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IGBT High Speed Short Circuit SOA Capability meEaaaaa~eo=C~i~=eUEEi IXSH 50N60B Vbp IOR VbEe~iF = 600 V = 75 A = 2.5 V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C, limited by leads TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 22 Clamped inductive load, L = 30 H VGE = 15 V, VCE = 360 V, TJ = 125C RG = 22 , non repetitive TC = 25C Maximum Ratings 600 600 20 30 75 50 200 ICM = 100 @ 0.8 VCES 10 250 -55 ... +150 150 -55 ... +150 V V V V A A A A TO-247 AD G =Eq^_F C E G = Gate, E = Emitter, C = Collector, TAB = Collector Features s W C C C International standard package JEDEC TO-247 AD, and TO-247 SMD for surface mount Guaranteed Short Circuit SOA capability High frequency IGBT Latest generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Applications Mounting torque 1.13/10 Nm/lb.in. TO-247 SMD TO-247 4 6 300 g g C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 4 TJ = 25C TJ = 125C 8 200 1 100 2.2 2.5 V V A mA nA V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 A, VGE = 0 V = 4 mA, VCE = VGE AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost High power density VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90; VGE = 15 V =NVVV=fuvp=^aa=eaOUie=eEeEeiEC VTROQ_= EQLVVF IXSH 50N60B Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 16 23 S m TO-247 AD Outline gfs IC(on) Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % VGE = 15 V, VCE = 10 V 160 3850 A pF pF pF nC nC nC ns ns 300 300 ns ns aaaK E VCE = 25 V, VGE = 0 V, f = 1 MHz 440 50 167 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 H, VCE = 0.8 VCES, RG = 2.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 VCES, RG = 2.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 45 88 70 70 150 150 3.3 70 70 0.6 230 230 4.8 6.0 mJ ns ns mJ ns ns mJ 0.5 K/W jaaaaaEiEe jaaK j~nK ^ QKT RKP OKO OKRQ ^N ^O OKO OKS A NKM NKQ AN NKSR OKNP AO OKUT PKNO KQ KU a OMKUM ONKQS b NRKTR NSKOS E RKOM RKTO i NVKUN OMKPO iN QKRM m PKRR PKSR n RKUV SKQM o QKPO RKQV p SKNR _p faAUEe jaaK j~nK KNUR KOMV KMUT KNMO KMRV KMVU KMQM KMRR KMSR KMUQ KNNP KNOP KMNS KMPN KUNV KUQR KSNM KSQM MKOMR MKOOR KTUM KUMM KNTT KNQM KNQQ MKOPO MKORO KNTM KONS OQO _p 0.25 K/W IXYS reserves the right to change limits, test conditions, and dimensions. fuvp=jlpcbqp=~aC=fd_qe=~eE=AciEeEC=Ao=caE=ce=aceE=cN=iUE=NcaaciaaO=rKpK=e~iEaieW QIUPRIRVO QIURMIMTO QIUUNINMS QIVPNIUQQ RIMNTIRMU RIMPQITVS RIMQVIVSN RIMSPIPMT RINUTINNT RIOPTIQUN RIQUSITNR RIPUNIMOR IXSH 50N60B 160 TJ = 25C VGE = 15V 13V TJ = 25C 100 80 VGE = 15V 120 IC - Amperes IC - Amperes 60 40 20 9V 11V 13V 80 11V 40 9V 0 0 2 4 6 8 7V 0 10 0 4 8 12 16 20 VCE - Volts VCE - Volts Figure 1. Saturation Voltage Characteristics 100 TJ = 125C Figure 2. Extended Output Characteristics 1.6 VGE = 15V 13V IC = 100A VCE (sat) - Normalized 80 1.4 VGE = 15V IC - Amperes 1.2 1.0 0.8 IC = 25A 60 11V 40 20 0 0 2 4 6 8 10 9V 7V IC = 50A 0.6 0.4 25 50 75 100 125 150 VCE - Volts TJ - Degrees C Figure 3. Saturation Voltage Characteristics Figure 4. Temperature Dependence of VCE(sat) 10000 100 VCE = 10V f = 1Mhz Ciss 80 Capacitance - pF IC - Amperes 1000 60 40 TJ = 125C 100 Coss 20 T J = 25C Crss 0 4 6 8 10 VGE - Volts 10 12 14 16 0 5 10 15 20 25 30 35 40 VCE-Volts Figure 5. Admittance Curves Figure 6. Capacitance Curves =NVVV=fuvp=^aa=eaOUie=eEeEeiEC IXSH 50N60B 3.0 TJ = 125C E(ON) 24 RG = 10 4 TJ = 125C E(OFF) 20 2.5 E(ON) - millijoules 20 E(OFF) - milliJoules E(ON) - millijoules 3 E(ON) 2.0 1.5 1.0 0.5 0.0 0 20 40 60 80 E(OFF) 16 12 8 4 0 100 IC = 100A 15 E(OFF) - millijoules 2 E(ON) E(ON) IC = 50A E(OFF) 10 1 E(OFF) IC =25A 5 0 0 10 20 30 40 50 0 60 IC - Amperes RG - Ohms Figure 7. Dependence of EON and EOFF on IC. Figure 8. Dependence of EON and EOFF on RG. 600 20 IC =50A 16 12 8 4 0 0 VCE = 250V 100 IC - Amperes 10 TJ = 125C RG = 6.2 dV/dt < 5V/ns 1 0.1 25 50 75 100 125 150 175 0 100 200 300 400 500 600 Qg - nanocoulombs VCE - Volts Figure 9. Gate Charge 1 Figure 10. Turn-off Safe Operating Area ZthJC (K/W) 0.1 D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse 0.01 D = Duty Cycle 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Figure 11. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. fuvp=jlpcbqp=~aC=fd_qe=~eE=AciEeEC=Ao=caE=ce=aceE=cN=iUE=NcaaciaaO=rKpK=e~iEaieW QIUPRIRVO QIURMIMTO QIUUNINMS QIVPNIUQQ RIMNTIRMU RIMPQITVS RIMQVIVSN RIMSPIPMT RINUTINNT RIOPTIQUN RIQUSITNR RIPUNIMOR |
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