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| Advanced Technical Information PolarHTTM HiPerFET IXFH 120N20P IXFK 120N20P Power MOSFET N-Channel Enhancement Mode Avalanche Rated, Fast Intrinsic Diode VDSS = 200 V ID25 = 120 A RDS(on) 22 m trr 140 ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C; RGS = 1 M Continuous Transient TC = 25C External lead current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 175C, RG = 4 TC = 25C Maximum Ratings 200 200 20 30 120 75 300 60 60 2.0 10 714 -55 ... +175 175 -55 ... +175 V V V V A A A A mJ J V/ns W C C C C TO-247 (IXFH) G S D (TAB) D TO-264 (IXFK) G D S (TAB) D = Drain TAB = Drain G = Gate S = Source Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-264 300 1.13/10 Nm/lb.in. 6 10 g g Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 175C Characteristic Values Min. Typ. Max. 200 2.5 5.0 100 25 500 22 V V nA A A m Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2004 IXYS All rights reserved DS99223(10/04) IXFH 120N20P IXFK 120N20P Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 40 63 6000 VGS = 0 V, VDS = 25 V, f = 1 MHz 1300 265 30 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 3.3 (External) 35 100 31 152 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 40 75 S pF pF pF ns ns ns ns nC nC nC 0.21 K/W TO-247 TO-264 0.21 0.15 K/W K/W Terminals: 1 - Gate 2 - Drain 1 2 3 TO-247 (IXFH) Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS= 10 V; ID = 0.5 ID25, pulse test Dim. Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25C, unless otherwise specified) Min. typ. Max. 120 300 1.5 100 0.4 6.0 A A V Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 TO-264 (IXFK) IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A, -di/dt = 100 A/s VR = 100 V 140 ns C A Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 IXFH 120N20P IXFK 120N20P Fig. 1. Output Characteristics @ 25C 120 VGS = 10V 9V 8V 270 240 210 VGS = 10V 9V Fig. 2. Extended Output Characteristics @ 25C 100 I D - Amperes I D - Amperes 80 180 150 120 90 60 30 0 6V 7V 8V 60 7V 40 6V 5V 0 0 0.5 1 1.5 2 2.5 20 0 2 4 6 V D S - Volts Fig. 3. Output Characteristics @ 150C 120 VGS = 10V 9V 8V 3 VGS = 10V V D S - Volts 8 10 12 14 16 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Te m perature 100 R D S ( o n ) - Normalized 2.5 I D = 120A 2 I D = 60A 1.5 I D - Amperes 80 7V 60 6V 40 20 5V 1 0 0 1 2 0.5 V D S - Volts 3 4 5 6 -50 -25 0 TJ - Degrees Centigrade 25 50 75 100 125 150 175 Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current 4 TJ = 175C 3.5 90 80 70 3 2.5 2 1.5 20 1 0.5 0 30 60 90 TJ = 25C 10 0 VGS = 15V Fig. 6. Drain Current vs. Case Tem perature External Lead Current Limit R D S ( o n ) - Normalized I D - Amperes 60 50 40 30 VGS = 10V I D - Amperes 120 150 180 210 240 270 300 -50 -25 0 TC - Degrees Centigrade 25 50 75 100 125 150 175 (c) 2004 IXYS All rights reserved IXFH 120N20P IXFK 120N20P Fig. 7. Input Adm ittance 180 90 80 150 70 Fig. 8. Transconductance g f s - Siemens I D - Amperes 120 60 50 40 30 20 10 0 TJ = -40C 25C 150C 90 60 TJ = 150C 25C -40C 30 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 0 30 60 90 120 150 180 210 V G S - Volts Fig. 9. Source Curre nt vs. Source -To-Drain Voltage 350 300 250 10 9 8 VDS = 100V I D = 60A I G = 10mA I D - Amperes Fig. 10. Gate Charge I S - Amperes 7 VG S - Volts TJ = 150C TJ = 25C 0.4 0.6 0.8 1 1.2 1.4 1.6 200 150 100 50 0 6 5 4 3 2 1 0 V S D - Volts 0 20 40 Q G - nanoCoulombs 60 80 100 120 140 160 Fig. 11. Capacitance 100,000 1000 Fig. 12. Forw ard-Bias Safe Operating Are a TJ = 175C R DS(on) Limit TC = 25C 25s 100 f = 1MHz Capacitance - picoFarads 10,000 I D - Amperes Ciss Coss 1,000 100s 1ms Crss DC 100 0 5 10 15 10 10ms V DS - Volts 20 25 30 35 40 10 V D S - Volts 100 1000 IXYS reserves the right to change limits, test conditions, and dimensions. IXFH 120N20P IXFK 120N20P F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e 1.00 R( t h ) J C - C / W 0.10 0.01 1 10 100 1000 Pu ls e W id th - m illis e c o n d s (c) 2004 IXYS All rights reserved |
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