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| Infrared Light Emitting Diodes LNA2606L GaAlAs on GaAs Infrared Light Emitting Diode Unit: mm 0.8 max. For optical control systems s Features * High-power output, high-efficiency: PO = 9 mW min. * Emitted light spectrum suited for silicon photodetectors * Ultra-miniature, thin side-view type package * Long lifetime, high reliability 1.950.25 3.00.3 0.8 1.1 R0.5 1.40.2 0.9 0.5 3.50.3 12 min. 2.4 1.1 Not soldered 2.15 max. 1.1 2- 0.50.15 0.30.15 s Absolute Maximum Ratings Ta = 25C Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * 2 1 2.54 Symbol PD IF IFP VR Topr Tstg Ratings 80 50 1 3 -25 to +85 -40 to +100 Unit mW mA A V C C 1: Anode 2: Cathode Note) *: f = 100 Hz, Duty Cycle = 0.1% s Electro-Optical Characteristics Ta = 25C Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Symbol PO P VF IR Ct IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA VR = 3 V VR = 0 V, f = 1 MHz The angle in which radiant intencity is 50% 35 20 Conditions min 9 940 50 1.3 1.6 10 typ max 19 Unit mW nm nm V A pF 1 |
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