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HiPerFASTTM IGBT
Surface Mountable
IXGH50N60A VCES IXGH50N60AS IC25 VCE(sat) tfi
= 600 V = 75 A = 2.7 V = 275 ns
Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, T VJ = 125C, RG = 10 Clamped inductive load, L = 30 H TC = 25C
Maximum Ratings 600 600 20 30 75 50 200 ICM = 100 @ 0.8 VCES 250 -55 ... +150 150 -55 ... +150 300 V V V V A A A A
TO-247 SMD (50N60AS)
G E
C (TAB)
TO-247 AD (50N60A)
C (TAB)
W C C C C
G
C
E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, TO-247 AD TO-247 SMD TO-247 AD
1.13/10 Nm/lb.in. 4 6 g g
Features l International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD l High frequency IGBT l High current handling capability l 2nd generation HDMOSTM process l MOS Gate turn-on - drive simplicity Applications l AC motor speed control l DC servo and robot drives DC choppers l Uninterruptible power supplies (UPS) l Switch-mode and resonant-mode power supplies
l
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25C TJ = 125C 5 200 1 100 2.7 V V A mA nA V
BVCES VGE(th) ICES I GES VCE(sat)
IC IC
= 250 A, VGE = 0 V = 250 A, VCE = VGE
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
Advantages High power density l Suitable for surface mounting l Switching speed for high frequency applications l Easy to mount with 1 screw, TO-247 (insulated mounting screw hole)
l
(c) 1996 IXYS All rights reserved
92797H(9/96)
IXGH50N60A
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 25 35 4000 VCE = 25 V, VGE = 0 V, f = 1 MHz 430 100 200 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, T J = 25C IC = IC90, VGE = 15 V, L = 30 H, VCE = 0.8 VCES , RG = Roff = 2.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 30 H VCE = 0.8 V CES, RG = Roff = 2.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES , higher TJ or increased RG 35 80 50 210 200 275 4.8 50 240 3 280 600 9.6 400 250 50 100 S
IXGH50N60AS
TO-247 AD Outline
gfs Cies Coes Cres Qg Q ge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
I C = I C90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 %
P
pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.50 K/W
Dim.
e
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-247 SMD Outline
0.25
K/W
Min. Recommended Footprint (Dimensions in inches and (mm))
1. Gate 2. Collector
3. Emitter 4. Collector
Dim. A A1 A2 b b1 C D E e L L1 L2 L3 L4 OP Q R S
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.91 0.61 20.80 15.75 5.45 4.90 2.70 2.10 0.00 1.90 3.55 5.59 4.32 6.15 1.40 2.13 0.80 21.34 16.13 BSC 5.10 2.90 2.30 0.10 2.10 3.65 6.20 4.83 BSC
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .075 .024 .819 .620 .215 .193 .106 .083 .00 .075 .140 .220 .170 .242 .055 .084 .031 .840 .635 BSC .201 .114 .091 .004 .083 .144 .244 .190 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
IXGH50N60A
Fig. 1 Saturation Characteristics
80
T J = 25C
IXGH50N60AS
Output Characterstics
13V 11V 9V T J = 25C
Fig. 2
350 300
VGE = 15V
70 60 50 40 30 20 10 0
VGE = 15V 13V 11V 9V 7V 5V
IC - Amperes
IC - Amperes
250 200 150 100 50 0
7V
5V
0
1
2
3
4
5
0
2
4
6
8
10 12 14 16 18 20
VCE - Volts
VCE - Volts
Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage
10 9 8 7
T J = 25C
Fig. 4
1.5 1.4
Temperature Dependence of Output Saturation Voltage
IC = 80A
VCE(sat) - Normalized
1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150
IC = 20A IC = 40A
VCE - Volts
6 5 4 3 2 1 0 4 5 6 7 8 9 10 11 12 13 14 15
IC = 40A IC = 20A
VGE - Volts
TJ - Degrees C
Fig. 5 Input Admittance
80
Fig. 6
1.2
Temperature Dependence of Breakdown and Threshold Voltage
VGE(th) @ 250A
60
BV / VCE(sat) - Normalized
70
VCE = 100V
1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150
BVCES @ 3mA
IC - Amperes
50 40 30 20
TJ = 25C
10 0
T J = 125C
0
1
2
3
4
5
6
7
8
9
10
VGE - Volts
TJ - Degrees C
(c) 1996 IXYS All rights reserved
IXGH50N60A
Fig.7 Gate Charge
15 12
IC = 40A V CE = 500V
IXGH50N60AS
Fig.8 Turn-Off Safe Operating Area
100
10
IC - Amperes
VGE - Volts
9 6 3 0
T J = 125C
1
dV/dt < 3V/ns
0.1
0.01 0 50 100 150 200 250 0 100 200 300 400 500 600 700
Total Gate Charge - (nC)
VCE - Volts
Fig.9 Capacitance Curves
4500 4000
Cies
Capacitance - pF
3500 3000 2500 2000 1500 1000 500 0 0 5
Cres
Coes
10
15
20
25
VCE - Volts
Fig.10 Transient Thermal Impedance
1
D=0.5
ZthJC (K/W)
0.1
D=0.2 D=0.1 D=0.05 D=0.02 D = Duty Cycle
0.01 D=0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - seconds G50N60 2 JNB
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025

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