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| Schottky Barrier Diodes (SBD) MA2C723 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification I Features * Allowing to rectify under (IF(AV) = 200 mA) condition * Sealed in DO-34 (DHD) package * Allowing high-density mounting (5 mm pitch insertion) * High reliability 0.45 max. COLORED BAND INDICATES CATHODE 1 0.2 max. 0.2 max. I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Non-repetitive peak forward surge current* Peak forward current Forward current (DC) Junction temperature Storage temperature Symbol VR IFSM IFM IF(AV) Tj Tstg Rating 30 1.5 300 200 150 -55 to +150 Unit V A mA mA C C 2 1.75 max. 1 : Casthode 2 : Anode JEDEC : DO-34 Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 30 V IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 30 3.0 Conditions Min Typ Max 50 0.55 Unit A V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 1 000 MHz I Cathode Indication 3. * : trr measuring instrument Color band in pink Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 13 min. 2.2 0.3 13 min. 1 MA2C723 IF V F 103 75C 25C 102 0.5 0.6 Schottky Barrier Diodes (SBD) VF Ta 104 IR VR Ta = 125C Forward current IF (mA) - 20C Forward voltage VF (V) 0.4 100 mA 0.3 Reverse current IR (A) Ta = 125C 10 IF = 200 mA 103 102 75C 1 10 25C 1 0.2 10-1 0.1 1 mA 10-2 0 0.2 0.4 0.6 0.8 0 -40 10-1 0 40 80 120 160 200 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) Ct VR 40 f = 1 MHz Ta = 25C 104 IR T a Terminal capacitance Ct (pF) 103 VR = 30 V 15 V 5V Reverse current IR (A) 0 5 10 15 20 25 30 30 102 20 10 10 1 0 10-1 -40 0 40 80 120 160 200 Reverse voltage VR (V) Ambient temperature Ta (C) 2 |
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