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| SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS. D KMB7D1DP30QA Dual P-Ch Trench MOSFET H T P G L FEATURES VDSS=-30V, ID=-7.1A Drain-Source ON Resistance RDS(ON)=25m (Max.) @ VGS=-10V RDS(ON)=41m (Max.) @ VGS=-4.5V Super Hige Dense Cell Design 1 4 8 5 B1 B2 A DIM A B1 B2 D G H L P T MILLIMETERS _ 4.85 + 0.2 _ 3.94 + 0.2 _ 6.02 + 0.3 _ 0.4 + 0.1 0.15+0.1/-0.05 _ 1.63 + 0.2 _ 0.65 + 0.2 1.27 0.20+0.1/-0.05 MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage ) SYMBOL VDSS VGSS N-Ch -30 22 -7.1 ID -5.7 IDP IS PD 0.7 Tj Tstg RthJA 150 -55 150 110 /W -40 -1.7 1.1 W A A UNIT V V FLP-8 DC@TA=25 Drain Current DC@TA=70 Pulsed Drain-Source-Diode Forward Current Drain Power Dissipation TA=25 TA=70 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Note : Surface Mounted on FR4 Board, t 10sec. KMB7D1DP 30QA 705 PIN CONNECTION (TOP VIEW) S1 G1 S2 G2 1 8 D1 D1 D2 D2 1 8 7 6 5 2 7 2 3 3 6 4 5 4 2007. 4. 17 Revision No : 0 1/5 KMB7D1DP30QA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance Forward Transconductance Dynamic Input Capaclitance Ouput Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delat Time Turn-On Rise Time Turn-On Deley Time Turn-On Fall Time Source-Drain Diode Ratings Source-Drain Forward Voltage * : Pulse Test : Pulse width <300 VSDF* , Duty cycle < 2% VGS=0V, IDR=-1.7A -0.8 -1.2 V Ciss Coss Crss Qg* Qgs* Qgd* td(on)* tr* td(off)* tr* VDD=-15V, VGS=-10V ID=-1A, RG=6 VDS=-15V, VGS=-10V, ID=-7.1A VDS=15V, f=1MHz, VGS=OV 1550 420 380 33 5.4 8.9 9 12 60 34 50 15 20 ns 90 50 nC pF BVDSS IDSS VGS=0V, VDS=-30V, Tj=55 IGSS Vth RDS(ON)* VGS=-4.5V, ID=-5.5A gfs* VDS=-10V, ID=-7.1A 33 20 41 S VGS= 20V, VDS=0V -1 20 -25 100 -3 25 m nA V IDS=-10 A, VGS=0V, VGS=0V, VDS=-30V -30 -1 A V SYMBOL ) TEST CONDITION MIN. TYP. MAX. UNIT VDS=VGS, ID=-250 A VGS=-10V, ID=-7.1A 2007. 4. 17 Revision No : 0 2/5 KMB7D1DP30QA Fig1. ID - VDS Drain Source On Resistance RDS(ON) () 200 10V Fig2. RDS(ON) - ID Common Source Tc=25 C Pulse Test 4.5V 4.0V 3.5V Drain Current ID (A) 100 3.0V VGS=4.5V 4 2.5V VGS=2.0V VGS=10V 0 0 4 8 12 16 20 0.4 Drain - Source Voltage VDS (V) Drain - Current ID (A) Fig3. ID - VGS 40 Common Source 50 Fig4. RDS(on) - Tj Common Source VDS=10V, ID=7A Pulse Test Drain Current ID (A) VDS=5V Pulse Test Normalized Drain-Source On-Resistance RDS(ON) (m) 40 30 20 10 0 30 20 10 25 C 125 C -55 C 0 0 1 2 3 4 5 -75 -50 -25 0 25 50 75 100 125 150 Gate-Source Volatage VGS (V) Junction Temperature Tj ( C ) Fig5. Vth - Tj Gate Threshold Voltage Vth (V) 5 Common Source 10 8 6 4 2 0 0 0.2 Fig6. IS-VSDF 3 2 1 0 -75 -50 -25 0 25 50 75 100 125 150 Drain Current ID (A) D 4 Pulse Test VGS=VDS I =250A 0.6 1.0 1.4 1.8 Junction Temperature Tj ( C ) Source - Drain Forward Voltage VSDF (V) 2007. 4. 17 Revision No : 0 3/5 KMB7D1DP30QA Fig7. Transient Thermal Response Curve 1 NORMALIZED EFFECTIVE TRANSIENT THER MAC RESISTANCE 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PDM t1 t2 - Duty = t/T 0.001 10-3 10-2 10-1 100 10 102 300 TIME t (sec) Fig8. Safe Operation Area 100 RDS(ON)LIMIT 100us Drain Current ID (A) 10 1ms 10ms 1 100ms 1s 10s DC VGS= 10V SINGLE PULSE TA= 25 C 0.1 0.01 0.1 1 10 100 Drain - Source Voltage VDS (V) 2007. 4. 17 Revision No : 0 4/5 KMB7D1DP30QA Fig9. Gate Charge Circuit and Wave Form VGS -4.5V ID Schottky Diode 0.5 VDSS 1.0 mA ID VDS Qgs VGS Qgd Qg Q Fig10. Resistive Load Switching RL td(on) VGS ton tr td(off) toff tf 0.5 VDSS 6 VDS -10 V 10% VGS VDS 90% 2007. 4. 17 Revision No : 0 5/5 |
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