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| LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors PNP Silicon Surface Mount Transistors With Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-723 package which is designed for low power surface mount applications. LDTA114EM3T5G Series 3 2 1 SOT-723 Simplifies Circuit Design Reduces Board Space Reduces Component Count The SOT-723 Package can be Soldered using Wave or Reflow. Available in 4 mm, 8000 Unit Tape & Reel These are Pb-Free Devices. PIN 1 BASE (INPUT) R1 R2 PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc MARKING DIAGRAM 3 XX M 1 xx M 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance - Junction-to-Ambient Junction and Storage Temperature Range 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad Symbol PD Max 260 (Note 1) 600 (Note 2) 2.0 (Note 1) 4.8 (Note 2) 480 (Note 1) 205 (Note 2) -55 to +150 Unit mW mW/C C/W C = Specific Device Code = Date Code RJA TJ, Tstg Version 1.0 LDTA114EM3T5G_S-1/11 LESHAN RADIO COMPANY, LTD. LDTA114EM3T5G_Series ORDERING INFORMATION, DEVICE MARKING AND RESISTOR VALUES Device LDTA114EM3T5G LDTA124EM3T5G LDTA144EM3T5G LDTA114YM3T5G LDTA114TM3T5G LDTA143TM3T5G LDTA123EM3T5G LDTA143EM3T5G LDTA143ZM3T5G LDTA124XM3T5G LDTA123JM3T5G LDTA115EM3T5G LDTA144WM3T5G Marking 6A 6B 6C 6D 6E 6F 6H 6J 6K 6L 6M 6N 6P R1 (K) 10 22 47 10 10 4.7 2.2 4.7 4.7 22 2.2 100 47 R2 (K) 10 22 47 47 2.2 4.7 47 47 47 100 22 Package Shipping SOT-723 (Pb-Free) 8000/Tape & Reel Version 1.0 LDTA114EM3T5G_S-2/11 LESHAN RADIO COMPANY, LTD. LDTA114EM3T5G_Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) LDTA114EM3T5G LDTA124EM3T5G LDTA144EM3T5G LDTA114YM3T5G LDTA114TM3T5G LDTA143TM3T5G LDTA123EM3T5G LDTA143EM3T5G LDTA143ZM3T5G LDTA124XM3T5G LDTA123JM3T5G LDTA115EM3T5G LDTA144WM3T5G ICBO ICEO IEBO - - - - - - - - - - - - - - - 50 50 - - - - - - - - - - - - - - - - - 100 500 0.5 0.2 0.1 0.2 0.9 1.9 2.3 1.5 0.18 0.13 0.2 0.05 0.13 - - nAdc nAdc mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 3.) (IC = 2.0 mA, IB = 0) V(BR)CBO V(BR)CEO Vdc Vdc ON CHARACTERISTICS (Note 3.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) LDTA114EM3T5G LDTA124EM3T5G LDTA144EM3T5G LDTA114YM3T5G LDTA114TM3T5G LDTA143TM3T5G LDTA123EM3T5G LDTA143EM3T5G LDTA143ZM3T5G LDTA124XM3T5G LDTA123JM3T5G LDTA115EM3T5G LDTA144WM3T5G hFE 35 60 80 80 160 160 8.0 15 80 80 80 80 80 - 60 100 140 140 250 250 15 27 140 130 140 150 140 - - - - - - - - - - - - - - 0.25 Vdc Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) LDTA123EM3T5G (IC = 10 mA, IB = 1 mA) LDTA114TM3T5G/LDTA143TM3T5G/ LDTA143ZM3T5G/LDTA124XM3T5G/LDTA143EM3T5G Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) LDTA114EM3T5G LDTA124EM3T5G LDTA114YM3T5G LDTA114TM3T5G LDTA143TM3T5G LDTA123EM3T5G LDTA143EM3T5G LDTA143ZM3T5G LDTA124XM3T5G LDTA123JM3T5G LDTA144EM3T5G LDTA115EM3T5G LDTA144WM3T5G VCE(sat) VOL - - - - - - - - - - - - - VOH 4.9 - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 - Vdc (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) LDTA114TM3T5G (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) LDTA143TM3T5G LDTA123EM3T5G LDTA143EM3T5G 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% Vdc Version 1.0 LDTA114EM3T5G_S-3/11 LESHAN RADIO COMPANY, LTD. LDTA114EM3T5G_Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Input Resistor LDTA114EM3T5G LDTA124EM3T5G LDTA144EM3T5G LDTA114YM3T5G LDTA114TM3T5G LDTA143TM3T5G LDTA123EM3T5G LDTA143EM3T5G LDTA143ZM3T5G LDTA124XM3T5G LDTA123JM3T5G LDTA115EM3T5G LDTA144WM3T5G Symbol R1 Min 7.0 15.4 32.9 7.0 7.0 3.3 1.5 3.3 3.3 15.4 1.54 70 32.9 0.8 0.17 - 0.8 0.055 0.38 0.038 1.7 Typ 10 22 47 10 10 4.7 2.2 4.7 4.7 22 2.2 100 47 1.0 0.21 - 1.0 0.1 0.47 0.047 2.1 Max 13 28.6 61.1 13 13 6.1 2.9 6.1 6.1 28.6 2.86 130 61.1 1.2 0.25 - 1.2 0.185 0.56 0.056 2.6 Unit kW Resistor Ratio LDTA114EM3T5G/LDTA124EM3T5G/LDTA144EM3T5G / LDTA115EM3T5G LDTA114YM3T5G LDTA114TM3T5G/LDTA143TM3T5G LDTA123EM3T5G/LDTA143EM3T5G LDTA143ZM3T5G LDTA124XM3T5G LDTA123JM3T5G LDTA144WM3T5G 300 250 200 150 100 50 0 -50 RqJA = 480C/W R1/R2 PD , POWER DISSIPATION (MILLIWATTS) 0 50 100 TA, AMBIENT TEMPERATURE (C) 150 Figure 1. Derating Curve Version 1.0 LDTA114EM3T5G_S-4/11 LESHAN RADIO COMPANY, LTD. LDTA114EM3T5G_Series TYPICAL ELECTRICAL CHARACTERISTICS - LDTA114EM3T5G VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = -25C 0.1 75C 25C TA = 75C 100 25C -25C 0.01 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 4 f = 1 MHz lE = 0 V TA = 25C 100 