100
125
150
TC , Case Temperature ( C)
90% VDS
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
1000
Thermal Response (Z thJC )
100
D = 0.50 0.20 0.10 0.05 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T = P DM x Z thJC + TC J 0.01 0.1 1 10
10 0.02 0.01
1 0.00001
0.0001
0.001
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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-
V DD
Pre-Irradiation
IRHLUB7970Z4
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
8 7 6 5 4 3 2 1 0
RG
D.U.T
IAS
+
DRIVER
V DD VDD
A
ID -0.24A -0.34A BOTTOM -0.53A TOP
VGS -20V
tp
0.01
15V
Fig 12a. Unclamped Inductive Test Circuit
I AS
25
Starting TJ , Junction Temperature ( C)
50
75
100
125
150
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
50K
VG
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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+
D.U.T.
-
-4.5V
-12V 12V
.2F .3F
QGS
QGD
VDS
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IRHLUB7970Z4
Pre-Irradiation
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = - 25V, starting TJ = 25C, L= 25mH Peak IL = -0.53A, VGS = -10V A ISD -0.53A, di/dt -100A/s, VDD - 60V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
-10 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. -48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- UB
3.25 [.128] 2.92 [.115] 0.61 [.024] 0.41 [.016] 0.96 [.038] 0.56 [.022]
3X 2.74 [.108] 2.41 [.095] 3 2 1
3X 0.355 [.014] MIN. 1.42 [.056] 1.17 [.046] 2.01 [.079] 1.81 [.071]
0.99 [.039] 0.89 [.035]
PAD AS SIGNMENT S NOT ES : 1. OUT LINE CONFORMS T O MIL-PRF-19500/255L 2. ALL DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 3. CONT ROLLING DIMENS ION: INCH. 1 = GAT E 2 = S OURCE 3 = DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 09/2004
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