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| SEMICONDUCTOR TECHNICAL DATA VOLTAGE REGULATOR, RELAY, RAMP DRIVER, INDUSTRIAL USE FEATURES High Voltage : VCEO=-50V(Min.). High Current : IC(Max.)=-1A. High Transition Frequency : fT=150MHz(Typ.). Wide Area of Safe Operation. Complementary to KTD863. F H C P DEPTH:0.2 KTB764 TRIPLE DIFFUSED PNP TRANSISTOR B D A S Q K DIM A B C D E F G H J K L M N O P Q R S MILLIMETERS 7.20 MAX 5.20 MAX 0.60 MAX 2.50 MAX 1.15 MAX 1.27 1.70 MAX 0.55 MAX _ 14.00 + 0.50 0.35 MIN _ 0.75 + 0.10 4 G J F H M E M L R H MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse ) VCBO VCEO VEBO IC ICP PC Tj Tstg -60 -50 -5 -1 -2 1 150 -55 150 V V V A W O SYMBOL RATING UNIT 1 N 2 3 N H 1. EMITTER 2. COLLECTOR 3. BASE 25 1.25 1.50 0.10 MAX _ 12.50 + 0.50 1.00 TO-92L Collector Power Dissipation Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Note : hFE(1) Classification O:60 120, Y:100 ) TEST CONDITION VCB=-50V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=-50mA VCE=-2V, IC=-1A IC=-1mA, IB=0 IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-10V, IC=-50mA VCB=-10V, IE=0, f=1MHz MIN. 60 30 -50 TYP. -0.2 -0.85 150 20 MAX. -1 -1 320 -0.7 -1.2 V V V MHz pF UNIT A A ICBO IEBO hFE(1) hFE(2) SYMBOL V(BR)CEO VCE(sat) VBE(sat) fT Cob 200, GR:160 320 1999. 11. 30 Revision No : 2 D 1/3 KTB764 I C - VCE COLLECTOR CURRENT I C (mA) -1000 COLLECTOR CURRENT I C (mA) IB =-10mA I C - V CE -1000 -50 mA 30 mA -800 -600 -400 -200 0 0 -2 -4 IB =-6mA IB =-4mA IB =-3mA IB =-2mA I B =-1mA I B =0mA -600 -400 -200 0 IB = IB =-8mA -800 IB =- I B =-20mA I B =-10mA I B =-6mA IB =-4mA IB =-2mA IB =0mA -6 -8 -10 -12 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) h FE - I C 500 300 VCE =-2V COMMON EMITTER Ta=25 C C ob - VCB COLLECTOR OUTPUT CAPACITANCE C ob (pF) 100 50 30 COMMON EMITTER f=1MHz Ta=25 C 1K DC CURRENT GAIN h FE 100 50 30 10 5 3 -1 -3 -5 -10 -30 -50 -100 COLLECTOR-BASE VOLTAGE V CB (V) 10 -1 -3 -10 -30 -100 -300 -1K -5K COLLECTOR CURRENT I C (mA) f T - IC COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) TRANSITION FREQUENCY f T (MHz) 300 COMMON EMITTER Ta=25 C VCE =-10V VCE(sat) - I C -1.0 -0.5 -0.3 COMMON EMITTER Ta=25 C 100 50 30 -0.1 -0.05 -0.03 IC /I B 0 =1 10 -1 -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) -0.01 -1 -3 -10 -30 -100 -300 -1K -5K COLLECTOR CURRENT I C (mA) 1999. 11. 30 Revision No : 2 2/3 KTB764 SAFE OPERATING AREA COLLECTOR CURRENT IC (A) 1PULSE s 1m Pc - Ta COLLECTOR POWER DISSIPATION Pc (mW) -100 1.2k 1k 800 600 400 200 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) -5 -3 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 I CP I C MAX. DC 1s 10 ec ms ec ec OP 10 ER 0m AT c se IO N -0.005 -0.5 -1 -3 -5 -10 -30 -50 COLLECTOR-EMITTER VOLTAGE V CE (V) 1999. 11. 30 Revision No : 2 3/3 |
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