75C 25C TA = -25C Cob , CAPACITANCE (pF) 3 IC, COLLECTOR CURRENT (mA) 10 1 2 0.1 1 0.01 0.001 0 1 2 VO = 5 V 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 10 TA = -25C 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current Version 1.0 LDTA114EM3T5G_S-5/11 LESHAN RADIO COMPANY, LTD. LDTA114EM3T5G_Series TYPICAL ELECTRICAL CHARACTERISTICS - LDTA124EM3T5G VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V 1 TA = -25C 25C TA = 75C 100 25C -25C 75C 0.1 0.01 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 100 75C 10 25C TA = -25C Cob , CAPACITANCE (pF) 3 1 2 0.1 1 0.01 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 VO = 5 V 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = -25C 10 75C 25C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current Version 1.0 LDTA114EM3T5G_S-6/11 LESHAN RADIO COMPANY, LTD. LDTA114EM3T5G_Series TYPICAL ELECTRICAL CHARACTERISTICS - LDTA144EM3T5G VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) TA = 75C 25C 100 -25C TA = -25C 0.1 75C 25C 0.01 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 0.8 Cob , CAPACITANCE (pF) 0.6 0.4 0.2 0 f = 1 MHz lE = 0 V TA = 25C 100 10 1 0.1 0.01 VO = 5 V 0 1 2 TA = 75C 25C -25C 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 IC, COLLECTOR CURRENT (mA) 0.001 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current Version 1.0 LDTA114EM3T5G_S-7/11 LESHAN RADIO COMPANY, LTD. LDTA114EM3T5G_Series TYPICAL ELECTRICAL CHARACTERISTICS - LDTA114YM3T5G VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = -25C 25C 75C 180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 VCE = 10 V 25C -25C TA = 75C 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25C 100 TA = 75C IC, COLLECTOR CURRENT (mA) 25C -25C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 25C TA = -25C +12 V 75C 1 Typical Application for PNP BRTs LOAD 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 0.1 Figure 21. Input Voltage versus Output Current Figure 22. Inexpensive, Unregulated Current Source Version 1.0 LDTA114EM3T5G_S-8/11 LESHAN RADIO COMPANY, LTD. LDTA114EM3T5G_Series TYPICAL ELECTRICAL CHARACTERISTICS -- LDTA115EM3T5G 1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) hFE, DC CURRENT GAIN (NORMALIZED) 1000 75C TA = -25C 25C 100 0.1 -25C 25C 75C 10 IC/IB = 10 0 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7 VCE = 10 V 1 1 10 IC, COLLECTOR CURRENT (mA) 100 0.01 Figure 23. Maximum Collector Voltage versus Collector Current Figure 24. DC Current Gain 1.2 IC, COLLECTOR CURRENT (mA) Cob, CAPACITANCE (pF) 1.0 0.8 0.6 0.4 0.2 0 f = 1 MHz IE = 0 V TA = 25C 100 25C 10 TA = -25C 75C 1 VO = 5 V 0.1 0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 Vin, INPUT VOLTAGE (VOLTS) Figure 25. Output Capacitance Figure 26. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) 25C 10 TA = -25C 1 75C 0 2 VO = 0.2 V 14 16 4 6 8 10 12 IC, COLLECTOR CURRENT (mA) 18 20 Figure 27. Input Voltage versus Output Current Version 1.0 LDTA114EM3T5G_S-9/11 LESHAN RADIO COMPANY, LTD. LDTA114EM3T5G_Series TYPICAL ELECTRICAL CHARACTERISTICS -- LDTA144WM3T5G 1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) hFE, DC CURRENT GAIN (NORMALIZED) 1000 75C TA = -25C 25C TA = -25C 75C 0.1 100 25C IC/IB = 10 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 50 VCE = 10 V 10 1 10 IC, COLLECTOR CURRENT (mA) 100 0.01 Figure 28. Maximum Collector Voltage versus Collector Current Figure 29. DC Current Gain 1.4 Cob, CAPACITANCE (pF) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 100 75C 10 25C TA = -25C 1 0.1 0.01 VO = 5 V 0.001 0 1 2 3 4 5 6 7 8 9 10 11 Vin, INPUT VOLTAGE (VOLTS) Figure 30. Output Capacitance Figure 31. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 10 TA = -25C 75C 1 25C 0 20 5 10 15 IC, COLLECTOR CURRENT (mA) 25 Figure 32. Input Voltage versus Output Current Version 1.0 LDTA114EM3T5G_S-10/11 LESHAN RADIO COMPANY, LTD. LDTA114EM3T5G_Series PACKAGE DIMENSIONS SOT-723 -X- D b1 -Y- 3 A E 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. L C HE e b 2X 0.08 (0.0032) X Y PIN 1. BASE 2. EMITTER 3. COLLECTOR DIM A b b1 C D E e HE L MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.20 0.27 0.25 0.3 0.35 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0079 0.0106 0.010 0.012 0.014 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 SOLDERING FOOTPRINT 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 mm inches Version 1.0 LDTA114EM3T5G_S-11/11 |
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