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PD-95818C
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
Part Number Radiation Level RDS(on) IRHYB67230CM 100K Rads (Si) 0.13 IRHYB63230CM 300K Rads (Si) 0.13 ID 16A 16A
IRHYB67230CM 200V, N-CHANNEL
TECHNOLOGY
Low-Ohmic TO-257AA Tabless
International Rectifier's R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today's high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n n
Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight 16 10 64 75 0.6 20 83 16 7.5 9.0 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 (0.063 in. /1.6 mm from case for 10s) 3.7 (Typical)
g
For footnotes refer to the last page
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1
03/17/06
IRHYB67230CM
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
200 -- -- 2.0 11 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.19 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.13 4.0 -- 10 25 100 -100 42 10 20 15 40 35 15 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 10A A VDS = VGS, ID = 1.0mA VDS = 15V, IDS = 10A A VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 16A VDS = 100V VDD = 100V, ID = 16A VGS =12V, RG = 7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA
nC
ns
nH
Ciss Coss Crss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance
-- -- -- --
1660 206 2.6 1.75
-- -- -- --
pF
Measured from Drain lead (6mm / 0.25in. from package) to Source lead (6mm /0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 16 64 1.2 300 3.2
Test Conditions
A
V ns C Tj = 25C, IS = 16A, VGS = 0V A Tj = 25C, IF = 16A, di/dt 100A/s VDD 25V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 1.67 80
C/W
Test Conditions
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
2
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Radiation Characteristics Pre-Irradiation
IRHYB67230CM
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (Low Ohmic TO-257) Diode Forward Voltage Up to 300K Rads (Si)
Units
V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS=160V, VGS=0V VGS = 12V, ID = 10A VGS = 12V, ID = 10A VGS = 0V, ID = 16A
Min
200 2.0 -- -- -- -- -- --
Max
-- 4.0 100 -100 10 0.134 0.13 1.2
Part numbers IRHYB67230CM, IRHYB63230CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Xe Xe Au
LET
(MeV/(mg/cm )) 43 59 90
2
Energy
(MeV) 2441 825 1480
Range
(m) 205 66 80
@VGS= 0V
VDS (V)
@VGS= -5V @VGS= -10V @VGS= -15V
200 200 170
200 200 170
200 200 --
190 190 --
240 200 160 120 80 40 0 0 -5 -10 VGS -15 -20
Xe - LET=43 Xe - LET=59 Au - LET=90
VDS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHYB67230CM
Pre-Irradiation
100
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
10
5.0V
5.0V 1
1
60s PULSE WIDTH Tj = 25C 0.1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V)
60s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
T J = 150C
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 16A
ID, Drain-to-Source Current (A)
2.0
T J = 25C 10
1.5
1.0
0.5
1 2 4 6 8
VDS = 50V 15 60s PULSE WIDTH 10 12 14 16
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
4
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Pre-Irradiation
IRHYB67230CM
3000
2400
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 100KHz 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 16A
16
VDS = 160V 6 VDS = 100V VDS = 40V
C, Capacitance (pF)
Ciss
1800
12
Coss
1200
8
600
4
Crss
0 1 10 100
0
FOR TEST CIRCUIT SEE FIGURE 13
0 10 20 30 40 50 60
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
ISD , Reverse Drain Current (A)
10
T J = 150C
ID, Drain-to-Source Current (A)
100
10
T J = 25C
100s
1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100
1.0
1ms 10ms
1000
VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD , Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHYB67230CM
Pre-Irradiation
16
VDS VGS
RD
ID , Drain Current (A)
12
RG
D.U.T.
+
-V DD
VGS
8
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
4
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10
0.1
0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
P DM t1 t2
0.01
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHYB67230CM
160
EAS , Single Pulse Avalanche Energy (mJ)
15V
120
ID 7.0A 10A BOTTOM 16A TOP
VDS
L
DRIVER
RG
D.U.T.
IAS
80
+ - VDD
A
VGS 20V
tp
0.01
40
Fig 12a. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150
V(BR)DSS tp
Starting T J , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHYB67230CM
Pre-Irradiation
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = 25V, starting TJ = 25C, L= 0.65mH Peak IL = 16A, VGS = 12V A I SD 16A, di/dt 750A/s, VDD 200V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- Low-Ohmic TO-257AA ( Tabless)
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