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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors KTC4075 FEATURES Excellent hFE linearity High hFE Low Noise Complementary to KTA2014 TRANSISTOR (NPN) SOT-323 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol VCBO VCEO VEBO IC PD TJ, Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction and Storage Temperature Parameter Value 60 50 5 150 100 -55-125 Units V V V mA mW ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCEsat unless Test otherwise conditions specified) MIN 60 50 5 0.1 0.1 70 700 0.25 80 V MHz MAX UNIT V V V IC = 100A, IE=0 IC = 1mA, IB=0 IE= 100A, IC=0 VCB=60V, IE=0 VEB=5V, IC=0 VCE= 6V, IC=2mA IC=100mA, IB= 10mA VCE=10V, IC= 1mA VCE=10V, IE=0, f=1MHz VCE=6V,IE=0.1mA, f=1KHz,RG=10K A A fT Cob NF 3.5 10 dB dB Noise figure CLASSIFICATION OF hFE Rank Range Marking O 70~140 LO Y 120~240 LY GR 200~400 LGR BL 350~700 LBL Typical Characteristics KTC4075 |
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