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Schottky Barrier Diodes (SBD) MA3D755 Silicon epitaxial planar type (cathode common) Unit : mm For switching power supply 15.0 0.5 9.9 0.3 3.0 0.5 4.6 0.2 2.9 0.2 I Features * Low forward rise voltage VF * TO-220D (Full-pack package) with high dielectric breakdown voltage > 5.0 kV * Easy-to-mount, caused by its V cut lead end 3.2 0.1 13.7 0.2 4.2 0.2 1.4 0.2 1.6 0.2 0.8 0.1 2.54 0.3 3 5.08 0.5 2.6 0.1 0.55 0.15 I Absolute Maximum Ratings Ta = 25C 1 2 Parameter Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VRRM IF(AV) IFSM Tj Tstg Rating 60 5 90 -40 to +125 -40 to +125 Unit V A A C C 1 : Anode 2 : Cathode 3 : Anode TO-220D Package Internal Connection Note) * : Half sine-wave; 10 ms/cycle 1 2 3 I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Thermal resistance Symbol IR VF Rth(j-c) VR = 60 V IF = 2.5 A Direct current (between junction and case) Conditions Min Typ Max 1 0.58 3 Unit mA V C/W Note) Rated input/output frequency: 200 MHz 1 MA3D755 IF V F 10 Ta = 125C 1 75C 25C -20C Schottky Barrier Diodes (SBD) VF Ta 0.8 0.7 10 102 IR VR Forward voltage VF (V) Forward current IF (A) 0.6 0.5 IF = 2.5 A 0.4 0.3 0.2 100 mA 0.1 1A 10-1 Reverse current IR (mA) Ta = 125C 1 75C 10-2 10-1 25C 10-2 10-3 10-4 0 0.2 0.4 0.6 0.8 1.0 1.2 0 -40 10-3 0 40 80 120 160 200 0 10 20 30 40 50 60 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) IR T a 102 VR = 60 V 700 800 Ct VR Average forward power PD(AV) (W) f = 1 MHz Ta = 25C 20 PD(AV) IF(AV) t0 t1 15 10 Reverse current IR (mA) 30 V 10 V Terminal capacitance Ct (pF) 600 500 400 300 200 100 1 10 10-1 t0 / t1 = 1/6 5 1/3 1/2 DC 10-2 10-3 -40 0 40 80 120 160 200 0 0 10 20 30 40 50 60 0 0 1 2 3 4 5 6 Ambient temperature Ta (C) Reverse voltage VR (V) Average forward current IF(AV) (A) IF(AV) TC 8 Average forward current IF(AV) (A) 7 6 5 4 3 2 1 0 20 t0 / t1 = 1/2 1/3 1/6 t0 t1 DC 40 60 80 100 120 140 Case temperature TC (C) 2 |
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