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LL4154 SURFACE MOUNT FAST SWITCHING DIODE Features * * * Fast Switching Speed Suitable for General Logic Applications High Conductance C B A MiniMELF Dim A B C Min 3.30 1.30 0.28 Max 3.70 1.60 0.50 Mechanical Data * * * * * Case: MiniMELF, Glass Terminals: Solderable per MIL-STD-202, Method 208 Marking: Cathode Band Only Polarity: Cathode Band Weight: 0.05 grams (approx.) All Dimensions in mm Maximum Ratings @ TA = 25C unless otherwise specified Symbol VRM VRRM VRWM VR VR(RMS) IO IFSM Pd RqJA Tj, TSTG LL4154 35 25 18 150 0.5 2.0 500 300 -65 to +175 Unit V V V mA A mW K/W C Characteristic Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) Non-Repetitive Peak Forward Surge Current @ t 1.0s @ t = 1.0ms Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Electrical Characteristics Characteristic Maximum Forward Voltage Drop Maximum Peak Reverse Current Junction Capacitance Reverse Recovery Time @ TA = 25C unless otherwise specified Symbol VFM IRM Cj trr Min 3/4 3/4 3/4 3/4 Max 1.0 100 4.0 4.0 Unit V nA mA pF ns Test Condition IF = 30mA VR = 25V VR = 25V, Tj = 150C VR = 0V, f = 1.0MHz IF = IR = 10mA, Irr = 0.1 x IR, RL = 100W Note: 1. Valid provided that electrodes are kept at ambient temperature. DS30071 Rev. A-2 1 of 2 LL4154 500 1000 Pd, POWER DISSIPATION (mW) IF, FORWARD CURRENT (mA) 400 100 300 10 Tj = 100C Tj = 25C 200 1.0 100 0.1 0 0 100 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Derating Curve 200 0.01 0 1 VF, FORWARD VOLTAGE (V) Fig. 2 Forward Characteristics 2 1.1 Tj = 25C f = 1.0MHz 10,000 RELATIVE CAPACITANCE RATIO [CTOT(VR)/CTOT(0V)] IR, LEAKAGE CURRENT (nA) 1.0 1,000 0.9 100 0.8 10 0.7 0 2 4 6 8 10 VR = 25V 1 0 100 200 Tj, JUNCTION TEMPERATURE (C) Fig. 4 Leakage Current vs Junction Temperature VR, REVERSE VOLTAGE (V) Fig. 3 Relative Capacitance Variation DS30071 Rev. A-2 2 of 2 LL4154 |
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