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| SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING, WIDE SOA KTC4527 TRIPLE DIFFUSED NPN TRANSISTOR A R S E F D P MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range DC Pulse ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 1100 800 7 3 10 1.5 50 150 -55 150 UNIT V V V A A W H Q T L C C M K M J 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER TO-220AB ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaning Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Output Capacitance Transition Frequency Turn On Time Switching Time Storage Time Fall Time Note : hFE (1) Classification R:15 30, O:20 2001. 4. 9 Revision No : 1 ICBO IEBO ) TEST CONDITION VCB=800V, IE=0 VEB=5V, IC=0 IC=1.5A, IB1=-IB2=0.3A L=2mH, Clamped IC=1.5A, IB=0.3A IC=1.5A, IB=0.3A VCE=5V, IC=0.2A VCE=5V, IC=1A IC=1mA, IE=0 IC=5mA, RBE= IE=1mA, IC=0 VCB=10V, f=1MHz, IE=0 VCE=10V, IC=0.2A OUTPUT 20S IB1 INPUT IB2 I B1 200 I B2 SYMBOL MIN. 800 15 8 1100 800 7 - O 1 2 3 DIM A B C D E F G H J K L M N O P Q R S T MILLIMETERS 10.30 MAX 15.30 MAX 0.80 _ 3.60 + 0.20 3.00 6.70 MAX _ 13.60 + 0.50 5.60 MAX 1.37 MAX 0.50 1.50 MAX 2.54 4.70 MAX 2.60 1.50 MAX 1.50 _ 9.50 + 0.20 _ 8.00 + 0.20 2.90 MAX N G B TYP. 60 15 - MAX. 10 10 2 1.5 40 0.5 3 0.3 UNIT A A V V V VCEX(SUS) VCE(sat) VBE(sat) hFE (1) (Note) hFE (2) BVCBO BVCEO BVEBO Cob fT ton tstg tf 40 V V V pF MHz S I B1 =0.4A , I B2 =-0.8A DUTY CYCLE < 1% = VCC =400V 1/3 KTC4527 I 2.4 COLLECTOR CURRENT I C (A) C - VCE 100 DC CURRENT GAIN h FE 250mA 200mA 150mA 100mA 80mA 60mA 50mA 40mA 30mA 20mA 10mA I B =0mA h FE - I C VCE =5V 2.0 1.6 1.2 0.8 0.4 0 0 1 2 3 4 5 6 7 50 30 10 5 3 8 9 10 1 0.01 0.03 0.1 0.3 1 3 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) VCE(sat) , V BE(sat) - I C COLLECTOR CURRENT I C (A) 5 3 SATURATION VOLTAGE V CE(sat) , VBE(sat) (V) 1 0.5 0.3 0.1 0.05 0.03 0.01 0.01 I C =5I B I C - V BE 3 V CE =5V VBE(sat) 2 VCE(sat) 1 0 0.03 0.1 0.3 1 3 COLLECTOR CURRENT I C (A) 0 0.2 0.4 0.6 0.8 1.0 1.2 BASE EMITTER VOLTAGE V BE (V) SAFE OPERATING AREA SWITCHING CHARACTERISTICS 10 SWITCHING TIME (S) 5 3 1 0.5 0.3 0.1 0.05 0.03 0.1 COLLECTOR CURRENT I C (A) VCC =400V 5.I B1=-2.5. I B 2=I C 20 10 3 1 0.3 0.1 0.03 0.01 0.003 I C MAX(PULSE)* 10 I C MAX(CONTINUOUS) S 0 * S* 1m S* 10m N IO AT ER OP DC t stg t on tf 0.3 0.5 1 3 5 * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 0.001 1 2 5 10 20 50 100 200 500 1K COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) 2001. 4. 9 Revision No : 1 2/3 KTC4527 REVERSE BIAS SAFE OPERATING AREA I B 2=-0.3A Pc - Ta COLLECTOR POWER DISSIPATION Pc (W) 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 AMBIENT TEMPERATIURE Ta ( C) Tc=Ta INFINITE HEAT SINK 100 50 COLLECTOR CURRENT I C (A) 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 10 20 50 100 200 500 1K 2K 5K 10K COLLECTOR EMITTER VOLTAGE VCE (V) 2001. 4. 9 Revision No : 1 3/3 |
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