 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MBRM760 7A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWERMITEO3 Features UNDER DEVELOPMENT POWERMITEa3 Dim Min 4.03 6.40 Max 4.09 6.61 NEW PRODUCT * * * * * * Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability Low Reverse Current For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Plastic Material: UL Flammability Classification Rating 94V-0 1 A P 3 E G A B C .889 NOM 1.83 NOM 1.10 5.01 4.37 .71 .36 1.73 1.14 5.17 4.43 .77 .46 1.83 .178 NOM B 2 J H D E G Mechanical Data * * * * * * Case: POWERMITEa3, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Moisture sensitivity: Level 1 per J-STD-020A Polarity: See Diagram Marking: Type Number Weight: 0.072 grams (approx.) M D C PIN 1 PIN 2 H J K C L PIN 3, BOTTOMSIDE HEAT SINK K L M P .178 NOM Note: Pins 1 & 2 must be electrically connected at the printed circuit board. All Dimensions in mm Maximum Ratings @ TA = 25C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (See also figure 4) Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) @ TC = 55C Typical Thermal Resistance Junction to Soldering Point Operating Temperature Range Storage Temperature Range Symbol VRRM VRWM VR VR(RMS) IO IFSM RqJS Tj TSTG @ TA = 25C unless otherwise specified Symbol V(BR)R VF Min 60 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ 3/4 0.49 0.38 0.57 0.46 5 10 375 Max 3/4 0.52 3/4 0.60 3/4 200 20 3/4 Unit V V mA mA pF Test Condition IR = 0.5mA IF = 3.5A, Tj = 25C IF = 3.5A, Tj = 125C IF = 7A, Tj = 25C IF = 7A, Tj = 125C Tj = 25C, VR = 60V Tj = 125C, VR = 60V f = 1.0MHz, VR = 4.0V DC Value 60 42 7 100 2.5 -65 to +125 -65 to +150 Unit V V A A C/W C C Electrical Characteristics Characteristic Reverse Breakdown Voltage (Note 1) Forward Voltage (Note 1) Reverse Current (Note 1) Total Capacitance Notes: IR CT 1. Short duration test pulse used to minimize self-heating effect. DS30357 Rev. 2 - 1 1 of 3 www.diodes.com MBRM760 IR, INSTANTANEOUS FORWARD CURRENT (A) IR, INSTANTANEOUS REVERSE CURRENT (A) 100 100m NEW PRODUCT 10m Tj = 125C 10 Tj = 125C 1m Tj = 100C 1 Tj = 25C Tj = 100C 0.1 Tj = 25C 0.01 0 200 400 600 800 0 10 20 30 40 50 60 VF, INSTANTANEOUS FORWARD VOLTAGE (mV) Fig. 1 Typical Forward Characteristics VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 2 Typical Reverse Characteristics 10,000 f = 1MHz Ct, TOTAL CAPACITANCE (pF) 1000 100 0 15 30 45 60 VR, REVERSE VOLTAGE (V) Fig. 3 Typical Capacitance vs. Reverse Voltage UNDER DEVELOPMENT DS30357 Rev. 2 - 1 2 of 3 www.diodes.com MBRM760 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 10.0 4 Note 2 3.5 3 2.5 2 1.5 1 0.5 0 0 5 8 7 9 10 3 4 6 1 2 IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 6 Forward Power Dissipation Note 3 Tj = 125C NEW PRODUCT IF, DC FORWARD CURRENT (A) 8.0 Note 1 6.0 Note 2 4.0 Note 3 2.0 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 4 DC Forward Current Derating Notes: 1. TA = TSOLDERING POINT, RqJS = 2.5C/W, RqSA = 0C/W. 2. Device mounted on GETEK substrate, 2"x2", 2 oz. copper, double-sided, cathode pad dimensions 0.75" x 1.0", anode pad dimensions 0.25" x 1.0". RqJA in range of 20-35C/W. 3. Device mounted on FR-4 substrate, 2"x2", 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of 75-100C/W. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. (Note 4) Packaging POWERMITEa3 Shipping 5000/Tape & Reel Ordering Information Device MBRM760-13 Marking Information MBRM760 YYWW(K) MBRM760 = Product type marking code = Manufacturers' code marking YYWW = Date code marking YY = Last digit of year ex: 2 for 2002 WW = Week code 01 to 52 (K) = Factory Designator UNDER DEVELOPMENT POWERMITE is a registered trademark of Microsemi Corporation. DS30357 Rev. 2 - 1 3 of 3 www.diodes.com MBRM760 |
Price & Availability of MBRM760-13
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |