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High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) Short Circuit SOA Capability Square RBSOA IXDR 30N120 D1 VCES IC25 IXDR 30N120 VCE(sat) typ = 1200 V = 50 A = 2.4 V C G G C ISOPLUS 247TM E153432 G C E E E Isolated Backside* G = Gate C = Collector E = Emitter IXDR 30N120 IXDR 30N120 D1 *Patent pending Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg VISOL Weight Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 20 kW Continuous Transient TC = 25C TC = 90C TC = 90C, tp = 1 ms VGE = 15 V, TJ = 125C, RG = 47 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = VCES, TJ = 125C RG = 47 W, non repetitive TC = 25C IGBT Diode Maximum Ratings 1200 1200 20 30 50 30 60 ICM = 50 VCEK < VCES 10 200 95 -55 ... +150 -55 ... +150 V V V V A A A A s W W C C V~ 6 g Features * NPT IGBT technology - high switching speed - low switching losses - square RBSOA, no latch up - high short circuit capability - positive temperature coefficient for easy paralleling - MOS input, voltage controlled - fast recovery epitaxial diode Epoxy meets UL 94V-0 Isolated and UL registered E153432 q q Advantages * * * * * DCB Isolated mounting tab Meets TO-247AD package Outline Package for clip or spring mounting Space savings High power density 50/60 Hz, RMS IISOL 1 mA 2500 Typical Applications * * * * * AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 4.5 TJ = 25C TJ = 125C 2.5 6.5 V V V(BR)CES VGE(th) ICES IGES VCE(sat) VGE = 0 V IC = 1 mA, VCE = VGE VCE = VCES 1.5 mA mA 500 nA VCE = 0 V, VGE = 20 V IC = 30 A, VGE = 15 V 2.4 2.9 V 031 (c) 2000 IXYS All rights reserved 1-4 IXDR 30N120 D1 IXDR 30N120 Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1650 VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 30 A, VGE = 15 V, VCE = 0.5 VCES 250 110 120 100 Inductive load, TJ = 125C IC = 30 A, VGE = 15 V, VCE = 600 V, RG = 47 W 70 500 70 4.6 3.4 pF pF pF nC ns ns ns ns mJ mJ 0.6 K/W Package with heatsink compound 0.25 K/W Dim. A A1 A2 b b1 b2 C D E e L L1 Q R S T U Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 13.21 13.72 15.75 16.26 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection ISOPLUS 247 OUTLINE Cies Coes C res Qg td(on) tr td(off) tf Eon Eoff RthJC RthCH Reverse Diode (FRED) Symbol VF IF IRM t rr t rr RthJC Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.5 2.0 2.7 V V A A A ns ns 1.3 K/W IF = 30 A, VGE = 0 V IF = 30 A, VGE = 0 V, TJ = 125C TC = 25C TC = 90C IF = 30 A, -diF/dt = 400 A/s, VR = 600 V VGE = 0 V, TJ = 125C IF = 1 A, -diF/dt = 100 A/s, VR = 30 V, VGE = 0 V 50 27 20 200 40 (c) 2000 IXYS All rights reserved 2-4 IXDR 30N120 D1 IXDR 30N120 60 TJ = 25C VGE=17V 15V 13V 11V 60 TJ = 125C VGE=17V 15V 13V A 50 IC A 50 IC 40 40 30 20 9V 11V 30 20 10 0 0.0 9V 10 0 0.0 0.5 1.0 1.5 2.0 2.5 VCE 3.0 V 0.5 1.0 1.5 2.0 2.5 3.0 VCE 3.5 V Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 60 A 50 IC VCE = 20V TJ = 25C 80 A 70 IF 60 50 40 30 20 TJ = 25C TJ = 125C 40 30 20 10 0 5 6 7 8 9 10 VGE 10 0 11 V 0 1 2 VF 3 V 4 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 60 A IRM trr 20 V VCE = 600V IC = 25A 300 ns trr VGE 15 40 200 10 20 5 TJ = 125C VR = 600V IF = 30A IRM 100 0 0 20 40 60 80 100 120 140 nC QG 0 0 200 400 IXDH/..R30N120 0 600 800 A/ms -di/dt 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode (c) 2000 IXYS All rights reserved 3-4 IXDR 30N120 D1 IXDR 30N120 14 12 mJ Eon 10 140 ns 120 100 td(on) tr Eon 80 VCE = 600V VGE = 15V RG = 47W TJ = 125C 6 mJ 5 t Eoff Eoff td(off) 600 ns 500 400 t VCE = 600V VGE = 15V RG = 47W TJ = 125C 4 3 8 6 4 2 0 0 300 200 100 0 60 40 20 0 2 1 0 0 10 20 30 40 IC tf 50 A 10 20 30 IC 40 50 A Fig. 7 Typ. turn on energy and switching times versus collector current 12 mJ 10 Eon 240 td(on) ns Eon 180 tr t 120 Fig. 8 Typ. turn off energy and switching times versus collector current 5 mJ Eoff 1500 VCE = 600V VGE = 15V IC = 25A TJ = 125C 8 6 4 VCE = 600V VGE = 15V IC = 25A TJ = 125C 4 3 2 td(off) Eoff ns 1200 t 900 600 300 tf 0 60 2 0 0 40 80 120 160 RG 200 1 0 0 40 80 120 160 RG 200 W 0 240 W 240 Fig. 9 Typ. turn on energy and switching times versus gate resistor 60 A 50 ICM 10 K/W 1 ZthJC RG = 47W TJ = 125C VCEK < VCES Fig.10 Typ. turn off energy and switching times versus gate resistor diode IGBT 40 30 20 10 0 0 200 400 600 800 1000 1200 V VCE 0.1 0.01 0.001 single pulse IXDR30N120 0.0001 0.00001 0.0001 0.001 0.01 t 0.1 s 1 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance (c) 2000 IXYS All rights reserved 4-4 |
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